KR100386137B1 - 에틸렌디아민사초산 또는 그의 암모늄염 반도체 공정 잔류물 제거 조성물 및 방법 - Google Patents

에틸렌디아민사초산 또는 그의 암모늄염 반도체 공정 잔류물 제거 조성물 및 방법 Download PDF

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KR100386137B1
KR100386137B1 KR19997009102A KR19997009102A KR100386137B1 KR 100386137 B1 KR100386137 B1 KR 100386137B1 KR 19997009102 A KR19997009102 A KR 19997009102A KR 19997009102 A KR19997009102 A KR 19997009102A KR 100386137 B1 KR100386137 B1 KR 100386137B1
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substrate
composition
residue
titanium
acid
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Korean (ko)
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KR20010006024A (ko
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와이 문 리
제페이 제씨 첸
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이케이씨 테크놀로지, 인코포레이티드
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
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    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/26—Organic compounds containing oxygen
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/04—Cleaning involving contact with liquid
    • B08B3/08—Cleaning involving contact with liquid the liquid having chemical or dissolving effect
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    • C09D9/00—Chemical paint or ink removers
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    • C11D3/20—Organic compounds containing oxygen
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    • C11D3/2041—Dihydric alcohols
    • C11D3/2058—Dihydric alcohols aromatic
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    • C11D3/2075—Carboxylic acids-salts thereof
    • C11D3/2086—Hydroxy carboxylic acids-salts thereof
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    • C11D3/30—Amines; Substituted amines ; Quaternized amines
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    • C11D3/3427—Organic compounds containing sulfur containing thiol, mercapto or sulfide groups, e.g. thioethers or mercaptales
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    • C11D3/34—Organic compounds containing sulfur
    • C11D3/3472—Organic compounds containing sulfur additionally containing -COOH groups or derivatives thereof
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    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
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    • G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
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  • Metallurgy (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Detergent Compositions (AREA)
  • Cleaning By Liquid Or Steam (AREA)
  • Drying Of Semiconductors (AREA)
  • Weting (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
KR19997009102A 1997-04-04 1998-03-17 에틸렌디아민사초산 또는 그의 암모늄염 반도체 공정 잔류물 제거 조성물 및 방법 Expired - Fee Related KR100386137B1 (ko)

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US08/833,382 US6492311B2 (en) 1990-11-05 1997-04-04 Ethyenediaminetetraacetic acid or its ammonium salt semiconductor process residue removal composition and process
US8/833,382 1997-04-04
PCT/US1998/005150 WO1998045399A1 (en) 1997-04-04 1998-03-17 Ethylenediaminetetraacetic acid or its ammonium salt semiconductor process residue removal composition and process

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WO1998045399A1 (en) 1998-10-15
EP0975731A4 (en) 2001-02-07
US6367486B1 (en) 2002-04-09
JP2001526836A (ja) 2001-12-18
TW416984B (en) 2001-01-01
JP4138891B2 (ja) 2008-08-27
EP0975731B1 (en) 2006-09-20
US20010006936A1 (en) 2001-07-05
DE69835951D1 (de) 2006-11-02
US6492311B2 (en) 2002-12-10
DE69835951T2 (de) 2007-06-14
EP0975731A1 (en) 2000-02-02
SG120055A1 (en) 2006-03-28
ATE340243T1 (de) 2006-10-15
KR20010006024A (ko) 2001-01-15

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