KR100260663B1 - 연장된 수명의 시준기 - Google Patents

연장된 수명의 시준기 Download PDF

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Publication number
KR100260663B1
KR100260663B1 KR1019940702084A KR19940702084A KR100260663B1 KR 100260663 B1 KR100260663 B1 KR 100260663B1 KR 1019940702084 A KR1019940702084 A KR 1019940702084A KR 19940702084 A KR19940702084 A KR 19940702084A KR 100260663 B1 KR100260663 B1 KR 100260663B1
Authority
KR
South Korea
Prior art keywords
collimator
wafer
target
sputter coating
unit cell
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
KR1019940702084A
Other languages
English (en)
Korean (ko)
Other versions
KR940704051A (ko
Inventor
디. 헐위트 스티븐
Original Assignee
히가시 데츠로
도쿄 엘렉트론 가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Application filed by 히가시 데츠로, 도쿄 엘렉트론 가부시키가이샤 filed Critical 히가시 데츠로
Publication of KR940704051A publication Critical patent/KR940704051A/ko
Application granted granted Critical
Publication of KR100260663B1 publication Critical patent/KR100260663B1/ko
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3447—Collimators, shutters, apertures
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C23C14/042—Coating on selected surface areas, e.g. using masks using masks
    • C23C14/044—Coating on selected surface areas, e.g. using masks using masks using masks to redistribute rather than totally prevent coating, e.g. producing thickness gradient
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
KR1019940702084A 1991-12-30 1992-12-29 연장된 수명의 시준기 Expired - Lifetime KR100260663B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US816.030 1991-12-30
US816,030 1991-12-30
US07/816,030 US5223108A (en) 1991-12-30 1991-12-30 Extended lifetime collimator
PCT/US1992/011272 WO1993013542A1 (en) 1991-12-30 1992-12-29 Extended lifetime collimator

Publications (2)

Publication Number Publication Date
KR940704051A KR940704051A (ko) 1994-12-12
KR100260663B1 true KR100260663B1 (ko) 2000-07-01

Family

ID=25219508

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019940702084A Expired - Lifetime KR100260663B1 (ko) 1991-12-30 1992-12-29 연장된 수명의 시준기

Country Status (10)

Country Link
US (1) US5223108A (enExample)
EP (1) EP0619916B1 (enExample)
JP (1) JP3469239B2 (enExample)
KR (1) KR100260663B1 (enExample)
AU (1) AU3335993A (enExample)
CA (1) CA2125180A1 (enExample)
DE (1) DE69209319T2 (enExample)
SG (1) SG49698A1 (enExample)
TW (1) TW221064B (enExample)
WO (1) WO1993013542A1 (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20180063347A (ko) * 2015-10-27 2018-06-11 어플라이드 머티어리얼스, 인코포레이티드 Pvd 스퍼터 챔버를 위한 바이어스가능 플럭스 최적화기/콜리메이터
CN109338293A (zh) * 2014-11-26 2019-02-15 应用材料公司 在基板处理腔室中使用的准直器

