KR0127277B1 - 배선기판상의 배선표면 처리방법 - Google Patents

배선기판상의 배선표면 처리방법

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Publication number
KR0127277B1
KR0127277B1 KR1019930015341A KR930015341A KR0127277B1 KR 0127277 B1 KR0127277 B1 KR 0127277B1 KR 1019930015341 A KR1019930015341 A KR 1019930015341A KR 930015341 A KR930015341 A KR 930015341A KR 0127277 B1 KR0127277 B1 KR 0127277B1
Authority
KR
South Korea
Prior art keywords
layer
wiring
bonding
solder
semiconductor element
Prior art date
Application number
KR1019930015341A
Other languages
English (en)
Other versions
KR940005200A (ko
Inventor
유끼야스 미야자끼
노부요시 스기따니
요시아끼 시모죠
Original Assignee
이소가이 찌세이
가부시끼가이샤 도요다지도쇽끼 세이사꾸쇼
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 이소가이 찌세이, 가부시끼가이샤 도요다지도쇽끼 세이사꾸쇼 filed Critical 이소가이 찌세이
Publication of KR940005200A publication Critical patent/KR940005200A/ko
Application granted granted Critical
Publication of KR0127277B1 publication Critical patent/KR0127277B1/ko

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    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49866—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers characterised by the materials
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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
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  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
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  • Ceramic Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Dispersion Chemistry (AREA)
  • Manufacturing Of Printed Wiring (AREA)
  • Wire Bonding (AREA)
  • Parts Printed On Printed Circuit Boards (AREA)
  • Electric Connection Of Electric Components To Printed Circuits (AREA)

Abstract

(목적) A1 본딩 와이어와의 접합성이 양호한 것에 덧붙여 용융연질 땜납 접촉성 및 땜납부착성이 양호하고 상기 땜납 부착성이 히이트사이클의 반복에 의해서도 저하되지 않는 배선기판상의 배선표면처리방법을 제공한다.
(구성) 세라믹 적층기판(1)상에는 W에 의한 배선층(2)이 형성되어 있다. Ni-B합금층(10)사에는 Ag페이스트나 연질 땜납 등에 의한 납재 또는 에폭시 수지등의 접착제에 의한 접합층(5)을 거쳐서 반도체 소자(베어칩)(6)가 펠렛 본딩되어 있다. 또, ni-B합금층(10)과 반도체 소자(6)를 A1 본딩 와외어(9)에 의해서 와이어 본딩하므로서 칩 부품(8)과 반도체 소자(6)를 전기적으로 접속하고 있다.

