JPWO2021191734A5 - - Google Patents
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- Publication number
- JPWO2021191734A5 JPWO2021191734A5 JP2022509749A JP2022509749A JPWO2021191734A5 JP WO2021191734 A5 JPWO2021191734 A5 JP WO2021191734A5 JP 2022509749 A JP2022509749 A JP 2022509749A JP 2022509749 A JP2022509749 A JP 2022509749A JP WO2021191734 A5 JPWO2021191734 A5 JP WO2021191734A5
- Authority
- JP
- Japan
- Prior art keywords
- transistor
- conductor
- layer
- memory cell
- circuit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2025111750A JP2025133834A (ja) | 2020-03-27 | 2025-07-01 | 記憶装置 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2020058397 | 2020-03-27 | ||
| JP2020058397 | 2020-03-27 | ||
| PCT/IB2021/052197 WO2021191734A1 (ja) | 2020-03-27 | 2021-03-17 | 記憶装置、及び電子機器 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2025111750A Division JP2025133834A (ja) | 2020-03-27 | 2025-07-01 | 記憶装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JPWO2021191734A1 JPWO2021191734A1 (https=) | 2021-09-30 |
| JPWO2021191734A5 true JPWO2021191734A5 (https=) | 2024-03-05 |
| JP7706440B2 JP7706440B2 (ja) | 2025-07-11 |
Family
ID=77890994
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2022509749A Active JP7706440B2 (ja) | 2020-03-27 | 2021-03-17 | 記憶装置、及び電子機器 |
| JP2025111750A Pending JP2025133834A (ja) | 2020-03-27 | 2025-07-01 | 記憶装置 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2025111750A Pending JP2025133834A (ja) | 2020-03-27 | 2025-07-01 | 記憶装置 |
Country Status (5)
| Country | Link |
|---|---|
| US (2) | US12477952B2 (https=) |
| JP (2) | JP7706440B2 (https=) |
| KR (1) | KR20220158241A (https=) |
| CN (1) | CN115349169A (https=) |
| WO (1) | WO2021191734A1 (https=) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11910723B2 (en) * | 2019-10-31 | 2024-02-20 | Taiwan Semiconductor Manufacturing Company, Ltd. | Memory device with electrically parallel source lines |
| US12309660B2 (en) * | 2021-05-06 | 2025-05-20 | Universal City Studios Llc | Systems and methods for layered data reporting in an attraction |
| CN116347896B (zh) * | 2023-03-28 | 2023-10-20 | 北京超弦存储器研究院 | 半导体结构、存储器及其制作方法、电子设备 |
| CN118588129B (zh) * | 2024-08-06 | 2024-11-19 | 青岛海存微电子有限公司 | 磁存储结构及磁存储模块 |
Family Cites Families (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4410095B2 (ja) | 2004-12-27 | 2010-02-03 | 株式会社東芝 | 半導体メモリ |
| KR101698193B1 (ko) | 2009-09-15 | 2017-01-19 | 삼성전자주식회사 | 3차원 반도체 메모리 장치 및 그 제조 방법 |
| KR101912223B1 (ko) | 2011-08-16 | 2019-01-04 | 삼성전자주식회사 | 적층 자기 램 장치 및 이를 포함하는 메모리 시스템 |
| US9177872B2 (en) | 2011-09-16 | 2015-11-03 | Micron Technology, Inc. | Memory cells, semiconductor devices, systems including such cells, and methods of fabrication |
| JP5542995B2 (ja) | 2013-07-01 | 2014-07-09 | 株式会社日立製作所 | 半導体装置 |
| US9869716B2 (en) | 2014-02-07 | 2018-01-16 | Semiconductor Energy Laboratory Co., Ltd. | Device comprising programmable logic element |
| US10055232B2 (en) | 2014-02-07 | 2018-08-21 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device comprising memory circuit |
| JP2015228493A (ja) | 2014-05-08 | 2015-12-17 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| US9804719B2 (en) | 2014-10-23 | 2017-10-31 | Semiconductor Energy Laboratory Co., Ltd. | Electronic device |
| US9634097B2 (en) | 2014-11-25 | 2017-04-25 | Sandisk Technologies Llc | 3D NAND with oxide semiconductor channel |
| US9542987B2 (en) | 2015-02-02 | 2017-01-10 | Globalfoundries Singapore Pte. Ltd. | Magnetic memory cells with low switching current density |
| JP6089081B1 (ja) | 2015-09-16 | 2017-03-01 | 株式会社東芝 | 磁気メモリ |
| WO2017146644A1 (en) * | 2016-02-25 | 2017-08-31 | Agency For Science, Technology And Research | Circuit arrangement, method of forming and operating the same |
| KR102367787B1 (ko) * | 2016-06-30 | 2022-02-24 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 반도체 장치의 동작 방법 |
| US10923648B2 (en) * | 2017-01-17 | 2021-02-16 | Agency For Science, Technology And Research | Memory cell, memory array, method of forming and operating memory cell |
| JP2018148157A (ja) | 2017-03-09 | 2018-09-20 | ソニーセミコンダクタソリューションズ株式会社 | 磁気メモリ及び磁気メモリの記録方法 |
| JP7258764B2 (ja) | 2017-10-13 | 2023-04-17 | 株式会社半導体エネルギー研究所 | 記憶装置 |
| US12200934B2 (en) | 2019-09-27 | 2025-01-14 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, storage device, and electronic device |
| JP7595057B2 (ja) | 2020-02-21 | 2024-12-05 | 株式会社半導体エネルギー研究所 | 半導体装置、及び電子機器 |
| JPWO2021181192A1 (https=) | 2020-03-13 | 2021-09-16 |
-
2021
- 2021-03-17 CN CN202180024777.XA patent/CN115349169A/zh active Pending
- 2021-03-17 KR KR1020227034253A patent/KR20220158241A/ko active Pending
- 2021-03-17 WO PCT/IB2021/052197 patent/WO2021191734A1/ja not_active Ceased
- 2021-03-17 JP JP2022509749A patent/JP7706440B2/ja active Active
- 2021-03-17 US US17/911,196 patent/US12477952B2/en active Active
-
2025
- 2025-07-01 JP JP2025111750A patent/JP2025133834A/ja active Pending
- 2025-10-27 US US19/369,677 patent/US20260052909A1/en active Pending
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