KR0167813B1 - 집적회로 장치 제조 방법 및 반도체 구조 제조 방법 - Google Patents

집적회로 장치 제조 방법 및 반도체 구조 제조 방법 Download PDF

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Publication number
KR0167813B1
KR0167813B1 KR1019940034941A KR19940034941A KR0167813B1 KR 0167813 B1 KR0167813 B1 KR 0167813B1 KR 1019940034941 A KR1019940034941 A KR 1019940034941A KR 19940034941 A KR19940034941 A KR 19940034941A KR 0167813 B1 KR0167813 B1 KR 0167813B1
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KR
South Korea
Prior art keywords
trench
oxide
resist layer
layer
deposition
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1019940034941A
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English (en)
Korean (ko)
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KR950021405A (ko
Inventor
칼리 캐롤
루첸 츄 루이스
프란시스 쉐파드 조셉
오구라 세이키
Original Assignee
윌리암 티. 엘리스
인터내셔널 비지네스 머신즈 코포레이션
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Application filed by 윌리암 티. 엘리스, 인터내셔널 비지네스 머신즈 코포레이션 filed Critical 윌리암 티. 엘리스
Publication of KR950021405A publication Critical patent/KR950021405A/ko
Application granted granted Critical
Publication of KR0167813B1 publication Critical patent/KR0167813B1/ko
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Element Separation (AREA)
  • Formation Of Insulating Films (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
KR1019940034941A 1993-12-23 1994-12-19 집적회로 장치 제조 방법 및 반도체 구조 제조 방법 Expired - Fee Related KR0167813B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US17339693A 1993-12-23 1993-12-23
US08/173,396 1993-12-23
US8/173,396 1993-12-23

Publications (2)

Publication Number Publication Date
KR950021405A KR950021405A (ko) 1995-07-26
KR0167813B1 true KR0167813B1 (ko) 1999-02-01

Family

ID=22631817

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019940034941A Expired - Fee Related KR0167813B1 (ko) 1993-12-23 1994-12-19 집적회로 장치 제조 방법 및 반도체 구조 제조 방법

Country Status (7)

Country Link
US (1) US5516721A (enExample)
EP (1) EP0660390A3 (enExample)
JP (1) JP2804446B2 (enExample)
KR (1) KR0167813B1 (enExample)
BR (1) BR9405158A (enExample)
CA (1) CA2131668C (enExample)
TW (1) TW265457B (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
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KR100864845B1 (ko) * 2002-07-03 2008-10-23 매그나칩 반도체 유한회사 반도체소자의 소자분리막 제조방법

