KR100348774B1 - 플래시형코어를갖는소거/기록가능롬어레이 - Google Patents

플래시형코어를갖는소거/기록가능롬어레이 Download PDF

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Publication number
KR100348774B1
KR100348774B1 KR1019960705804A KR19960705804A KR100348774B1 KR 100348774 B1 KR100348774 B1 KR 100348774B1 KR 1019960705804 A KR1019960705804 A KR 1019960705804A KR 19960705804 A KR19960705804 A KR 19960705804A KR 100348774 B1 KR100348774 B1 KR 100348774B1
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KR
South Korea
Prior art keywords
memory
data
eeprom
byte
sector
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Expired - Fee Related
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KR1019960705804A
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English (en)
Korean (ko)
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KR970702561A (ko
Inventor
람브라체 에밀
스마란도이우 조지
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아트멜 코포레이숀
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Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C14/00—Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F11/00—Error detection; Error correction; Monitoring
    • G06F11/07—Responding to the occurrence of a fault, e.g. fault tolerance
    • G06F11/08—Error detection or correction by redundancy in data representation, e.g. by using checking codes
    • G06F11/10—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's
    • G06F11/1008—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's in individual solid state devices
    • G06F11/1068—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's in individual solid state devices in sector programmable memories, e.g. flash disk
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F12/00—Accessing, addressing or allocating within memory systems or architectures
    • G06F12/02—Addressing or allocation; Relocation
    • G06F12/08—Addressing or allocation; Relocation in hierarchically structured memory systems, e.g. virtual memory systems
    • G06F12/0802—Addressing of a memory level in which the access to the desired data or data block requires associative addressing means, e.g. caches
    • G06F12/0893—Caches characterised by their organisation or structure
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/14—Circuits for erasing electrically, e.g. erase voltage switching circuits
    • G11C16/16—Circuits for erasing electrically, e.g. erase voltage switching circuits for erasing blocks, e.g. arrays, words, groups
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/26—Sensing or reading circuits; Data output circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3418—Disturbance prevention or evaluation; Refreshing of disturbed memory data
    • G11C16/3431—Circuits or methods to detect disturbed nonvolatile memory cells, e.g. which still read as programmed but with threshold less than the program verify threshold or read as erased but with threshold greater than the erase verify threshold, and to reverse the disturbance via a refreshing programming or erasing step
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F11/00—Error detection; Error correction; Monitoring
    • G06F11/07—Responding to the occurrence of a fault, e.g. fault tolerance
    • G06F11/08—Error detection or correction by redundancy in data representation, e.g. by using checking codes
    • G06F11/10—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's
    • G06F11/1008—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's in individual solid state devices
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F2212/00—Indexing scheme relating to accessing, addressing or allocation within memory systems or architectures
    • G06F2212/20—Employing a main memory using a specific memory technology
    • G06F2212/202—Non-volatile memory
    • G06F2212/2022—Flash memory

Landscapes

  • Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Quality & Reliability (AREA)
  • Read Only Memory (AREA)
  • Memory System Of A Hierarchy Structure (AREA)
  • Techniques For Improving Reliability Of Storages (AREA)
  • For Increasing The Reliability Of Semiconductor Memories (AREA)
KR1019960705804A 1995-03-17 1996-02-22 플래시형코어를갖는소거/기록가능롬어레이 Expired - Fee Related KR100348774B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/405,884 US5606532A (en) 1995-03-17 1995-03-17 EEPROM array with flash-like core
US08/405,884 1995-03-17

Publications (2)

Publication Number Publication Date
KR970702561A KR970702561A (ko) 1997-05-13
KR100348774B1 true KR100348774B1 (ko) 2003-01-24

Family

ID=23605633

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019960705804A Expired - Fee Related KR100348774B1 (ko) 1995-03-17 1996-02-22 플래시형코어를갖는소거/기록가능롬어레이

Country Status (8)

Country Link
US (2) US5606532A (enExample)
EP (2) EP0764330B1 (enExample)
JP (1) JPH10500801A (enExample)
KR (1) KR100348774B1 (enExample)
CN (2) CN1110053C (enExample)
DE (2) DE69630624T2 (enExample)
TW (1) TW309616B (enExample)
WO (1) WO1996029704A1 (enExample)

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DE69630624D1 (de) 2003-12-11
WO1996029704A1 (en) 1996-09-26
DE69621201T2 (de) 2002-12-19
EP1158533B1 (en) 2003-11-05
TW309616B (enExample) 1997-07-01
KR970702561A (ko) 1997-05-13
CN100483548C (zh) 2009-04-29
US5765185A (en) 1998-06-09
JPH10500801A (ja) 1998-01-20
CN1607609A (zh) 2005-04-20
US5606532A (en) 1997-02-25
DE69621201D1 (de) 2002-06-20
CN1145684A (zh) 1997-03-19
EP1158533A1 (en) 2001-11-28
EP0764330B1 (en) 2002-05-15
EP0764330A4 (en) 2000-07-19
DE69630624T2 (de) 2004-07-29
CN1110053C (zh) 2003-05-28

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