KR100309800B1 - 동기랜덤액세스메모리장치 - Google Patents

동기랜덤액세스메모리장치 Download PDF

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Publication number
KR100309800B1
KR100309800B1 KR1019930023603A KR930023603A KR100309800B1 KR 100309800 B1 KR100309800 B1 KR 100309800B1 KR 1019930023603 A KR1019930023603 A KR 1019930023603A KR 930023603 A KR930023603 A KR 930023603A KR 100309800 B1 KR100309800 B1 KR 100309800B1
Authority
KR
South Korea
Prior art keywords
counter
burst
signal
operation mode
memory device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
KR1019930023603A
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English (en)
Korean (ko)
Other versions
KR950015367A (ko
Inventor
박희철
권국환
임전택
Original Assignee
윤종용
삼성전자 주식회사
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Filing date
Publication date
Application filed by 윤종용, 삼성전자 주식회사 filed Critical 윤종용
Priority to KR1019930023603A priority Critical patent/KR100309800B1/ko
Priority to US08/337,186 priority patent/US5610874A/en
Priority to JP6274089A priority patent/JPH07169265A/ja
Priority to TW083110899A priority patent/TW308691B/zh
Publication of KR950015367A publication Critical patent/KR950015367A/ko
Application granted granted Critical
Publication of KR100309800B1 publication Critical patent/KR100309800B1/ko
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1072—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers for memories with random access ports synchronised on clock signal pulse trains, e.g. synchronous memories, self timed memories

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  • Dram (AREA)
KR1019930023603A 1993-11-08 1993-11-08 동기랜덤액세스메모리장치 Expired - Lifetime KR100309800B1 (ko)

Priority Applications (4)

Application Number Priority Date Filing Date Title
KR1019930023603A KR100309800B1 (ko) 1993-11-08 1993-11-08 동기랜덤액세스메모리장치
US08/337,186 US5610874A (en) 1993-11-08 1994-11-07 Fast burst-mode synchronous random access memory device
JP6274089A JPH07169265A (ja) 1993-11-08 1994-11-08 同期式ランダムアクセスメモリ装置
TW083110899A TW308691B (https=) 1993-11-08 1994-11-23

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019930023603A KR100309800B1 (ko) 1993-11-08 1993-11-08 동기랜덤액세스메모리장치

Publications (2)

Publication Number Publication Date
KR950015367A KR950015367A (ko) 1995-06-16
KR100309800B1 true KR100309800B1 (ko) 2001-12-15

Family

ID=19367541

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019930023603A Expired - Lifetime KR100309800B1 (ko) 1993-11-08 1993-11-08 동기랜덤액세스메모리장치

Country Status (4)

Country Link
US (1) US5610874A (https=)
JP (1) JPH07169265A (https=)
KR (1) KR100309800B1 (https=)
TW (1) TW308691B (https=)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2907074B2 (ja) * 1995-08-25 1999-06-21 日本電気株式会社 半導体記憶装置
JP2991094B2 (ja) * 1995-09-19 1999-12-20 日本電気株式会社 半導体記憶装置
KR0164805B1 (ko) * 1995-12-22 1999-02-01 김광호 버스트 모드를 지원하는 내부 컬럼 어드레스 발생 회로
JP3247603B2 (ja) * 1996-02-05 2002-01-21 インターナショナル・ビジネス・マシーンズ・コーポレーション プレデコーダ回路及びデコーダ回路
KR100218734B1 (ko) * 1996-05-06 1999-09-01 김영환 싱크로노스 메모리의 내부펄스 신호발생 방법 및 그장치
JPH09320269A (ja) * 1996-05-31 1997-12-12 Nippon Steel Corp アドレス装置
US6009038A (en) * 1996-05-31 1999-12-28 United Microelectronics Corporation Addressing unit
KR100301036B1 (ko) 1997-06-26 2001-09-03 윤종용 데이터입출력마스크입력버퍼의전류소모를감소시키기위한제어부를구비하는동기식반도체메모리장치
US5973993A (en) * 1998-02-27 1999-10-26 Micron Technology, Inc. Semiconductor memory burst length count determination detector
US6130853A (en) * 1998-03-30 2000-10-10 Etron Technology, Inc. Address decoding scheme for DDR memory
US6049505A (en) 1998-05-22 2000-04-11 Micron Technology, Inc. Method and apparatus for generating memory addresses for testing memory devices
JP4061841B2 (ja) * 1998-06-25 2008-03-19 セイコーエプソン株式会社 半導体記憶装置
JP3942332B2 (ja) * 2000-01-07 2007-07-11 富士通株式会社 半導体記憶装置
US7143257B2 (en) * 2003-10-14 2006-11-28 Atmel Corporation Method and apparatus of a smart decoding scheme for fast synchronous read in a memory system
KR100546418B1 (ko) * 2004-07-27 2006-01-26 삼성전자주식회사 데이터 출력시 ｄｄｒ 동작을 수행하는 비휘발성 메모리장치 및 데이터 출력 방법
US7257045B2 (en) * 2005-11-28 2007-08-14 Advanced Micro Devices, Inc. Uni-stage delay speculative address decoder

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05266685A (ja) * 1992-03-24 1993-10-15 Sharp Corp 記憶装置

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100214435B1 (ko) * 1990-07-25 1999-08-02 사와무라 시코 동기식 버스트 엑세스 메모리
US5077693A (en) * 1990-08-06 1991-12-31 Motorola, Inc. Dynamic random access memory
JP3992757B2 (ja) * 1991-04-23 2007-10-17 テキサス インスツルメンツ インコーポレイテツド マイクロプロセッサと同期するメモリ、及びデータプロセッサ、同期メモリ、周辺装置とシステムクロックを含むシステム
US5392239A (en) * 1993-05-06 1995-02-21 S3, Incorporated Burst-mode DRAM

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05266685A (ja) * 1992-03-24 1993-10-15 Sharp Corp 記憶装置

Also Published As

Publication number Publication date
KR950015367A (ko) 1995-06-16
US5610874A (en) 1997-03-11
JPH07169265A (ja) 1995-07-04
TW308691B (https=) 1997-06-21

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