KR100323997B1 - 발광다이오드및그제조방법 - Google Patents

발광다이오드및그제조방법 Download PDF

Info

Publication number
KR100323997B1
KR100323997B1 KR1019940015633A KR19940015633A KR100323997B1 KR 100323997 B1 KR100323997 B1 KR 100323997B1 KR 1019940015633 A KR1019940015633 A KR 1019940015633A KR 19940015633 A KR19940015633 A KR 19940015633A KR 100323997 B1 KR100323997 B1 KR 100323997B1
Authority
KR
South Korea
Prior art keywords
layer
substrate
light emitting
epitaxial
convex
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1019940015633A
Other languages
English (en)
Korean (ko)
Other versions
KR950002088A (ko
Inventor
우노쯔네히로
고노다이찌로
Original Assignee
하시모또 히로시
히다찌전선 가부시끼가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 하시모또 히로시, 히다찌전선 가부시끼가이샤 filed Critical 하시모또 히로시
Publication of KR950002088A publication Critical patent/KR950002088A/ko
Application granted granted Critical
Publication of KR100323997B1 publication Critical patent/KR100323997B1/ko
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H10H20/82—Roughened surfaces, e.g. at the interface between epitaxial layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/814—Bodies having reflecting means, e.g. semiconductor Bragg reflectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/855—Optical field-shaping means, e.g. lenses

Landscapes

  • Led Devices (AREA)
KR1019940015633A 1993-06-30 1994-06-30 발광다이오드및그제조방법 Expired - Fee Related KR100323997B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP16061093 1993-06-30
JP93-160610 1993-06-30
JP93-287987 1993-11-17
JP28798793 1993-11-17

Publications (2)

Publication Number Publication Date
KR950002088A KR950002088A (ko) 1995-01-04
KR100323997B1 true KR100323997B1 (ko) 2002-06-20

Family

ID=26487062

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019940015633A Expired - Fee Related KR100323997B1 (ko) 1993-06-30 1994-06-30 발광다이오드및그제조방법

Country Status (4)

Country Link
US (1) US5491350A (enExample)
KR (1) KR100323997B1 (enExample)
CN (1) CN1054470C (enExample)
TW (1) TW253999B (enExample)

