JPWO2023156877A5 - - Google Patents

Info

Publication number
JPWO2023156877A5
JPWO2023156877A5 JP2024500694A JP2024500694A JPWO2023156877A5 JP WO2023156877 A5 JPWO2023156877 A5 JP WO2023156877A5 JP 2024500694 A JP2024500694 A JP 2024500694A JP 2024500694 A JP2024500694 A JP 2024500694A JP WO2023156877 A5 JPWO2023156877 A5 JP WO2023156877A5
Authority
JP
Japan
Prior art keywords
conductor
insulator
memory cell
contact
transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2024500694A
Other languages
English (en)
Japanese (ja)
Other versions
JPWO2023156877A1 (https=
Filing date
Publication date
Application filed filed Critical
Priority claimed from PCT/IB2023/051027 external-priority patent/WO2023156877A1/ja
Publication of JPWO2023156877A1 publication Critical patent/JPWO2023156877A1/ja
Publication of JPWO2023156877A5 publication Critical patent/JPWO2023156877A5/ja
Pending legal-status Critical Current

Links

JP2024500694A 2022-02-18 2023-02-06 Pending JPWO2023156877A1 (https=)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2022023822 2022-02-18
JP2022035017 2022-03-08
JP2022140309 2022-09-02
PCT/IB2023/051027 WO2023156877A1 (ja) 2022-02-18 2023-02-06 半導体装置

Publications (2)

Publication Number Publication Date
JPWO2023156877A1 JPWO2023156877A1 (https=) 2023-08-24
JPWO2023156877A5 true JPWO2023156877A5 (https=) 2025-11-05

Family

ID=87577683

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2024500694A Pending JPWO2023156877A1 (https=) 2022-02-18 2023-02-06

Country Status (5)

Country Link
US (1) US20250151295A1 (https=)
JP (1) JPWO2023156877A1 (https=)
KR (1) KR20240149947A (https=)
TW (1) TW202343584A (https=)
WO (1) WO2023156877A1 (https=)

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9443872B2 (en) * 2014-03-07 2016-09-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9716100B2 (en) * 2014-03-14 2017-07-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, method for driving semiconductor device, and electronic device
US10460984B2 (en) * 2015-04-15 2019-10-29 Semiconductor Energy Laboratory Co., Ltd. Method for fabricating electrode and semiconductor device
US9564217B1 (en) * 2015-10-19 2017-02-07 United Microelectronics Corp. Semiconductor memory device having integrated DOSRAM and NOSRAM
WO2019021098A1 (en) * 2017-07-26 2019-01-31 Semiconductor Energy Laboratory Co., Ltd. SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
WO2020234689A1 (ja) * 2019-05-23 2020-11-26 株式会社半導体エネルギー研究所 半導体装置
US12464777B2 (en) * 2019-07-26 2025-11-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including metal oxide
CN114424339A (zh) 2019-09-20 2022-04-29 株式会社半导体能源研究所 半导体装置及半导体装置的制造方法

Similar Documents

Publication Publication Date Title
JP2025175092A5 (https=)
JP2023171489A5 (https=)
JP2025175013A5 (ja) 半導体装置
JP2022043102A5 (https=)
JP2024109744A5 (https=)
JP2024020477A5 (https=)
JP2024133231A5 (ja) 半導体装置
JP2025175014A5 (ja) 半導体装置
JP2022002321A5 (https=)
JP2024149589A5 (https=)
JP2019179924A5 (ja) トランジスタ
JP2024150666A5 (https=)
JP2024012439A5 (https=)
JP2025178310A5 (https=)
JP2024012368A5 (https=)
CN105575966A (zh) 具有金属-绝缘体-硅接触件的存储器件和集成电路器件
JP2005191454A5 (https=)
JPWO2021019334A5 (https=)
TW201320307A (zh) 記憶體結構
JPWO2021038361A5 (https=)
JPWO2021024071A5 (https=)
JP2025157370A5 (ja) 半導体装置
JPWO2021191734A5 (https=)
JPWO2023042022A5 (https=)
JPWO2023152595A5 (https=)