KR100292552B1 - 데이타 전송방법 및 반도체 메모리 - Google Patents

데이타 전송방법 및 반도체 메모리 Download PDF

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Publication number
KR100292552B1
KR100292552B1 KR1019920007616A KR920007616A KR100292552B1 KR 100292552 B1 KR100292552 B1 KR 100292552B1 KR 1019920007616 A KR1019920007616 A KR 1019920007616A KR 920007616 A KR920007616 A KR 920007616A KR 100292552 B1 KR100292552 B1 KR 100292552B1
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KR
South Korea
Prior art keywords
signal
address
data transfer
memory cell
control signal
Prior art date
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Expired - Fee Related
Application number
KR1019920007616A
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English (en)
Korean (ko)
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KR920022290A (ko
Inventor
디터 좀머
도미니끄 사비냑
Original Assignee
칼 하인쯔 호르닝어
지멘스 악티엔게젤샤프트
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Application filed by 칼 하인쯔 호르닝어, 지멘스 악티엔게젤샤프트 filed Critical 칼 하인쯔 호르닝어
Publication of KR920022290A publication Critical patent/KR920022290A/ko
Application granted granted Critical
Publication of KR100292552B1 publication Critical patent/KR100292552B1/ko
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Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/22—Read-write [R-W] timing or clocking circuits; Read-write [R-W] control signal generators or management 
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1015—Read-write modes for single port memories, i.e. having either a random port or a serial port
    • G11C7/103—Read-write modes for single port memories, i.e. having either a random port or a serial port using serially addressed read-write data registers
    • G11C7/1033—Read-write modes for single port memories, i.e. having either a random port or a serial port using serially addressed read-write data registers using data registers of which only one stage is addressed for sequentially outputting data from a predetermined number of stages, e.g. nibble read-write mode

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Dram (AREA)
  • Static Random-Access Memory (AREA)
  • Semiconductor Memories (AREA)
  • Credit Cards Or The Like (AREA)
KR1019920007616A 1991-05-06 1992-05-06 데이타 전송방법 및 반도체 메모리 Expired - Fee Related KR100292552B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE4114744A DE4114744C1 (enExample) 1991-05-06 1991-05-06
DEP4114744.8 1991-05-06

Publications (2)

Publication Number Publication Date
KR920022290A KR920022290A (ko) 1992-12-19
KR100292552B1 true KR100292552B1 (ko) 2001-06-01

Family

ID=6431081

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019920007616A Expired - Fee Related KR100292552B1 (ko) 1991-05-06 1992-05-06 데이타 전송방법 및 반도체 메모리

Country Status (6)

Country Link
US (1) US5357469A (enExample)
EP (1) EP0513611B1 (enExample)
JP (1) JP3316001B2 (enExample)
KR (1) KR100292552B1 (enExample)
AT (1) ATE161999T1 (enExample)
DE (2) DE4114744C1 (enExample)

