KR0165856B1 - 침착 터널링 산화물의 제조방법 - Google Patents
침착 터널링 산화물의 제조방법 Download PDFInfo
- Publication number
- KR0165856B1 KR0165856B1 KR1019900700109A KR900700109A KR0165856B1 KR 0165856 B1 KR0165856 B1 KR 0165856B1 KR 1019900700109 A KR1019900700109 A KR 1019900700109A KR 900700109 A KR900700109 A KR 900700109A KR 0165856 B1 KR0165856 B1 KR 0165856B1
- Authority
- KR
- South Korea
- Prior art keywords
- layer
- tunneling
- silicon dioxide
- dioxide layer
- forming
- Prior art date
Links
- 230000005641 tunneling Effects 0.000 title claims description 60
- 238000000034 method Methods 0.000 title claims description 51
- 238000004519 manufacturing process Methods 0.000 title claims description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 58
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 30
- 229920005591 polysilicon Polymers 0.000 claims description 30
- 235000012239 silicon dioxide Nutrition 0.000 claims description 29
- 239000000377 silicon dioxide Substances 0.000 claims description 29
- 238000000151 deposition Methods 0.000 claims description 23
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 claims description 22
- 238000000137 annealing Methods 0.000 claims description 16
- 230000007547 defect Effects 0.000 claims description 10
- 238000004518 low pressure chemical vapour deposition Methods 0.000 claims description 9
- 239000011261 inert gas Substances 0.000 claims description 8
- 239000000203 mixture Substances 0.000 claims description 8
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 6
- 239000007789 gas Substances 0.000 claims description 4
- 229910052786 argon Inorganic materials 0.000 claims description 3
- 239000004020 conductor Substances 0.000 claims description 3
- 239000012299 nitrogen atmosphere Substances 0.000 claims description 2
- 239000004065 semiconductor Substances 0.000 claims description 2
- 238000005530 etching Methods 0.000 claims 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims 2
- 229910052757 nitrogen Inorganic materials 0.000 claims 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 10
- 229910052710 silicon Inorganic materials 0.000 description 10
- 239000010703 silicon Substances 0.000 description 10
- 230000008021 deposition Effects 0.000 description 9
- 229910004298 SiO 2 Inorganic materials 0.000 description 6
- 230000003647 oxidation Effects 0.000 description 5
- 238000007254 oxidation reaction Methods 0.000 description 5
- 230000015556 catabolic process Effects 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 230000035882 stress Effects 0.000 description 4
- 239000000758 substrate Substances 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 230000001788 irregular Effects 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 238000000280 densification Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 230000002028 premature Effects 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66825—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a floating gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/401—Multistep manufacturing processes
- H01L29/4011—Multistep manufacturing processes for data storage electrodes
- H01L29/40114—Multistep manufacturing processes for data storage electrodes the electrodes comprising a conductor-insulator-conductor-insulator-semiconductor structure
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Non-Volatile Memory (AREA)
- Formation Of Insulating Films (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US19576688A | 1988-05-17 | 1988-05-17 | |
| US195,766 | 1988-05-17 | ||
| PCT/US1989/002111 WO1989011731A1 (fr) | 1988-05-17 | 1989-05-16 | Depot d'oxyde a effet tunnel |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR900702567A KR900702567A (ko) | 1990-12-07 |
| KR0165856B1 true KR0165856B1 (ko) | 1999-02-01 |
Family
ID=22722714
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1019900700109A KR0165856B1 (ko) | 1988-05-17 | 1989-05-16 | 침착 터널링 산화물의 제조방법 |
Country Status (4)
| Country | Link |
|---|---|
| EP (1) | EP0417197A4 (fr) |
| JP (1) | JP2703638B2 (fr) |
| KR (1) | KR0165856B1 (fr) |
| WO (1) | WO1989011731A1 (fr) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07101713B2 (ja) * | 1988-06-07 | 1995-11-01 | 三菱電機株式会社 | 半導体記憶装置の製造方法 |
| US5153691A (en) * | 1989-06-21 | 1992-10-06 | Xicor, Inc. | Apparatus for a dual thickness floating gate memory cell |
| US5593494A (en) * | 1995-03-14 | 1997-01-14 | Memc Electronic Materials, Inc. | Precision controlled precipitation of oxygen in silicon |
| JP3245136B2 (ja) * | 1999-09-01 | 2002-01-07 | キヤノン販売株式会社 | 絶縁膜の膜質改善方法 |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3934060A (en) * | 1973-12-19 | 1976-01-20 | Motorola, Inc. | Method for forming a deposited silicon dioxide layer on a semiconductor wafer |
| US4613956A (en) * | 1983-02-23 | 1986-09-23 | Texas Instruments Incorporated | Floating gate memory with improved dielectric |
| JPS60148168A (ja) * | 1984-01-13 | 1985-08-05 | Seiko Instr & Electronics Ltd | 半導体不揮発性メモリ |
| US4526631A (en) * | 1984-06-25 | 1985-07-02 | International Business Machines Corporation | Method for forming a void free isolation pattern utilizing etch and refill techniques |
| JPS61136274A (ja) * | 1984-12-07 | 1986-06-24 | Toshiba Corp | 半導体装置 |
| US4763177A (en) * | 1985-02-19 | 1988-08-09 | Texas Instruments Incorporated | Read only memory with improved channel length isolation and method of forming |
| US4713677A (en) * | 1985-02-28 | 1987-12-15 | Texas Instruments Incorporated | Electrically erasable programmable read only memory cell including trench capacitor |
| US4599706A (en) * | 1985-05-14 | 1986-07-08 | Xicor, Inc. | Nonvolatile electrically alterable memory |
-
1989
- 1989-05-16 EP EP19890907002 patent/EP0417197A4/en not_active Ceased
- 1989-05-16 KR KR1019900700109A patent/KR0165856B1/ko not_active IP Right Cessation
- 1989-05-16 JP JP1506338A patent/JP2703638B2/ja not_active Expired - Lifetime
- 1989-05-16 WO PCT/US1989/002111 patent/WO1989011731A1/fr not_active Application Discontinuation
Also Published As
| Publication number | Publication date |
|---|---|
| JPH03505145A (ja) | 1991-11-07 |
| EP0417197A1 (fr) | 1991-03-20 |
| KR900702567A (ko) | 1990-12-07 |
| JP2703638B2 (ja) | 1998-01-26 |
| WO1989011731A1 (fr) | 1989-11-30 |
| EP0417197A4 (en) | 1992-07-08 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A201 | Request for examination | ||
| E902 | Notification of reason for refusal | ||
| E701 | Decision to grant or registration of patent right | ||
| GRNT | Written decision to grant | ||
| FPAY | Annual fee payment |
Payment date: 20080917 Year of fee payment: 11 |
|
| LAPS | Lapse due to unpaid annual fee |