KR100207136B1 - 전극기판, 그 제조방법 및 이를 사용한 표시장치 - Google Patents
전극기판, 그 제조방법 및 이를 사용한 표시장치 Download PDFInfo
- Publication number
- KR100207136B1 KR100207136B1 KR1019950044505A KR19950044505A KR100207136B1 KR 100207136 B1 KR100207136 B1 KR 100207136B1 KR 1019950044505 A KR1019950044505 A KR 1019950044505A KR 19950044505 A KR19950044505 A KR 19950044505A KR 100207136 B1 KR100207136 B1 KR 100207136B1
- Authority
- KR
- South Korea
- Prior art keywords
- wiring pattern
- conductor layer
- electrode
- display device
- wiring
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136286—Wiring, e.g. gate line, drain line
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1345—Conductors connecting electrodes to cell terminals
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/13625—Patterning using multi-mask exposure
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136286—Wiring, e.g. gate line, drain line
- G02F1/13629—Multilayer wirings
Landscapes
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Optics & Photonics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- General Physics & Mathematics (AREA)
- Mathematical Physics (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Liquid Crystal (AREA)
- Thin Film Transistor (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP94-289324 | 1994-11-24 | ||
| JP28932494 | 1994-11-24 | ||
| JP25027595A JPH08201853A (ja) | 1994-11-24 | 1995-09-28 | 電極基板および平面表示装置 |
| JP95-250275 | 1995-09-28 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR960018698A KR960018698A (ko) | 1996-06-17 |
| KR100207136B1 true KR100207136B1 (ko) | 1999-07-15 |
Family
ID=26539712
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1019950044505A Expired - Fee Related KR100207136B1 (ko) | 1994-11-24 | 1995-11-24 | 전극기판, 그 제조방법 및 이를 사용한 표시장치 |
Country Status (4)
| Country | Link |
|---|---|
| US (2) | US6208390B1 (enExample) |
| JP (1) | JPH08201853A (enExample) |
| KR (1) | KR100207136B1 (enExample) |
| TW (1) | TW293173B (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101928983B1 (ko) * | 2011-07-20 | 2018-12-14 | 삼성디스플레이 주식회사 | 표시 기판 제조 방법 |
Families Citing this family (24)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH08201853A (ja) * | 1994-11-24 | 1996-08-09 | Toshiba Electron Eng Corp | 電極基板および平面表示装置 |
| JP3762002B2 (ja) * | 1996-11-29 | 2006-03-29 | 株式会社東芝 | 薄膜トランジスタ、及び液晶表示装置 |
| KR100472174B1 (ko) * | 1997-06-18 | 2005-06-07 | 삼성전자주식회사 | 중첩 노광을 이용한 액정 표시 장치의 제조방법 |
| JP4070896B2 (ja) * | 1998-10-07 | 2008-04-02 | 三菱電機株式会社 | 電気光学素子および該電気光学素子の製造方法 |
| JP2001005038A (ja) | 1999-04-26 | 2001-01-12 | Samsung Electronics Co Ltd | 表示装置用薄膜トランジスタ基板及びその製造方法 |
| KR100333979B1 (ko) * | 1999-04-26 | 2002-04-24 | 윤종용 | 액정 표시 장치용 박막 트랜지스터 기판 및 그의 제조 방법 |
| JP4118484B2 (ja) | 2000-03-06 | 2008-07-16 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| JP2001257350A (ja) * | 2000-03-08 | 2001-09-21 | Semiconductor Energy Lab Co Ltd | 半導体装置およびその作製方法 |
| JP4118485B2 (ja) * | 2000-03-13 | 2008-07-16 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| JP4700160B2 (ja) * | 2000-03-13 | 2011-06-15 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| JP4683688B2 (ja) * | 2000-03-16 | 2011-05-18 | 株式会社半導体エネルギー研究所 | 液晶表示装置の作製方法 |
| JP4393662B2 (ja) * | 2000-03-17 | 2010-01-06 | 株式会社半導体エネルギー研究所 | 液晶表示装置の作製方法 |
| US6900084B1 (en) | 2000-05-09 | 2005-05-31 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device having a display device |
| JP3880356B2 (ja) * | 2000-12-05 | 2007-02-14 | キヤノン株式会社 | 表示装置 |
| US7071037B2 (en) | 2001-03-06 | 2006-07-04 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
| JP2004219991A (ja) * | 2002-12-27 | 2004-08-05 | Sharp Corp | 表示装置用基板およびこれを有する液晶表示装置 |
| JP4877866B2 (ja) * | 2003-10-28 | 2012-02-15 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| JP4784382B2 (ja) * | 2005-09-26 | 2011-10-05 | ソニー株式会社 | 液晶表示装置 |
