JP2002252290A5 - - Google Patents
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- Publication number
- JP2002252290A5 JP2002252290A5 JP2001046260A JP2001046260A JP2002252290A5 JP 2002252290 A5 JP2002252290 A5 JP 2002252290A5 JP 2001046260 A JP2001046260 A JP 2001046260A JP 2001046260 A JP2001046260 A JP 2001046260A JP 2002252290 A5 JP2002252290 A5 JP 2002252290A5
- Authority
- JP
- Japan
- Prior art keywords
- film
- silicon
- memory
- fine particles
- insulating film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 229910052710 silicon Inorganic materials 0.000 description 7
- 239000010703 silicon Substances 0.000 description 7
- 239000010419 fine particle Substances 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 239000004020 conductor Substances 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 229910052814 silicon oxide Inorganic materials 0.000 description 5
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 4
- 229920005591 polysilicon Polymers 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 239000011859 microparticle Substances 0.000 description 1
- 239000011856 silicon-based particle Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 230000005476 size effect Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001046260A JP5016164B2 (ja) | 2001-02-22 | 2001-02-22 | メモリ膜およびその製造方法、並びにメモリ素子、半導体記憶装置、半導体集積回路および携帯電子機器 |
| US10/468,738 US7074676B2 (en) | 2001-02-22 | 2002-02-13 | Memory film, method of manufacturing the memory film, memory element, semiconductor storage device, semiconductor integrated circuit, and portable electronic equipment |
| PCT/JP2002/001185 WO2002067336A1 (en) | 2001-02-22 | 2002-02-13 | Memory film, method of manufacturing the memory film, memory element, semiconductor storage device, semiconductor integrated circuit, and portable electronic equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001046260A JP5016164B2 (ja) | 2001-02-22 | 2001-02-22 | メモリ膜およびその製造方法、並びにメモリ素子、半導体記憶装置、半導体集積回路および携帯電子機器 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2002252290A JP2002252290A (ja) | 2002-09-06 |
| JP2002252290A5 true JP2002252290A5 (https=) | 2008-03-27 |
| JP5016164B2 JP5016164B2 (ja) | 2012-09-05 |
Family
ID=18907919
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2001046260A Expired - Fee Related JP5016164B2 (ja) | 2001-02-22 | 2001-02-22 | メモリ膜およびその製造方法、並びにメモリ素子、半導体記憶装置、半導体集積回路および携帯電子機器 |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US7074676B2 (https=) |
| JP (1) | JP5016164B2 (https=) |
| WO (1) | WO2002067336A1 (https=) |
Families Citing this family (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7462857B2 (en) | 2002-09-19 | 2008-12-09 | Sharp Kabushiki Kaisha | Memory device including resistance-changing function body |
| JP4514087B2 (ja) * | 2002-09-25 | 2010-07-28 | シャープ株式会社 | メモリ膜構造、メモリ素子及びその製造方法、並びに、半導体集積回路及びそれを用いた携帯電子機器 |
| JP4541651B2 (ja) * | 2003-03-13 | 2010-09-08 | シャープ株式会社 | 抵抗変化機能体、メモリおよびその製造方法並びに半導体装置および電子機器 |
| JP4563652B2 (ja) | 2003-03-13 | 2010-10-13 | シャープ株式会社 | メモリ機能体および微粒子形成方法並びにメモリ素子、半導体装置および電子機器 |