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US5527438A (en) * 1994-12-16 1996-06-18 Applied Materials, Inc. Cylindrical sputtering shield
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US5885425A (en) * 1995-06-06 1999-03-23 International Business Machines Corporation Method for selective material deposition on one side of raised or recessed features
US5653811A (en) 1995-07-19 1997-08-05 Chan; Chung System for the plasma treatment of large area substrates
US5705042A (en) * 1996-01-29 1998-01-06 Micron Technology, Inc. Electrically isolated collimator and method
US5985102A (en) * 1996-01-29 1999-11-16 Micron Technology, Inc. Kit for electrically isolating collimator of PVD chamber, chamber so modified, and method of using
US5863396A (en) * 1996-10-25 1999-01-26 Applied Materials, Inc. Method and apparatus for fabricating a wafer spacing mask on a substrate support chuck
US6168832B1 (en) 1997-01-20 2001-01-02 Coherent, Inc. Three-dimensional masking method for control of coating thickness
GB9701114D0 (en) * 1997-01-20 1997-03-12 Coherent Optics Europ Ltd Three-dimensional masking method for control of optical coating thickness
EP0860513A3 (en) * 1997-02-19 2000-01-12 Canon Kabushiki Kaisha Thin film forming apparatus and process for forming thin film using same
US6000270A (en) * 1997-06-03 1999-12-14 Sjm Engineering, Inc. Collimator having tapered edges and method of making the same
US6030513A (en) * 1997-12-05 2000-02-29 Applied Materials, Inc. Full face mask for capacitance-voltage measurements
US6096404A (en) * 1997-12-05 2000-08-01 Applied Materials, Inc. Full face mask for capacitance-voltage measurements
US6036821A (en) * 1998-01-29 2000-03-14 International Business Machines Corporation Enhanced collimated sputtering apparatus and its method of use
US6269765B1 (en) * 1998-02-11 2001-08-07 Silicon Genesis Corporation Collection devices for plasma immersion ion implantation
US6274459B1 (en) 1998-02-17 2001-08-14 Silicon Genesis Corporation Method for non mass selected ion implant profile control
US6287436B1 (en) 1998-02-27 2001-09-11 Innovent, Inc. Brazed honeycomb collimator
US6482301B1 (en) 1998-06-04 2002-11-19 Seagate Technology, Inc. Target shields for improved magnetic properties of a recording medium
US6592728B1 (en) * 1998-08-04 2003-07-15 Veeco-Cvc, Inc. Dual collimated deposition apparatus and method of use
US6261406B1 (en) * 1999-01-11 2001-07-17 Lsi Logic Corporation Confinement device for use in dry etching of substrate surface and method of dry etching a wafer surface
US6458723B1 (en) 1999-06-24 2002-10-01 Silicon Genesis Corporation High temperature implant apparatus
JP3529676B2 (ja) * 1999-09-16 2004-05-24 株式会社東芝 半導体製造装置および半導体装置の製造方法
US7556740B2 (en) * 2002-08-27 2009-07-07 Kyocera Corporation Method for producing a solar cell
US7459098B2 (en) * 2002-08-28 2008-12-02 Kyocera Corporation Dry etching apparatus, dry etching method, and plate and tray used therein
US7556741B2 (en) * 2002-08-28 2009-07-07 Kyocera Corporation Method for producing a solar cell
US20040086639A1 (en) * 2002-09-24 2004-05-06 Grantham Daniel Harrison Patterned thin-film deposition using collimating heated mask asembly
JP4200290B2 (ja) * 2003-05-21 2008-12-24 パナソニック株式会社 マスクユニット
JP4923450B2 (ja) * 2005-07-01 2012-04-25 富士ゼロックス株式会社 バッチ処理支援装置および方法、プログラム
US20070012559A1 (en) * 2005-07-13 2007-01-18 Applied Materials, Inc. Method of improving magnetron sputtering of large-area substrates using a removable anode
US20070012558A1 (en) * 2005-07-13 2007-01-18 Applied Materials, Inc. Magnetron sputtering system for large-area substrates
US20070084720A1 (en) * 2005-07-13 2007-04-19 Akihiro Hosokawa Magnetron sputtering system for large-area substrates having removable anodes
US20070012663A1 (en) * 2005-07-13 2007-01-18 Akihiro Hosokawa Magnetron sputtering system for large-area substrates having removable anodes
US20070051616A1 (en) * 2005-09-07 2007-03-08 Le Hienminh H Multizone magnetron assembly
US20070056843A1 (en) * 2005-09-13 2007-03-15 Applied Materials, Inc. Method of processing a substrate using a large-area magnetron sputtering chamber with individually controlled sputtering zones
US20070056850A1 (en) * 2005-09-13 2007-03-15 Applied Materials, Inc. Large-area magnetron sputtering chamber with individually controlled sputtering zones
US7588668B2 (en) 2005-09-13 2009-09-15 Applied Materials, Inc. Thermally conductive dielectric bonding of sputtering targets using diamond powder filler or thermally conductive ceramic fillers
TW201213572A (en) * 2010-09-29 2012-04-01 Hon Hai Prec Ind Co Ltd Sputtering apparatus
JP5985581B2 (ja) * 2014-11-05 2016-09-06 株式会社東芝 処理装置及びコリメータ
US9887073B2 (en) * 2015-02-13 2018-02-06 Taiwan Semiconductor Manufacturing Co., Ltd. Physical vapor deposition system and physical vapor depositing method using the same
CN107923036B (zh) * 2016-03-14 2020-01-17 株式会社东芝 处理装置和准直器
JP6088083B1 (ja) * 2016-03-14 2017-03-01 株式会社東芝 処理装置及びコリメータ
US11424112B2 (en) * 2017-11-03 2022-08-23 Varian Semiconductor Equipment Associates, Inc. Transparent halo assembly for reduced particle generation

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109338293A (zh) * 2014-11-26 2019-02-15 应用材料公司 在基板处理腔室中使用的准直器
KR20180063347A (ko) * 2015-10-27 2018-06-11 어플라이드 머티어리얼스, 인코포레이티드 Pvd 스퍼터 챔버를 위한 바이어스가능 플럭스 최적화기/콜리메이터
KR102695398B1 (ko) * 2015-10-27 2024-08-13 어플라이드 머티어리얼스, 인코포레이티드 Pvd 스퍼터 챔버를 위한 바이어스가능 플럭스 최적화기/콜리메이터

Also Published As

Publication number Publication date
DE69209319D1 (de) 1996-04-25
EP0619916B1 (en) 1996-03-20
TW221064B (enExample) 1994-02-11
WO1993013542A1 (en) 1993-07-08
JPH07502786A (ja) 1995-03-23
KR940704051A (ko) 1994-12-12
AU3335993A (en) 1993-07-28
CA2125180A1 (en) 1993-07-08
SG49698A1 (en) 1998-06-15
DE69209319T2 (de) 1996-11-07
EP0619916A1 (en) 1994-10-19
JP3469239B2 (ja) 2003-11-25
US5223108A (en) 1993-06-29

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