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US5770501A (en) * 1995-12-22 1998-06-23 United Microelectronics Corporation Process of fabricating NAND-structure flash EEPROM using liquid phase deposition
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US6013558A (en) * 1997-08-06 2000-01-11 Vlsi Technology, Inc. Silicon-enriched shallow trench oxide for reduced recess during LDD spacer etch
US6455394B1 (en) * 1998-03-13 2002-09-24 Micron Technology, Inc. Method for trench isolation by selective deposition of low temperature oxide films
US6150072A (en) * 1997-08-22 2000-11-21 Siemens Microelectronics, Inc. Method of manufacturing a shallow trench isolation structure for a semiconductor device
US7157385B2 (en) * 2003-09-05 2007-01-02 Micron Technology, Inc. Method of depositing a silicon dioxide-comprising layer in the fabrication of integrated circuitry
US6087243A (en) * 1997-10-21 2000-07-11 Advanced Micro Devices, Inc. Method of forming trench isolation with high integrity, ultra thin gate oxide
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JP3439388B2 (ja) * 1999-07-27 2003-08-25 日本電気株式会社 半導体装置の製造方法
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US6613641B1 (en) * 2001-01-17 2003-09-02 International Business Machines Corporation Production of metal insulator metal (MIM) structures using anodizing process
US6605506B2 (en) * 2001-01-29 2003-08-12 Silicon-Based Technology Corp. Method of fabricating a scalable stacked-gate flash memory device and its high-density memory arrays
US20030049893A1 (en) * 2001-06-08 2003-03-13 Matthew Currie Method for isolating semiconductor devices
EP1428262A2 (en) 2001-09-21 2004-06-16 Amberwave Systems Corporation Semiconductor structures employing strained material layers with defined impurity gradients and methods for fabricating same
WO2003028106A2 (en) * 2001-09-24 2003-04-03 Amberwave Systems Corporation Rf circuits including transistors having strained material layers
US7060633B2 (en) * 2002-03-29 2006-06-13 Texas Instruments Incorporated Planarization for integrated circuits
US6593221B1 (en) * 2002-08-13 2003-07-15 Micron Technology, Inc. Selective passivation of exposed silicon
CN100437970C (zh) 2003-03-07 2008-11-26 琥珀波系统公司 一种结构及用于形成半导体结构的方法
US6767786B1 (en) * 2003-04-14 2004-07-27 Nanya Technology Corporation Method for forming bottle trenches by liquid phase oxide deposition
TWI222180B (en) * 2003-04-29 2004-10-11 Nanya Technology Corp Method for forming vertical transistor and trench capacitor
US7125815B2 (en) * 2003-07-07 2006-10-24 Micron Technology, Inc. Methods of forming a phosphorous doped silicon dioxide comprising layer
US7273794B2 (en) * 2003-12-11 2007-09-25 International Business Machines Corporation Shallow trench isolation fill by liquid phase deposition of SiO2
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US7074690B1 (en) * 2004-03-25 2006-07-11 Novellus Systems, Inc. Selective gap-fill process
US9257302B1 (en) 2004-03-25 2016-02-09 Novellus Systems, Inc. CVD flowable gap fill
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US7510966B2 (en) * 2005-03-07 2009-03-31 Micron Technology, Inc. Electrically conductive line, method of forming an electrically conductive line, and method of reducing titanium silicide agglomeration in fabrication of titanium silicide over polysilicon transistor gate lines
US8012847B2 (en) 2005-04-01 2011-09-06 Micron Technology, Inc. Methods of forming trench isolation in the fabrication of integrated circuitry and methods of fabricating integrated circuitry
US7482215B2 (en) 2006-08-30 2009-01-27 International Business Machines Corporation Self-aligned dual segment liner and method of manufacturing the same
US7888273B1 (en) 2006-11-01 2011-02-15 Novellus Systems, Inc. Density gradient-free gap fill
US9245739B2 (en) 2006-11-01 2016-01-26 Lam Research Corporation Low-K oxide deposition by hydrolysis and condensation
US7795605B2 (en) * 2007-06-29 2010-09-14 International Business Machines Corporation Phase change material based temperature sensor
US20090072355A1 (en) * 2007-09-17 2009-03-19 International Business Machines Corporation Dual shallow trench isolation structure
CN101452873B (zh) * 2007-12-06 2010-08-11 上海华虹Nec电子有限公司 浅沟槽隔离工艺方法
US8557712B1 (en) 2008-12-15 2013-10-15 Novellus Systems, Inc. PECVD flowable dielectric gap fill
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Cited By (1)

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Publication number Priority date Publication date Assignee Title
KR100864845B1 (ko) * 2002-07-03 2008-10-23 매그나칩 반도체 유한회사 반도체소자의 소자분리막 제조방법

Also Published As

Publication number Publication date
US5516721A (en) 1996-05-14
KR950021405A (ko) 1995-07-26
CA2131668A1 (en) 1995-06-24
EP0660390A3 (en) 1997-07-09
JPH07201979A (ja) 1995-08-04
CA2131668C (en) 1999-03-02
EP0660390A2 (en) 1995-06-28
TW265457B (enExample) 1995-12-11
JP2804446B2 (ja) 1998-09-24
BR9405158A (pt) 1995-08-01

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