JPWO2024134788A1 - - Google Patents
Info
- Publication number
- JPWO2024134788A1 JPWO2024134788A1 JP2023523656A JP2023523656A JPWO2024134788A1 JP WO2024134788 A1 JPWO2024134788 A1 JP WO2024134788A1 JP 2023523656 A JP2023523656 A JP 2023523656A JP 2023523656 A JP2023523656 A JP 2023523656A JP WO2024134788 A1 JPWO2024134788 A1 JP WO2024134788A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/042—Electrical excitation ; Circuits therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/227—Buried mesa structure ; Striped active layer
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Geometry (AREA)
- Semiconductor Lasers (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/JP2022/046950 WO2024134788A1 (ja) | 2022-12-20 | 2022-12-20 | 半導体光素子 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPWO2024134788A1 true JPWO2024134788A1 (https=) | 2024-06-27 |
| JPWO2024134788A5 JPWO2024134788A5 (https=) | 2024-11-19 |
Family
ID=91588080
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2023523656A Pending JPWO2024134788A1 (https=) | 2022-12-20 | 2022-12-20 |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JPWO2024134788A1 (https=) |
| WO (1) | WO2024134788A1 (https=) |
Citations (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58116259U (ja) * | 1982-01-29 | 1983-08-08 | 日本電気株式会社 | 半導体レ−ザ |
| JPS61196591A (ja) * | 1985-02-25 | 1986-08-30 | Nippon Telegr & Teleph Corp <Ntt> | 半導体レ−ザ |
| JPS6254992A (ja) * | 1985-09-03 | 1987-03-10 | Nec Corp | 半導体レ−ザ |
| JPS6490583A (en) * | 1987-10-01 | 1989-04-07 | Sumitomo Electric Industries | Semiconductor laser element |
| JPH02130984A (ja) * | 1988-11-11 | 1990-05-18 | Nec Corp | 半導体レーザ装置 |
| JPH07135369A (ja) * | 1993-11-11 | 1995-05-23 | Nippon Telegr & Teleph Corp <Ntt> | 半導体レーザおよびその製造方法 |
| JPH0927658A (ja) * | 1995-07-13 | 1997-01-28 | Nec Corp | 半導体光集積回路およびその製造方法 |
| JPH0997946A (ja) * | 1995-07-21 | 1997-04-08 | Matsushita Electric Ind Co Ltd | 半導体レーザ及びその製造方法 |
| JP2006165027A (ja) * | 2004-12-02 | 2006-06-22 | Fujitsu Ltd | 半導体レーザ及びその製造方法 |
| JP2012209489A (ja) * | 2011-03-30 | 2012-10-25 | Fujitsu Ltd | 光半導体素子及びその製造方法 |
| JP2017142348A (ja) * | 2016-02-10 | 2017-08-17 | 古河電気工業株式会社 | 光導波路構造、光集積素子、および光導波路構造の製造方法 |
| WO2022097258A1 (ja) * | 2020-11-06 | 2022-05-12 | 三菱電機株式会社 | 光半導体装置およびその製造方法 |
-
2022
- 2022-12-20 WO PCT/JP2022/046950 patent/WO2024134788A1/ja not_active Ceased
- 2022-12-20 JP JP2023523656A patent/JPWO2024134788A1/ja active Pending
Patent Citations (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58116259U (ja) * | 1982-01-29 | 1983-08-08 | 日本電気株式会社 | 半導体レ−ザ |
| JPS61196591A (ja) * | 1985-02-25 | 1986-08-30 | Nippon Telegr & Teleph Corp <Ntt> | 半導体レ−ザ |
| JPS6254992A (ja) * | 1985-09-03 | 1987-03-10 | Nec Corp | 半導体レ−ザ |
| JPS6490583A (en) * | 1987-10-01 | 1989-04-07 | Sumitomo Electric Industries | Semiconductor laser element |
| JPH02130984A (ja) * | 1988-11-11 | 1990-05-18 | Nec Corp | 半導体レーザ装置 |
| JPH07135369A (ja) * | 1993-11-11 | 1995-05-23 | Nippon Telegr & Teleph Corp <Ntt> | 半導体レーザおよびその製造方法 |
| JPH0927658A (ja) * | 1995-07-13 | 1997-01-28 | Nec Corp | 半導体光集積回路およびその製造方法 |
| JPH0997946A (ja) * | 1995-07-21 | 1997-04-08 | Matsushita Electric Ind Co Ltd | 半導体レーザ及びその製造方法 |
| JP2006165027A (ja) * | 2004-12-02 | 2006-06-22 | Fujitsu Ltd | 半導体レーザ及びその製造方法 |
| JP2012209489A (ja) * | 2011-03-30 | 2012-10-25 | Fujitsu Ltd | 光半導体素子及びその製造方法 |
| JP2017142348A (ja) * | 2016-02-10 | 2017-08-17 | 古河電気工業株式会社 | 光導波路構造、光集積素子、および光導波路構造の製造方法 |
| WO2022097258A1 (ja) * | 2020-11-06 | 2022-05-12 | 三菱電機株式会社 | 光半導体装置およびその製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2024134788A1 (ja) | 2024-06-27 |
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