| JP5136745B2 (ja) * | 2006-12-13 | 2013-02-06 | 大日本印刷株式会社 | 多重露光技術におけるマスク製造誤差検証方法 |
| US8330887B2 (en) * | 2007-07-27 | 2012-12-11 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device and electronic device |
| JP2010066486A (ja) * | 2008-09-10 | 2010-03-25 | Citizen Finetech Miyota Co Ltd | 大型lcos表示素子及びその製造方法 |
| WO2011037102A1 (ja) | 2009-09-28 | 2011-03-31 | 凸版印刷株式会社 | アクティブマトリクス基板及びその製造方法並びに画像表示装置 |
| CN104662646B (zh) * | 2012-09-21 | 2018-01-09 | 凸版印刷株式会社 | 薄膜晶体管及其制造方法、图像显示装置 |
| TWI545381B (zh) * | 2014-05-21 | 2016-08-11 | 群創光電股份有限公司 | 顯示裝置 |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5042918A (en) * | 1988-11-15 | 1991-08-27 | Kabushiki Kaisha Toshiba | Liquid crystal display device |
| US5162933A (en) * | 1990-05-16 | 1992-11-10 | Nippon Telegraph And Telephone Corporation | Active matrix structure for liquid crystal display elements wherein each of the gate/data lines includes at least a molybdenum-base alloy layer containing 0.5 to 10 wt. % of chromium |
| EP0545327A1 (en) * | 1991-12-02 | 1993-06-09 | Matsushita Electric Industrial Co., Ltd. | Thin-film transistor array for use in a liquid crystal display |
| JP3529153B2 (ja) * | 1993-03-04 | 2004-05-24 | 三星電子株式会社 | 液晶表示装置及びその製造方法 |
| US5502583A (en) * | 1993-05-15 | 1996-03-26 | Nec Corporation | Liquid crystal display device capable of compensating for a positioning error between a drain line and a display electrode |
| US5777703A (en) * | 1994-09-30 | 1998-07-07 | Sanyo Electric Co., Ltd. | Active matrix type liquid crystal display apparatus with a projection part in the drain line |
| JPH08201853A (ja) * | 1994-11-24 | 1996-08-09 | Toshiba Electron Eng Corp | 電極基板および平面表示装置 |
| JPH0980476A (ja) * | 1995-09-12 | 1997-03-28 | Nec Corp | アクティブマトリックス基板とその製造方法 |
| JP3222762B2 (ja) * | 1996-04-26 | 2001-10-29 | シャープ株式会社 | アクティブマトリクス基板およびその製造方法 |
-
1995
- 1995-09-28 JP JP25027595A patent/JPH08201853A/ja not_active Withdrawn
- 1995-11-22 US US08/561,971 patent/US6208390B1/en not_active Expired - Fee Related
- 1995-11-23 TW TW084112511A patent/TW293173B/zh active
- 1995-11-24 KR KR1019950044505A patent/KR100207136B1/ko not_active Expired - Fee Related
-
2001
- 2001-02-22 US US09/789,811 patent/US6411350B2/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101928983B1 (ko) * | 2011-07-20 | 2018-12-14 | 삼성디스플레이 주식회사 | 표시 기판 제조 방법 |
Also Published As
| Publication number | Publication date |
|---|---|
| KR960018698A (ko) | 1996-06-17 |
| US6208390B1 (en) | 2001-03-27 |
| TW293173B (enExample) | 1996-12-11 |
| US6411350B2 (en) | 2002-06-25 |
| US20010026342A1 (en) | 2001-10-04 |
| JPH08201853A (ja) | 1996-08-09 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR100207136B1 (ko) | 전극기판, 그 제조방법 및 이를 사용한 표시장치 | |
| US6873382B2 (en) | Liquid crystal display device having array substrate of color filter on thin film transistor structure and manufacturing method thereof | |
| US9069220B2 (en) | Array substrate for liquid crystal display device and method of fabricating the same | |
| US7659130B2 (en) | Thin film transistor array panel for display and manufacturing method thereof | |
| JP4897995B2 (ja) | 液晶表示装置用薄膜トランジスタ基板 | |
| US7190000B2 (en) | Thin film transistor array panel and manufacturing method thereof | |
| US20080210943A1 (en) | Thin film transistor array panel and manufacturing method thereof | |
| US7388653B2 (en) | Exposure mask and method for divisional exposure | |
| US6567135B1 (en) | Liquid crystal display device and method for fabricating the same | |
| US7136122B2 (en) | Liquid crystal display and manufacturing method thereof | |
| US6359666B1 (en) | TFT-type LCD and method of making with pixel electrodes and bus lines having two layers | |
| US7259807B2 (en) | Method of manufacturing thin film transistor array panel and liquid crystal display | |