| JP2004342881A (ja) * | 2003-05-16 | 2004-12-02 | Sharp Corp | 半導体記憶装置および半導体装置およびｉｃカードおよび携帯電子機器および半導体記憶装置の製造方法 |
| JP2004343014A (ja) * | 2003-05-19 | 2004-12-02 | Sharp Corp | 半導体記憶装置、半導体装置、及びそれらの製造方法、並びに携帯電子機器、並びにｉｃカード |
| JP4620334B2 (ja) * | 2003-05-20 | 2011-01-26 | シャープ株式会社 | 半導体記憶装置、半導体装置及びそれらを備える携帯電子機器、並びにｉｃカード |
| JP4072621B2 (ja) * | 2003-10-23 | 2008-04-09 | 国立大学法人名古屋大学 | シリコンナノ結晶の作製方法及びフローティングゲート型メモリキャパシタ構造の作製方法 |
| JP4359207B2 (ja) | 2004-08-30 | 2009-11-04 | シャープ株式会社 | 微粒子含有体の製造方法 |
| US7588988B2 (en) | 2004-08-31 | 2009-09-15 | Micron Technology, Inc. | Method of forming apparatus having oxide films formed using atomic layer deposition |
| DE102004055929B4 (de) * | 2004-11-19 | 2014-05-22 | Qimonda Ag | Nichtflüchtige Speicherzellen-Anordnung |
| JP4744885B2 (ja) * | 2005-01-18 | 2011-08-10 | 株式会社東芝 | 半導体装置の製造方法 |
| KR100718836B1 (ko) | 2005-07-14 | 2007-05-16 | 삼성전자주식회사 | 불휘발성 메모리 장치의 게이트 구조물 및 이의 제조 방법 |
| US7927948B2 (en) | 2005-07-20 | 2011-04-19 | Micron Technology, Inc. | Devices with nanocrystals and methods of formation |
| US7575978B2 (en) | 2005-08-04 | 2009-08-18 | Micron Technology, Inc. | Method for making conductive nanoparticle charge storage element |
| US7592251B2 (en) | 2005-12-08 | 2009-09-22 | Micron Technology, Inc. | Hafnium tantalum titanium oxide films |
| US7759747B2 (en) | 2006-08-31 | 2010-07-20 | Micron Technology, Inc. | Tantalum aluminum oxynitride high-κ dielectric |
| FR2911598B1 (fr) * | 2007-01-22 | 2009-04-17 | Soitec Silicon On Insulator | Procede de rugosification de surface. |
| US7846793B2 (en) * | 2007-10-03 | 2010-12-07 | Applied Materials, Inc. | Plasma surface treatment for SI and metal nanocrystal nucleation |
| JP5123830B2 (ja) * | 2008-11-26 | 2013-01-23 | ルネサスエレクトロニクス株式会社 | 反射防止膜、反射防止膜の製造方法、及び反射防止膜を用いた半導体装置 |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4870470A (en) * | 1987-10-16 | 1989-09-26 | International Business Machines Corporation | Non-volatile memory cell having Si rich silicon nitride charge trapping layer |
| JP3727449B2 (ja) * | 1997-09-30 | 2005-12-14 | シャープ株式会社 | 半導体ナノ結晶の製造方法 |
| FR2772989B1 (fr) * | 1997-12-19 | 2003-06-06 | Commissariat Energie Atomique | Dispositif de memoire multiniveaux a blocage de coulomb, procede de fabrication et procede de lecture/ecriture/ effacement d'un tel dispositif |
| KR100271211B1 (ko) * | 1998-07-15 | 2000-12-01 | 윤덕용 | 나노결정을 이용한 비휘발성 기억소자 형성방법 |
| US6548825B1 (en) * | 1999-06-04 | 2003-04-15 | Matsushita Electric Industrial Co., Ltd. | Semiconductor device including barrier layer having dispersed particles |
| JP2001024075A (ja) * | 1999-07-13 | 2001-01-26 | Sony Corp | 不揮発性半導体記憶装置及びその書き込み方法 |
-
2001
- 2001-02-22 JP JP2001046260A patent/JP5016164B2/ja not_active Expired - Fee Related
-
2002
- 2002-02-13 WO PCT/JP2002/001185 patent/WO2002067336A1/ja not_active Ceased
- 2002-02-13 US US10/468,738 patent/US7074676B2/en not_active Expired - Fee Related
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