Description

배선기판상의 배선표면 처리방법
제 1도는 본 발명을 구체화한 1실시예의 배선기판상의 배선표면 처리방법을 모식적으로 도시하는 요부 단면도.
제 2도는 종래의 배선기판상의 배선표면 처리방법을 모식적으로 도시하는 요부 단면도.
* 도면의 주요부분에 대한 부호의 설명
1 : 배선기판으로서의 세라믹의 적층기판 2 : W에 의한 배선층
10 : B를 함유하는 Ni 합금층 7 : 땜납
9 : A1 : 본딩 와이어
산업상의 이용분야
본 발명은 배선기판상의 배선표면 처리방법, 상세하게는 반도체 소자(베어칩) 및 각종 표면 실장 부품(칩부품)을 실장하는 배선기판상의 배선표면 처리방법에 관한 것이다.
종래의 기술
제 2도는 종래의 배선기판상의 배선표면 처리방법을 모식적으로 도시하는 요부 단면도이다.
세라믹 적층기판(1)상에는 W(tungsten)에 의한 배선층(2)이 형성되어 있다. 또한, 세라믹 적층기판(1)의 재질로서는 알루미나, PZT(납, 지르코니아 및 티나늄을 주성분으로 한것), 멀라이트, 질화 알루미늄 등이 사용된다. 또, 배선층(2)은 스크린 인쇄(W를 포함하는 페이스트를 세라믹 적층기판(1)상에 도표하므로서 배선 패선을 그린다)를 실시한 후에 소성 형성된다.
상기 배선층(2)상에는 전기 도금법 또는 무전해 도금법 또는 스퍼터법이나 증착법 등에 의해서 바탕층으로의 Ni층(3)이 형성되어 있다.
상기 Ni층(3)상에는 전기도금법 또는 무전해 도금법 또는 스퍼터법이나 증착법 등에 의해서 Au층(4)이 형성되어 있다. Au층(4)상에는 Ag페이스트나 연질 땜납 등에 의한 납재 또는 에폭시 수지 등의 접착제에 의한 접합층(5)을 거쳐서 반도체 소자(베어칩)(6)가 펠렛 본딩되어 있다. 또 Au층(4)상에는 연질 땜납(7)에 의해 칩 부품(8)이 접합되어 있다. 그리고,칩부품(8)이 접합되어 있는 Au층(4)과 반도체 소자(6)를 A1 본딩와이어(9)에 의해서 와이어 본딩하므로서 칩 부품 (8)과 반도체 소자(6)를 전기적으로 접혹하고 있다.
여기에서, 배선층(2)상에 Ni층(3)을 설치하는 이유는 배선층(2)의 W에 직접 핀등을 납땜할 수 없기 때문이다. 또, Ni층(3)상에 또한 Au층(4)을 설치하는 이유는 Ni층(3) 단일체일 경우 그 표면에 견고한 산회막이 형성되기 때문이다. 즉, Ni층(3)에 직접 연질 땜납(7)에 의해서 칩 부품(8)을 접합하는 경우, Ni층(3) 표면의 산화막에 의해서 용융 연질 땜납 접촉성 및 납땜성이 저하되므로 작업효율이 저하되는 동시에 Ni층(3)과 연질 땜납(7)이 충분한 접합 강도를 얻을 수 없다. 또, Ni층(3)에 직접 A1 본딩 와외어(9)에 의해서 와외어 본딩하는 경우, Ni층(3) 표면의 산화막에 의해서 A1 본딩 와이어(9)와 Ni 층(3)을 접합시킬 수 없다. 그것이 A1 본딩 와외어(9)와의 접합성 및 용융 연질 땜납 접촉성이 모두 양호한, 상부가 산화되지 않은 Au층(4)을 Ni층(3)상에 형성시키고 있는 이유이다.
발명이 해결하려는 과제
그러나, Au층(4)은 용융 연질 땜납 접촉성은 양호하나 납땜성이 나쁘다는 문제가 있다. 즉, Au는 용융 연질 땜납에 용해되기 쉬우므로 Au층(4)상에 연질 땜납(7)을 부착할때, Au층(4) 표면과 연질 땜납(7)과의 계면에 있어서 깊은 범위에서 연질 땜납중의 Su 및 Pb와 Au가 복잡한 금속간 화합물을 형성하고 만다.
그같은 금속간 화합물 층은 기계적 강도가 낮고 저항력이 약한 여러가지 온도 조건에 대한 내구성, 그중에도 저온과 고온을 번갈아 반복한는 소위 히이트 사이클에 대한 내구성이 낮다는 성질이 있다. 그 때문에 히이트사이클 시험을 하면 발생응력에 의해서 상기 금속간 화합물층에 균열이 발생되고 배선저항이 증가하거나 최악의 경우는 Au층(4)과 땜납(7)이 박리되어 칩 부품(8)이 탈락하는 수가 있었다.
본 발명은 상기 문제점을 해결하기 위해 이뤄진 것이며 그목적은 A1 본딩 와이어와의 접합성이 양호함과 동시에 용융 연질 땜납 접촉성 및 땜납 부착성이 양호하고 그 땜납 부착성이 히이트사이클의 반복에 의해서도 저하되지 않는 배선기판상의 배선표면 처리방법을 제공하는데 있다.
과제를 해결하기 위한 수단
본 발명은 상기 문제점을 해결하기 위해거 배선기판상에 W(tungsten) 또는 Cu (copper) 및 그 합금으로 되는 배선을 형성하고 그 배선의 표면에 B(boron)를 함유하는 Ni(nickel) 합금청을 피막으로서 형성하고 그 Ni 합금층에 대해서 납땜 및 A1(aluminum) 본딩 와이어를 와이어 본딩하는 것을 그 요지로 한다.
작용
B를 함유하는 Ni합금층은 A1 본딩 와이어와의 접합성이 양호하다는 것에 덧붙여 용유 접촉성 및 납땜성이 양호하고 땜납과의 사이에 금속간 화합물을 거의 형성하지 않는다는 성질이 있다. 그 때문에 히이트사이클의 반복에 의해서도 B를 함유하는 Ni합금층과 땜납과의 접합강도는 거의 저하되지 않는다.
실시예
이하, 본 발명을 구체화한 1실시예를 제 1도에 의해 설명한다.
제 1도는 본 실시예의 배선기판상의 배선표면 처리방법을 모식적으로 도시하는 요부 단면도이다. 또한, 본 실시예에 있어서 제 2도에 도시한 종래예와 같은 구성에 대해서는 부호를 같게 하고 그 상세한 설명을 생략한다.
세라믹 적층기판(1)상에는 종래예와 마찬가지로 W에 의한 배선층(2)이 형성되어 있다. 상기 배선층(2)상에는 B를 함유하는 Ni합금에 의한 Ni-B합금층(10)이 형성되어 있다. 그리고 Ni-B합금층(10)상에는 종래예와 마찬가지로 접합층(5)을 거쳐서 반도체 소자(베어칩)(6)가 펠렛 본딩되어 있다. 그리고 칩부품(8)이 접합되어 있는 Ni-B합금층(10)과 반도체 소자(6)를 A1 본딩 와이어(9)에 의해서 와이어 본딩하므로서 칩 부품(8)과 반도체 소자(6)를 전기적으로 접속하고 있다.
즉, 종래예에서의 Ni층(3)과 Au층(4)을 Ni-B합금층(10)으로 바꿔놓은 것만이 본 실시예와 종래예와의 차이다.
상기 Ni-B합금층(10)에서의 B의 함유량은 약 1중량%이며 전기도금법 또는 무전해도금법 또는 스퍼터법이나 증착법 등, 어떤 방법에 의해서 형성해도 좋으나 그 막두께는 5㎛ 이상이어야 한다.
상기 B를 함유하는 Ni합금은 Ni와 마찬가지로 우수한 녹방지 효과를 갖고 있다. 그 때문에 배선층(2)상에 Ni-B합금층(10)을 형성하므로서 종래예와 같이 배선층(2)의 W산화를 방지할 수 있다.
또, B를 함유하는 Ni합금은 용융 연질 납땜 접촉성이 양호한 이에 용융 연질 땜납으로의 용해 속도가 Au의 약 1/1000이라는 성질을 갖고 있다. 그 때문에 Ni-B합금층(10)상에 땜납(7)을 붙일 때, Ni-B합금층(10)표면과 연질 땜납(7)과의 계면에서 연질 땜납중의 Sn 및 Pb와 Ni 및 B는 거의 금속간 화합물을 형성하지 않는다. 따라서, Ni-합금층(10)과 연질 땜납(7)과의 접합 강도 즉, Ni-B합금층(10)의 납땜성은 히이트사이클의 반복에 대해서 거의 저하되지 않는다.
또한, Ni중에 B를 함유시키므로서 Ni의 산회가 억제되므로 Ni-B합금층(10)의 막두께를 5㎛ 이상으로 하면 A1 본딩 와이어(9)와 Ni-B합금층(10)과의 접합성을 충분히 확보할 수 있다. 단, Au 본딩 와이어와 Ni-B합금층(10)은 접합하지 않기 때문에 A1본딩 와이어(9) 대신에 Au 본딩 와이어를 사용할 수 있다.
이와 같은 실시예에 있어서는, 종래예의 Ni층(3)과 Au층(4)을 Ni-B합금층(10)으로 치환시키는 간단한 변경만으로도 종래예와 마찬가지로 효과를 얻는 외에 종래예의 결점인 납땜성의 나쁨을 극복할 수 있다. 또, 세라믹 적층기판(1)을 어떤 배선기판(예컨대, 페놀수지, 에폭시 수지, 폴리아미드 수지등과 종이, 유리섬유 등으로 이루어진 프린트 기판이나 플렉시블기판 등)으로 치환하여도 좋다.
이상, 상세히 기술한 대로 본 발명의 배선기판상의 배선표면 처리방법에 의하면 A1 본딩 와이어와의 접합성이 양호함과 동시에 용융 연질 땜납 접촉성 및 납땜성이 양호하고 그 납땜성이 히이트사이클의 반복에 의해서도 저하되지 않는다는 우수한 효과가 있다.