Families Citing this family (85)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6590502B1 (en) 1992-10-12 2003-07-08 911Ep, Inc. Led warning signal light and movable support
US6043509A (en) * 1996-12-13 2000-03-28 Hitachi Cable, Ltd. Light-emitting diode having moisture-proof characteristics and high output power
GB2330679B (en) 1997-10-21 2002-04-24 911 Emergency Products Inc Warning signal light
US6091085A (en) * 1998-02-19 2000-07-18 Agilent Technologies, Inc. GaN LEDs with improved output coupling efficiency
US6462669B1 (en) 1999-04-06 2002-10-08 E. P . Survivors Llc Replaceable LED modules
US6614359B2 (en) * 1999-04-06 2003-09-02 911 Emergency Products, Inc. Replacement led lamp assembly and modulated power intensity for light source
US6380865B1 (en) 1999-04-06 2002-04-30 911 Emergency Products, Inc. Replacement led lamp assembly and modulated power intensity for light source
US6705745B1 (en) * 1999-06-08 2004-03-16 911Ep, Inc. Rotational led reflector
WO2000074973A1 (en) 1999-06-08 2000-12-14 911 Emergency Products, Inc. Rotational led reflector
US6700502B1 (en) * 1999-06-08 2004-03-02 911Ep, Inc. Strip LED light assembly for motor vehicle
US6547410B1 (en) 2000-07-28 2003-04-15 911 Emergency Products, Inc. LED alley/take-down light
US20050047167A1 (en) * 1999-08-04 2005-03-03 Pederson John C. Warning signal light bar
US20050057941A1 (en) * 1999-08-04 2005-03-17 911Ep, Inc. 360 Degree pod warning light signal
US6367949B1 (en) 1999-08-04 2002-04-09 911 Emergency Products, Inc. Par 36 LED utility lamp
AU4139101A (en) 1999-12-03 2001-06-12 Cree Lighting Company Enhanced light extraction in leds through the use of internal and external optical elements
US6590343B2 (en) 2000-06-06 2003-07-08 911Ep, Inc. LED compensation circuit
DE10032531A1 (de) * 2000-07-05 2002-01-24 Osram Opto Semiconductors Gmbh Lumineszenzdiode
US20020017652A1 (en) * 2000-08-08 2002-02-14 Stefan Illek Semiconductor chip for optoelectronics
US7547921B2 (en) * 2000-08-08 2009-06-16 Osram Opto Semiconductors Gmbh Semiconductor chip for optoelectronics
US7439847B2 (en) 2002-08-23 2008-10-21 John C. Pederson Intelligent observation and identification database system
US6879263B2 (en) * 2000-11-15 2005-04-12 Federal Law Enforcement, Inc. LED warning light and communication system
US8188878B2 (en) 2000-11-15 2012-05-29 Federal Law Enforcement Development Services, Inc. LED light communication system
JP4055503B2 (ja) 2001-07-24 2008-03-05 日亜化学工業株式会社 半導体発光素子
US6903379B2 (en) * 2001-11-16 2005-06-07 Gelcore Llc GaN based LED lighting extraction efficiency using digital diffractive phase grating
JP4080843B2 (ja) * 2002-10-30 2008-04-23 株式会社東芝 不揮発性半導体記憶装置
US7071494B2 (en) * 2002-12-11 2006-07-04 Lumileds Lighting U.S. Llc Light emitting device with enhanced optical scattering
US7211831B2 (en) * 2003-04-15 2007-05-01 Luminus Devices, Inc. Light emitting device with patterned surfaces
US20040259279A1 (en) 2003-04-15 2004-12-23 Erchak Alexei A. Light emitting device methods
US7083993B2 (en) * 2003-04-15 2006-08-01 Luminus Devices, Inc. Methods of making multi-layer light emitting devices
US7105861B2 (en) * 2003-04-15 2006-09-12 Luminus Devices, Inc. Electronic device contact structures
US7074631B2 (en) * 2003-04-15 2006-07-11 Luminus Devices, Inc. Light emitting device methods
US7166871B2 (en) * 2003-04-15 2007-01-23 Luminus Devices, Inc. Light emitting systems
US7521854B2 (en) * 2003-04-15 2009-04-21 Luminus Devices, Inc. Patterned light emitting devices and extraction efficiencies related to the same
US7084434B2 (en) * 2003-04-15 2006-08-01 Luminus Devices, Inc. Uniform color phosphor-coated light-emitting diode
US6831302B2 (en) * 2003-04-15 2004-12-14 Luminus Devices, Inc. Light emitting devices with improved extraction efficiency
US7098589B2 (en) 2003-04-15 2006-08-29 Luminus Devices, Inc. Light emitting devices with high light collimation
US7262550B2 (en) * 2003-04-15 2007-08-28 Luminus Devices, Inc. Light emitting diode utilizing a physical pattern
US7274043B2 (en) * 2003-04-15 2007-09-25 Luminus Devices, Inc. Light emitting diode systems
US7667238B2 (en) * 2003-04-15 2010-02-23 Luminus Devices, Inc. Light emitting devices for liquid crystal displays
WO2005018008A1 (ja) * 2003-08-19 2005-02-24 Nichia Corporation 半導体素子
US7344903B2 (en) * 2003-09-17 2008-03-18 Luminus Devices, Inc. Light emitting device processes
US7341880B2 (en) * 2003-09-17 2008-03-11 Luminus Devices, Inc. Light emitting device processes
US7450311B2 (en) * 2003-12-12 2008-11-11 Luminus Devices, Inc. Optical display systems and methods
CN101120433B (zh) 2004-06-04 2010-12-08 伊利诺伊大学评议会 用于制造并组装可印刷半导体元件的方法
