JPWO2023203894A5 - - Google Patents
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- Publication number
- JPWO2023203894A5 JPWO2023203894A5 JP2024516119A JP2024516119A JPWO2023203894A5 JP WO2023203894 A5 JPWO2023203894 A5 JP WO2023203894A5 JP 2024516119 A JP2024516119 A JP 2024516119A JP 2024516119 A JP2024516119 A JP 2024516119A JP WO2023203894 A5 JPWO2023203894 A5 JP WO2023203894A5
- Authority
- JP
- Japan
- Prior art keywords
- trench
- floating
- protection
- insulating layer
- outer periphery
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2022070179 | 2022-04-21 | ||
| PCT/JP2023/008033 WO2023203894A1 (ja) | 2022-04-21 | 2023-03-03 | 半導体装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPWO2023203894A1 JPWO2023203894A1 (https=) | 2023-10-26 |
| JPWO2023203894A5 true JPWO2023203894A5 (https=) | 2025-01-07 |
Family
ID=88419774
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2024516119A Pending JPWO2023203894A1 (https=) | 2022-04-21 | 2023-03-03 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US20250040223A1 (https=) |
| JP (1) | JPWO2023203894A1 (https=) |
| CN (1) | CN119054085A (https=) |
| WO (1) | WO2023203894A1 (https=) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2025173150A1 (ja) * | 2024-02-15 | 2025-08-21 | 三菱電機株式会社 | 半導体装置及び半導体装置の製造方法 |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5422930B2 (ja) * | 2008-06-30 | 2014-02-19 | 株式会社デンソー | 半導体装置 |
| US8519477B2 (en) * | 2009-11-20 | 2013-08-27 | Force Mos Technology Co., Ltd. | Trench MOSFET with trenched floating gates and trenched channel stop gates in termination |
| JP2019117867A (ja) * | 2017-12-27 | 2019-07-18 | 株式会社東芝 | 半導体装置 |
| JP7223543B2 (ja) * | 2018-10-05 | 2023-02-16 | ローム株式会社 | 半導体装置 |
| US11004969B2 (en) * | 2019-10-07 | 2021-05-11 | Nami MOS CO., LTD. | Trench MOSFETs having dummy cells for avalanche capability improvement |
-
2023
- 2023-03-03 CN CN202380034667.0A patent/CN119054085A/zh active Pending
- 2023-03-03 WO PCT/JP2023/008033 patent/WO2023203894A1/ja not_active Ceased
- 2023-03-03 JP JP2024516119A patent/JPWO2023203894A1/ja active Pending
-
2024
- 2024-10-17 US US18/918,253 patent/US20250040223A1/en active Pending
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