Claims (1)

  1. 텅스텐 또는 동 및 그의 합금으로 이루어진 배선이 형성되는 배선기판에 대하여 납땜부 및 알루미늄 본딩 와이어를 본딩하는 배선기판상의 배선표면 처리방법에 있어서, 상기 배선의 표면에 붕소를 약 1중량% 함유하는 니켈 합금층을 5㎛ 이상의 피막 두께로 형성하고, 상기 니켈 합금층에 대하여 납땜부 및 알루미늄 본딩 와이어를 와이어 본딩하는 것을 특징으로 하는 배선기판상의 배선표면 처리방법.
KR1019930015341A 1992-08-20 1993-08-17 배선기판상의 배선표면 처리방법 KR0127277B1 (ko)

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JP04-221824 1992-08-20
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JP3435484B2 (ja) * 1995-06-08 2003-08-11 日本特殊陶業株式会社 セラミック基板及びその製造方法
JPH1050751A (ja) * 1996-07-30 1998-02-20 Kyocera Corp ワイヤボンディング細線の接合方法
JP2005057132A (ja) * 2003-08-06 2005-03-03 Fcm Kk 回路基板およびそれを含むことを特徴とする製品
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US4077854A (en) * 1972-10-02 1978-03-07 The Bendix Corporation Method of manufacture of solderable thin film microcircuit with stabilized resistive films
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JPH0634442B2 (ja) * 1986-11-25 1994-05-02 株式会社日立製作所 ムライト配線基板の製造方法
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