US7521292B2 (en) 2004-06-04 2009-04-21 The Board Of Trustees Of The University Of Illinois Stretchable form of single crystal silicon for high performance electronics on rubber substrates
US20090023239A1 (en) * 2004-07-22 2009-01-22 Luminus Devices, Inc. Light emitting device processes
US20060038188A1 (en) 2004-08-20 2006-02-23 Erchak Alexei A Light emitting diode systems
JP4250576B2 (ja) * 2004-08-24 2009-04-08 株式会社東芝 半導体発光素子
KR100590775B1 (ko) * 2004-12-08 2006-06-19 한국전자통신연구원 실리콘 발광 소자
EP1820222A1 (en) * 2004-12-08 2007-08-22 Electronics and Telecommunications Research Institute Silicon-based light emitting diode
JP4273237B2 (ja) * 2005-01-05 2009-06-03 Ｄｏｗａホールディングス株式会社 赤外発光ダイオード及びその製造方法
FI118196B (fi) * 2005-07-01 2007-08-15 Optogan Oy Puolijohderakenne ja puolijohderakenteen valmistusmenetelmä
US7170100B2 (en) 2005-01-21 2007-01-30 Luminus Devices, Inc. Packaging designs for LEDs
US7692207B2 (en) * 2005-01-21 2010-04-06 Luminus Devices, Inc. Packaging designs for LEDs
US20060204865A1 (en) * 2005-03-08 2006-09-14 Luminus Devices, Inc. Patterned light-emitting devices
US20070045640A1 (en) * 2005-08-23 2007-03-01 Erchak Alexei A Light emitting devices for liquid crystal displays
US20080099777A1 (en) * 2005-10-19 2008-05-01 Luminus Devices, Inc. Light-emitting devices and related systems
JP2008091179A (ja) * 2006-09-29 2008-04-17 Yamaha Motor Co Ltd ヘッドライト装置及び車両
US8110838B2 (en) * 2006-12-08 2012-02-07 Luminus Devices, Inc. Spatial localization of light-generating portions in LEDs
US8053789B2 (en) 2006-12-28 2011-11-08 Seoul Opto Device Co., Ltd. Light emitting device and fabrication method thereof
US8110425B2 (en) * 2007-03-20 2012-02-07 Luminus Devices, Inc. Laser liftoff structure and related methods
US7781779B2 (en) * 2007-05-08 2010-08-24 Luminus Devices, Inc. Light emitting devices including wavelength converting material
US9258864B2 (en) 2007-05-24 2016-02-09 Federal Law Enforcement Development Services, Inc. LED light control and management system
US9455783B2 (en) 2013-05-06 2016-09-27 Federal Law Enforcement Development Services, Inc. Network security and variable pulse wave form with continuous communication
WO2008148022A2 (en) 2007-05-24 2008-12-04 Federal Law Enforcement Development Services, Inc. Building illumination apparatus with integrated communications, security and energy management
US9414458B2 (en) 2007-05-24 2016-08-09 Federal Law Enforcement Development Services, Inc. LED light control assembly and system
US11265082B2 (en) 2007-05-24 2022-03-01 Federal Law Enforcement Development Services, Inc. LED light control assembly and system
US9100124B2 (en) 2007-05-24 2015-08-04 Federal Law Enforcement Development Services, Inc. LED Light Fixture
US9294198B2 (en) 2007-05-24 2016-03-22 Federal Law Enforcement Development Services, Inc. Pulsed light communication key
TW200929593A (en) * 2007-12-20 2009-07-01 Nat Univ Tsing Hua Light source with reflective pattern structure
RU2381604C1 (ru) * 2008-07-08 2010-02-10 Общество с ограниченной ответственностью ООО "Юник Ай Сиз" СПОСОБ ИЗГОТОВЛЕНИЯ ТОНКОПЛЕНОЧНОГО ПОЛУПРОВОДНИКОВОГО ЛАЗЕРА НА ОСНОВЕ ТОНКОЙ МНОГОПРОХОДНОЙ ИЗЛУЧАЮЩЕЙ p-n-ГЕТЕРОСТРУКТУРЫ
KR101009651B1 (ko) * 2008-10-15 2011-01-19 박은현 3족 질화물 반도체 발광소자
KR100992728B1 (ko) * 2008-10-20 2010-11-05 엘지이노텍 주식회사 발광 소자 및 그 제조방법
US8890773B1 (en) 2009-04-01 2014-11-18 Federal Law Enforcement Development Services, Inc. Visible light transceiver glasses
KR101154596B1 (ko) * 2009-05-21 2012-06-08 엘지이노텍 주식회사 반도체 발광소자 및 그 제조방법
EP2315269A1 (en) * 2009-10-23 2011-04-27 Nxp B.V. Light emitting diode
US9070851B2 (en) 2010-09-24 2015-06-30 Seoul Semiconductor Co., Ltd. Wafer-level light emitting diode package and method of fabricating the same
KR20120040448A (ko) * 2010-10-19 2012-04-27 삼성엘이디 주식회사 수직형 발광 소자
EP2663969B1 (en) 2011-01-14 2020-04-15 Federal Law Enforcement Development Services, Inc. Method of providing lumens and tracking of lumen consumption
US9265112B2 (en) 2013-03-13 2016-02-16 Federal Law Enforcement Development Services, Inc. LED light control and management system
JPWO2015033638A1 (ja) 2013-09-03 2017-03-02 シャープ株式会社 半導体発光素子
US20150198941A1 (en) 2014-01-15 2015-07-16 John C. Pederson Cyber Life Electronic Networking and Commerce Operating Exchange
US20170048953A1 (en) 2015-08-11 2017-02-16 Federal Law Enforcement Development Services, Inc. Programmable switch and system
CN205944139U (zh) 2016-03-30 2017-02-08 首尔伟傲世有限公司 紫外线发光二极管封装件以及包含此的发光二极管模块
CN112002787B (zh) * 2020-10-30 2021-03-02 南昌凯捷半导体科技有限公司 一种具有粗糙表面的红外led外延片制备方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03174779A (ja) * 1989-09-22 1991-07-29 Hitachi Cable Ltd 発光ダイオード
JPH04280481A (ja) * 1991-03-08 1992-10-06 Hitachi Cable Ltd 発光ダイオード

