KR100299816B1 - 전압발생회로 - Google Patents

전압발생회로 Download PDF

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Publication number
KR100299816B1
KR100299816B1 KR1019940017746A KR19940017746A KR100299816B1 KR 100299816 B1 KR100299816 B1 KR 100299816B1 KR 1019940017746 A KR1019940017746 A KR 1019940017746A KR 19940017746 A KR19940017746 A KR 19940017746A KR 100299816 B1 KR100299816 B1 KR 100299816B1
Authority
KR
South Korea
Prior art keywords
comparator
voltage
signal
output
mos transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1019940017746A
Other languages
English (en)
Korean (ko)
Other versions
KR950004264A (ko
Inventor
도미니끄 사비냑
디터 글라이스
만프레트 멩케
Original Assignee
칼 하인쯔 호르닝어
지멘스 악티엔게젤샤프트
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 칼 하인쯔 호르닝어, 지멘스 악티엔게젤샤프트 filed Critical 칼 하인쯔 호르닝어
Publication of KR950004264A publication Critical patent/KR950004264A/ko
Application granted granted Critical
Publication of KR100299816B1 publication Critical patent/KR100299816B1/ko
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/4074—Power supply or voltage generation circuits, e.g. bias voltage generators, substrate voltage generators, back-up power, power control circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G11C5/145—Applications of charge pumps; Boosted voltage circuits; Clamp circuits therefor
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G11C5/147—Voltage reference generators, voltage or current regulators; Internally lowered supply levels; Compensation for voltage drops

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Dram (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Read Only Memory (AREA)
  • Oscillators With Electromechanical Resonators (AREA)
  • Control Of Eletrric Generators (AREA)
  • Electrophonic Musical Instruments (AREA)
  • Electronic Switches (AREA)
  • Dc-Dc Converters (AREA)
  • Control Of Electrical Variables (AREA)
KR1019940017746A 1993-07-23 1994-07-22 전압발생회로 Expired - Fee Related KR100299816B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE4324853A DE4324853C1 (de) 1993-07-23 1993-07-23 Spannungserzeugungsschaltung
DEP4324853.5 1993-07-23

Publications (2)

Publication Number Publication Date
KR950004264A KR950004264A (ko) 1995-02-17
KR100299816B1 true KR100299816B1 (ko) 2001-10-22

Family

ID=6493602

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019940017746A Expired - Fee Related KR100299816B1 (ko) 1993-07-23 1994-07-22 전압발생회로

Country Status (7)

Country Link
US (1) US5592063A (enExample)
EP (1) EP0635838B1 (enExample)
JP (1) JP3755907B2 (enExample)
KR (1) KR100299816B1 (enExample)
AT (1) ATE179019T1 (enExample)
DE (2) DE4324853C1 (enExample)
TW (1) TW253056B (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11213674A (ja) * 1998-01-20 1999-08-06 Sony Corp 電圧供給回路
KR20040035925A (ko) * 2002-10-12 2004-04-30 린나이코리아 주식회사 조리기기용 노브 결합구조
KR100680441B1 (ko) * 2005-06-07 2007-02-08 주식회사 하이닉스반도체 안정적인 승압 전압을 발생하는 승압 전압 발생기
US7368948B2 (en) * 2005-07-15 2008-05-06 Infineon Technologies Ag Integrated receiver circuit
US8239190B2 (en) 2006-08-22 2012-08-07 Qualcomm Incorporated Time-warping frames of wideband vocoder
KR101404914B1 (ko) * 2008-02-12 2014-06-09 엘지전자 주식회사 모터, 이를 포함하는 세탁기 및 그 제어방법
US8680650B2 (en) * 2009-02-03 2014-03-25 Micron Technology, Inc. Capacitor structures having improved area efficiency
WO2014040449A1 (zh) 2012-09-14 2014-03-20 艾默生环境优化技术(苏州)有限公司 排气阀和包括排气阀的压缩机
US10090758B1 (en) * 2017-08-22 2018-10-02 Synaptics Incorporated Split reservoir capacitor architecture for a charge pump

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4587439A (en) * 1982-01-22 1986-05-06 U.S. Philips Corporation Pulse generator comprising at least two voltage comparison circuits
JPH01106622A (ja) * 1987-10-20 1989-04-24 Matsushita Electric Ind Co Ltd 充電比較回路
JPH03121614A (ja) * 1989-10-04 1991-05-23 Sanyo Electric Co Ltd 発振回路
JPH04318393A (ja) * 1991-04-17 1992-11-09 Mitsubishi Electric Corp 半導体記憶装置の基板電位発生回路
JPH05114291A (ja) * 1991-10-21 1993-05-07 Nec Corp 基準電圧発生回路

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4794278A (en) * 1987-12-30 1988-12-27 Intel Corporation Stable substrate bias generator for MOS circuits
US5267201A (en) * 1990-04-06 1993-11-30 Mosaid, Inc. High voltage boosted word line supply charge pump regulator for DRAM
JP2805973B2 (ja) * 1990-05-11 1998-09-30 日本電気株式会社 ブートストラップ回路
JP2607733B2 (ja) * 1990-05-31 1997-05-07 シャープ株式会社 半導体記憶装置の昇圧回路
KR940002859B1 (ko) * 1991-03-14 1994-04-04 삼성전자 주식회사 반도체 메모리장치에서의 워드라인 구동회로
US5168174A (en) * 1991-07-12 1992-12-01 Texas Instruments Incorporated Negative-voltage charge pump with feedback control
KR940008286B1 (ko) * 1991-08-19 1994-09-09 삼성전자 주식회사 내부전원발생회로
US5268871A (en) * 1991-10-03 1993-12-07 International Business Machines Corporation Power supply tracking regulator for a memory array
KR960000837B1 (ko) * 1992-12-02 1996-01-13 삼성전자주식회사 반도체 메모리장치
US5418751A (en) * 1993-09-29 1995-05-23 Texas Instruments Incorporated Variable frequency oscillator controlled EEPROM charge pump

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4587439A (en) * 1982-01-22 1986-05-06 U.S. Philips Corporation Pulse generator comprising at least two voltage comparison circuits
JPH01106622A (ja) * 1987-10-20 1989-04-24 Matsushita Electric Ind Co Ltd 充電比較回路
JPH03121614A (ja) * 1989-10-04 1991-05-23 Sanyo Electric Co Ltd 発振回路
JPH04318393A (ja) * 1991-04-17 1992-11-09 Mitsubishi Electric Corp 半導体記憶装置の基板電位発生回路
JPH05114291A (ja) * 1991-10-21 1993-05-07 Nec Corp 基準電圧発生回路

Also Published As

Publication number Publication date
DE4324853C1 (de) 1994-09-22
EP0635838B1 (de) 1999-04-14
ATE179019T1 (de) 1999-04-15
KR950004264A (ko) 1995-02-17
EP0635838A2 (de) 1995-01-25
JP3755907B2 (ja) 2006-03-15
TW253056B (enExample) 1995-08-01
DE59408104D1 (de) 1999-05-20
EP0635838A3 (de) 1996-11-06
US5592063A (en) 1997-01-07
JPH07130169A (ja) 1995-05-19
HK1003739A1 (en) 1998-11-06

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