JPWO2024134788A5 - - Google Patents

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Publication number
JPWO2024134788A5
JPWO2024134788A5 JP2023523656A JP2023523656A JPWO2024134788A5 JP WO2024134788 A5 JPWO2024134788 A5 JP WO2024134788A5 JP 2023523656 A JP2023523656 A JP 2023523656A JP 2023523656 A JP2023523656 A JP 2023523656A JP WO2024134788 A5 JPWO2024134788 A5 JP WO2024134788A5
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JP
Japan
Prior art keywords
layer
region
type electrode
contact
semiconductor substrate
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Pending
Application number
JP2023523656A
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English (en)
Japanese (ja)
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JPWO2024134788A1 (https=
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Priority claimed from PCT/JP2022/046950 external-priority patent/WO2024134788A1/ja
Publication of JPWO2024134788A1 publication Critical patent/JPWO2024134788A1/ja
Publication of JPWO2024134788A5 publication Critical patent/JPWO2024134788A5/ja
Pending legal-status Critical Current

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JP2023523656A 2022-12-20 2022-12-20 Pending JPWO2024134788A1 (https=)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2022/046950 WO2024134788A1 (ja) 2022-12-20 2022-12-20 半導体光素子

Publications (2)

Publication Number Publication Date
JPWO2024134788A1 JPWO2024134788A1 (https=) 2024-06-27
JPWO2024134788A5 true JPWO2024134788A5 (https=) 2024-11-19

Family

ID=91588080

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2023523656A Pending JPWO2024134788A1 (https=) 2022-12-20 2022-12-20

Country Status (2)

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JP (1) JPWO2024134788A1 (https=)
WO (1) WO2024134788A1 (https=)

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58116259U (ja) * 1982-01-29 1983-08-08 日本電気株式会社 半導体レ−ザ
JPH0614573B2 (ja) * 1985-02-25 1994-02-23 日本電信電話株式会社 半導体レ−ザ
JPS6254992A (ja) * 1985-09-03 1987-03-10 Nec Corp 半導体レ−ザ
JPS6490583A (en) * 1987-10-01 1989-04-07 Sumitomo Electric Industries Semiconductor laser element
JPH02130984A (ja) * 1988-11-11 1990-05-18 Nec Corp 半導体レーザ装置
JP3230785B2 (ja) * 1993-11-11 2001-11-19 日本電信電話株式会社 半導体レーザおよびその製造方法
JP2870632B2 (ja) * 1995-07-13 1999-03-17 日本電気株式会社 半導体光集積回路およびその製造方法
JPH0997946A (ja) * 1995-07-21 1997-04-08 Matsushita Electric Ind Co Ltd 半導体レーザ及びその製造方法
JP4422597B2 (ja) * 2004-12-02 2010-02-24 富士通株式会社 半導体レーザ及びその製造方法
JP5691741B2 (ja) * 2011-03-30 2015-04-01 富士通株式会社 光半導体素子及びその製造方法
JP6623073B2 (ja) * 2016-02-10 2019-12-18 古河電気工業株式会社 光導波路構造、光集積素子、および光導波路構造の製造方法
US20230327405A1 (en) * 2020-11-06 2023-10-12 Mitsubishi Electric Corporation Optical semiconductor device

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