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5932073B2 (ja) * 1979-06-01 1984-08-06 三菱電機株式会社 発光ダイオ−ドおよびその製造方法
JPS62173773A (ja) * 1986-01-27 1987-07-30 Sharp Corp 発光ダイオ−ド
JPH0770757B2 (ja) * 1989-10-17 1995-07-31 株式会社東芝 半導体発光素子
JP2661460B2 (ja) * 1992-05-19 1997-10-08 日立電線株式会社 発光ダイオードの製造方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03174779A (ja) * 1989-09-22 1991-07-29 Hitachi Cable Ltd 発光ダイオード
JPH04280481A (ja) * 1991-03-08 1992-10-06 Hitachi Cable Ltd 発光ダイオード

Also Published As

Publication number Publication date
KR950002088A (ko) 1995-01-04
CN1103512A (zh) 1995-06-07
CN1054470C (zh) 2000-07-12
TW253999B (enExample) 1995-08-11
US5491350A (en) 1996-02-13

Similar Documents

Publication Publication Date Title
KR100323997B1 (ko) 발광다이오드및그제조방법
US6080599A (en) Semiconductor optoelectric device and method of manufacturing the same
JP2953468B2 (ja) 化合物半導体装置及びその表面処理加工方法
JP3724620B2 (ja) 発光ダイオードの製造方法
CA1093197A (en) Lateral current confinement in junction light emitting diodes especially lasers
KR100638730B1 (ko) 수직구조 3족 질화물 발광 소자의 제조 방법
JPH11307870A (ja) 半導体装置およびその製造方法
JP2008047871A (ja) 半導体発光ダイオード
KR940005764B1 (ko) 레이저 다이오드 어레이 및 그 제조방법
JP3158869B2 (ja) 発光ダイオード及びその製造方法
EP1345276B1 (en) Semiconductor light emitting device
JP2765256B2 (ja) 発光ダイオード
JP3257286B2 (ja) 発光ダイオードの製造方法
US4946801A (en) Epitaxial wafer
JPH1116852A (ja) ３−５族化合物半導体用電極の製造方法と３−５族化合物半導体素子
US20120068196A1 (en) Semiconductor light-emitting device and a method of manufacture thereof
JP3956422B2 (ja) ３−５族化合物半導体チップの製造方法
JP3410166B2 (ja) 赤色発光ダイオード素子
KR102043601B1 (ko) 발광 소자의 제조 방법
EP0095895A2 (en) Semiconductor laser
JPH10107314A (ja) 半導体装置及びその製造方法
KR100234001B1 (ko) 양자세선 레이저 다이오드 제작방법
JPH07235690A (ja) 発光ダイオード及びその製造方法
JP2003133584A (ja) 半導体発光素子
KR20040013394A (ko) 발광 다이오드 및 그 제조방법

Legal Events

Date Code Title Description
PA0109 Patent application

St.27 status event code: A-0-1-A10-A12-nap-PA0109

R17-X000 Change to representative recorded

St.27 status event code: A-3-3-R10-R17-oth-X000

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

R17-X000 Change to representative recorded

St.27 status event code: A-3-3-R10-R17-oth-X000

R17-X000 Change to representative recorded

St.27 status event code: A-3-3-R10-R17-oth-X000

A201 Request for examination
P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U11-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

LAPS Lapse due to unpaid annual fee
PC1903 Unpaid annual fee

St.27 status event code: A-4-4-U10-U13-oth-PC1903

Not in force date: 20050129

Payment event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

PC1903 Unpaid annual fee

St.27 status event code: N-4-6-H10-H13-oth-PC1903

Ip right cessation event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

Not in force date: 20050129

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000