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07226079A (ja) * 1994-02-14 1995-08-22 Matsushita Electric Ind Co Ltd 半導体メモリ装置
US5598376A (en) * 1994-12-23 1997-01-28 Micron Technology, Inc. Distributed write data drivers for burst access memories
US5668773A (en) * 1994-12-23 1997-09-16 Micron Technology, Inc. Synchronous burst extended data out DRAM
US5682354A (en) * 1995-11-06 1997-10-28 Micron Technology, Inc. CAS recognition in burst extended data out DRAM
US6525971B2 (en) 1995-06-30 2003-02-25 Micron Technology, Inc. Distributed write data drivers for burst access memories
US6804760B2 (en) 1994-12-23 2004-10-12 Micron Technology, Inc. Method for determining a type of memory present in a system
US5640364A (en) * 1994-12-23 1997-06-17 Micron Technology, Inc. Self-enabling pulse trapping circuit
US5729503A (en) * 1994-12-23 1998-03-17 Micron Technology, Inc. Address transition detection on a synchronous design
US5721859A (en) * 1994-12-23 1998-02-24 Micron Technology, Inc. Counter control circuit in a burst memory
US5652724A (en) * 1994-12-23 1997-07-29 Micron Technology, Inc. Burst EDO memory device having pipelined output buffer
US5610864A (en) * 1994-12-23 1997-03-11 Micron Technology, Inc. Burst EDO memory device with maximized write cycle timing
US5526320A (en) 1994-12-23 1996-06-11 Micron Technology Inc. Burst EDO memory device
US5675549A (en) * 1994-12-23 1997-10-07 Micron Technology, Inc. Burst EDO memory device address counter
US5717654A (en) * 1995-02-10 1998-02-10 Micron Technology, Inc. Burst EDO memory device with maximized write cycle timing
US5850368A (en) * 1995-06-01 1998-12-15 Micron Technology, Inc. Burst EDO memory address counter
US6470405B2 (en) * 1995-10-19 2002-10-22 Rambus Inc. Protocol for communication with dynamic memory
US6810449B1 (en) 1995-10-19 2004-10-26 Rambus, Inc. Protocol for communication with dynamic memory
US5729504A (en) * 1995-12-14 1998-03-17 Micron Technology, Inc. Continuous burst edo memory device
US5966724A (en) * 1996-01-11 1999-10-12 Micron Technology, Inc. Synchronous memory device with dual page and burst mode operations
US7681005B1 (en) 1996-01-11 2010-03-16 Micron Technology, Inc. Asynchronously-accessible memory device with mode selection circuitry for burst or pipelined operation
US6401186B1 (en) 1996-07-03 2002-06-04 Micron Technology, Inc. Continuous burst memory which anticipates a next requested start address
US6981126B1 (en) 1996-07-03 2005-12-27 Micron Technology, Inc. Continuous interleave burst access
JPH10124447A (ja) * 1996-10-18 1998-05-15 Fujitsu Ltd データ転送制御方法及び装置
US7103742B1 (en) 1997-12-03 2006-09-05 Micron Technology, Inc. Burst/pipelined edo memory device
US7927948B2 (en) 2005-07-20 2011-04-19 Micron Technology, Inc. Devices with nanocrystals and methods of formation
CN108327042B (zh) * 2018-03-22 2023-09-15 昆明理工大学 一种陶瓷颗粒增强金属基复合材料预制体的自动化制备装置
US11630785B2 (en) 2020-11-03 2023-04-18 Western Digital Technologies, Inc. Data storage with improved data transfer

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0174845A2 (en) * 1984-09-11 1986-03-19 Fujitsu Limited Semiconductor memory device

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4344156A (en) * 1980-10-10 1982-08-10 Inmos Corporation High speed data transfer for a semiconductor memory
JPS60136086A (ja) * 1983-12-23 1985-07-19 Hitachi Ltd 半導体記憶装置
US4897818A (en) * 1983-12-30 1990-01-30 Texas Instruments Incorporated Dual-port memory with inhibited random access during transfer cycles
JPS6180597A (ja) * 1984-09-26 1986-04-24 Hitachi Ltd 半導体記憶装置
JPH0652632B2 (ja) * 1985-01-23 1994-07-06 株式会社日立製作所 ダイナミツク型ｒａｍ
JPH079751B2 (ja) * 1985-06-17 1995-02-01 株式会社日立製作所 半導体記憶装置
JPH01205788A (ja) * 1988-02-12 1989-08-18 Toshiba Corp 半導体集積回路
US5150327A (en) * 1988-10-31 1992-09-22 Matsushita Electric Industrial Co., Ltd. Semiconductor memory and video signal processing circuit having the same
KR920000962B1 (ko) * 1989-05-26 1992-01-31 삼성전자 주식회사 반도체 메모리 장치의 데이터 출력단 전압레벨 조절회로
US4998222A (en) * 1989-12-04 1991-03-05 Nec Electronics Inc. Dynamic random access memory with internally gated RAS

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0174845A2 (en) * 1984-09-11 1986-03-19 Fujitsu Limited Semiconductor memory device

Also Published As

Publication number Publication date
HK1005492A1 (en) 1999-01-08
US5357469A (en) 1994-10-18
DE59209095D1 (de) 1998-02-12
DE4114744C1 (enExample) 1992-05-27
ATE161999T1 (de) 1998-01-15
EP0513611B1 (de) 1998-01-07
KR920022290A (ko) 1992-12-19
EP0513611A3 (enExample) 1995-05-17
JPH05151768A (ja) 1993-06-18
JP3316001B2 (ja) 2002-08-19
EP0513611A2 (de) 1992-11-19

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