KR100200512B1 - 박막트랜지스터 및 그 제조방법 - Google Patents

박막트랜지스터 및 그 제조방법 Download PDF

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Publication number
KR100200512B1
KR100200512B1 KR1019950025448A KR19950025448A KR100200512B1 KR 100200512 B1 KR100200512 B1 KR 100200512B1 KR 1019950025448 A KR1019950025448 A KR 1019950025448A KR 19950025448 A KR19950025448 A KR 19950025448A KR 100200512 B1 KR100200512 B1 KR 100200512B1
Authority
KR
South Korea
Prior art keywords
film
semiconductor film
intrinsic semiconductor
source
insulating film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
KR1019950025448A
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English (en)
Korean (ko)
Other versions
KR960009075A (ko
Inventor
가즈히로 사사키
히로미쓰 이시이
마코도 사사키
시도모 와다요
Original Assignee
가시오 가즈오
가시오게산키 가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 가시오 가즈오, 가시오게산키 가부시키가이샤 filed Critical 가시오 가즈오
Publication of KR960009075A publication Critical patent/KR960009075A/ko
Application granted granted Critical
Publication of KR100200512B1 publication Critical patent/KR100200512B1/ko
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0312—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes
    • H10D30/0316—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes of lateral bottom-gate TFTs comprising only a single gate
    • H10P10/00—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0321—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6706—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device for preventing leakage current 

Landscapes

  • Thin Film Transistor (AREA)
KR1019950025448A 1994-08-23 1995-08-18 박막트랜지스터 및 그 제조방법 Expired - Lifetime KR100200512B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP21956794A JP3412277B2 (ja) 1994-08-23 1994-08-23 薄膜トランジスタおよびその製造方法
JP94-219567 1994-08-23

Publications (2)

Publication Number Publication Date
KR960009075A KR960009075A (ko) 1996-03-22
KR100200512B1 true KR100200512B1 (ko) 1999-06-15

Family

ID=16737541

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019950025448A Expired - Lifetime KR100200512B1 (ko) 1994-08-23 1995-08-18 박막트랜지스터 및 그 제조방법

Country Status (4)

Country Link
US (1) US5757028A (cg-RX-API-DMAC10.html)
JP (1) JP3412277B2 (cg-RX-API-DMAC10.html)
KR (1) KR100200512B1 (cg-RX-API-DMAC10.html)
TW (1) TW278249B (cg-RX-API-DMAC10.html)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100701826B1 (ko) * 2006-12-29 2007-03-30 석우엔지니어링 주식회사 공동주택용 전기단자함

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6323034B1 (en) * 1999-08-12 2001-11-27 Industrial Technology Research Institute Amorphous TFT process
TW577176B (en) * 2003-03-31 2004-02-21 Ind Tech Res Inst Structure of thin-film transistor, and the manufacturing method thereof
TWI243484B (en) * 2004-12-10 2005-11-11 Au Optronics Corp Thin film transistor and method of making the same
JP4579012B2 (ja) * 2005-03-03 2010-11-10 シャープ株式会社 液晶表示装置の製造方法
TWI345313B (en) * 2005-09-05 2011-07-11 Au Optronics Corp Thin film transistor and method of manufacturing the same
KR101261609B1 (ko) * 2006-07-06 2013-05-06 삼성디스플레이 주식회사 박막 트랜지스터, 표시판 및 그 제조 방법
JP5428404B2 (ja) * 2009-03-09 2014-02-26 カシオ計算機株式会社 薄膜トランジスタ及び薄膜トランジスタの製造方法
CN107195328B (zh) * 2009-10-09 2020-11-10 株式会社半导体能源研究所 移位寄存器和显示装置以及其驱动方法
KR101836067B1 (ko) * 2009-12-21 2018-03-08 가부시키가이샤 한도오따이 에네루기 켄큐쇼 박막 트랜지스터와 그 제작 방법
TWI469356B (zh) * 2010-03-03 2015-01-11 Au Optronics Corp 薄膜電晶體及其製造方法
CN101794713A (zh) * 2010-03-18 2010-08-04 友达光电股份有限公司 薄膜晶体管及其制造方法
JP5931573B2 (ja) * 2011-05-13 2016-06-08 株式会社半導体エネルギー研究所 半導体装置の作製方法
US10032924B2 (en) * 2014-03-31 2018-07-24 The Hong Kong University Of Science And Technology Metal oxide thin film transistor with channel, source and drain regions respectively capped with covers of different gas permeability
US10504939B2 (en) 2017-02-21 2019-12-10 The Hong Kong University Of Science And Technology Integration of silicon thin-film transistors and metal-oxide thin film transistors

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61208876A (ja) * 1985-03-14 1986-09-17 Sony Corp 薄膜トランジスタ
JPH0611060B2 (ja) * 1987-08-21 1994-02-09 日本電気株式会社 薄膜トランジスタの製造方法
JPH01302769A (ja) * 1988-05-30 1989-12-06 Seikosha Co Ltd 逆スタガー型シリコン薄膜トランジスタの製造方法
JPH02109341A (ja) * 1988-10-19 1990-04-23 Fuji Xerox Co Ltd 薄膜トランジスタの製造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100701826B1 (ko) * 2006-12-29 2007-03-30 석우엔지니어링 주식회사 공동주택용 전기단자함

Also Published As

Publication number Publication date
JP3412277B2 (ja) 2003-06-03
JPH0864835A (ja) 1996-03-08
KR960009075A (ko) 1996-03-22
TW278249B (cg-RX-API-DMAC10.html) 1996-06-11
US5757028A (en) 1998-05-26

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