| KR100324913B1 (ko) | 표시장치용 어레이 기판 및 그 제조방법 | |
| CN100458533C (zh) | 薄膜晶体管阵列面板及其制造方法 | |
| KR20010050708A (ko) | 액정 표시 장치용 박막 트랜지스터 기판 | |
| KR100650400B1 (ko) | 액정 표시 장치용 어레이 기판 및 그의 제조 방법 | |
| KR20020011574A (ko) | 액정 표시 장치용 어레이 기판 및 그 제조 방법 | |
| US7547588B2 (en) | Thin film transistor array panel | |
| JP3987889B2 (ja) | 電極基板および平面表示装置 | |
| JP2002182242A (ja) | 液晶表示装置の製造方法 | |
| KR20030058327A (ko) | 액정 표시 장치용 어레이 기판 및 그의 제조 방법 | |
| KR100656904B1 (ko) | 액정 표시 장치용 박막 트랜지스터 기판 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A201 | Request for examination | ||
| PA0109 | Patent application |
St.27 status event code: A-0-1-A10-A12-nap-PA0109 |
|
| PA0201 | Request for examination |
St.27 status event code: A-1-2-D10-D11-exm-PA0201 |
|
| PA0201 | Request for examination |
St.27 status event code: A-1-2-D10-D11-exm-PA0201 |
|
| R17-X000 | Change to representative recorded |
St.27 status event code: A-3-3-R10-R17-oth-X000 |
|
| PG1501 | Laying open of application |
St.27 status event code: A-1-1-Q10-Q12-nap-PG1501 |
|
| E902 | Notification of reason for refusal | ||
| PE0902 | Notice of grounds for rejection |
St.27 status event code: A-1-2-D10-D21-exm-PE0902 |
|
| R18-X000 | Changes to party contact information recorded |
St.27 status event code: A-3-3-R10-R18-oth-X000 |
|
| PN2301 | Change of applicant |
St.27 status event code: A-3-3-R10-R13-asn-PN2301 St.27 status event code: A-3-3-R10-R11-asn-PN2301 |
|
| P11-X000 | Amendment of application requested |
St.27 status event code: A-2-2-P10-P11-nap-X000 |
|
| P13-X000 | Application amended |
St.27 status event code: A-2-2-P10-P13-nap-X000 |
|
| E701 | Decision to grant or registration of patent right | ||
| PE0701 | Decision of registration |
St.27 status event code: A-1-2-D10-D22-exm-PE0701 |
|
| R18-X000 | Changes to party contact information recorded |
St.27 status event code: A-3-3-R10-R18-oth-X000 |
|
| R18-X000 | Changes to party contact information recorded |
St.27 status event code: A-3-3-R10-R18-oth-X000 |
|
| GRNT | Written decision to grant | ||
| PR0701 | Registration of establishment |
St.27 status event code: A-2-4-F10-F11-exm-PR0701 |
|
| PR1002 | Payment of registration fee |
St.27 status event code: A-2-2-U10-U11-oth-PR1002 Fee payment year number: 1 |
|
| PG1601 | Publication of registration |
St.27 status event code: A-4-4-Q10-Q13-nap-PG1601 |
|
| R18-X000 | Changes to party contact information recorded |
St.27 status event code: A-5-5-R10-R18-oth-X000 |
|
| PR1001 | Payment of annual fee |
St.27 status event code: A-4-4-U10-U11-oth-PR1001 Fee payment year number: 4 |
|
| PR1001 | Payment of annual fee |
St.27 status event code: A-4-4-U10-U11-oth-PR1001 Fee payment year number: 5 |
|
| PR1001 | Payment of annual fee |
St.27 status event code: A-4-4-U10-U11-oth-PR1001 Fee payment year number: 6 |
|
| PR1001 | Payment of annual fee |
St.27 status event code: A-4-4-U10-U11-oth-PR1001 Fee payment year number: 7 |
|
| PR1001 | Payment of annual fee |
St.27 status event code: A-4-4-U10-U11-oth-PR1001 Fee payment year number: 8 |
|
| FPAY | Annual fee payment |
Payment date: 20070330 Year of fee payment: 9 |
|
| PR1001 | Payment of annual fee |
St.27 status event code: A-4-4-U10-U11-oth-PR1001 Fee payment year number: 9 |
|
| LAPS | Lapse due to unpaid annual fee | ||
| PC1903 | Unpaid annual fee |
St.27 status event code: A-4-4-U10-U13-oth-PC1903 Not in force date: 20080413 Payment event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE |
|
| PC1903 | Unpaid annual fee |
St.27 status event code: N-4-6-H10-H13-oth-PC1903 Ip right cessation event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE Not in force date: 20080413 |
|
| R18-X000 | Changes to party contact information recorded |
St.27 status event code: A-5-5-R10-R18-oth-X000 |