JP5016164B2 - メモリ膜およびその製造方法、並びにメモリ素子、半導体記憶装置、半導体集積回路および携帯電子機器 - Google Patents

メモリ膜およびその製造方法、並びにメモリ素子、半導体記憶装置、半導体集積回路および携帯電子機器 Download PDF

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JP5016164B2
JP5016164B2 JP2001046260A JP2001046260A JP5016164B2 JP 5016164 B2 JP5016164 B2 JP 5016164B2 JP 2001046260 A JP2001046260 A JP 2001046260A JP 2001046260 A JP2001046260 A JP 2001046260A JP 5016164 B2 JP5016164 B2 JP 5016164B2
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film
semiconductor
memory
conductor
fine particles
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Japanese (ja)
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JP2002252290A (ja
JP2002252290A5 (https=
Inventor
浩 岩田
晃秀 柴田
暢俊 洗
孝之 小倉
浩一郎 足立
誠三 柿本
幸夫 安田
鎭明 財満
酒井　　朗
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Sharp Corp
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Sharp Corp
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Priority to JP2001046260A priority Critical patent/JP5016164B2/ja
Priority to US10/468,738 priority patent/US7074676B2/en
Priority to PCT/JP2002/001185 priority patent/WO2002067336A1/ja
Publication of JP2002252290A publication Critical patent/JP2002252290A/ja
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/68—Floating-gate IGFETs
    • H10D30/6891—Floating-gate IGFETs characterised by the shapes, relative sizes or dispositions of the floating gate electrode
    • H10D30/6893—Floating-gate IGFETs characterised by the shapes, relative sizes or dispositions of the floating gate electrode wherein the floating gate has multiple non-connected parts, e.g. multi-particle floating gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/031—Manufacture or treatment of data-storage electrodes
    • H10D64/035—Manufacture or treatment of data-storage electrodes comprising conductor-insulator-conductor-insulator-semiconductor structures
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/962—Quantum dots and lines

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
  • Chemical Vapour Deposition (AREA)
  • Formation Of Insulating Films (AREA)
JP2001046260A 2001-02-22 2001-02-22 メモリ膜およびその製造方法、並びにメモリ素子、半導体記憶装置、半導体集積回路および携帯電子機器 Expired - Fee Related JP5016164B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2001046260A JP5016164B2 (ja) 2001-02-22 2001-02-22 メモリ膜およびその製造方法、並びにメモリ素子、半導体記憶装置、半導体集積回路および携帯電子機器
US10/468,738 US7074676B2 (en) 2001-02-22 2002-02-13 Memory film, method of manufacturing the memory film, memory element, semiconductor storage device, semiconductor integrated circuit, and portable electronic equipment
PCT/JP2002/001185 WO2002067336A1 (en) 2001-02-22 2002-02-13 Memory film, method of manufacturing the memory film, memory element, semiconductor storage device, semiconductor integrated circuit, and portable electronic equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001046260A JP5016164B2 (ja) 2001-02-22 2001-02-22 メモリ膜およびその製造方法、並びにメモリ素子、半導体記憶装置、半導体集積回路および携帯電子機器

Publications (3)

Publication Number Publication Date
JP2002252290A JP2002252290A (ja) 2002-09-06
JP2002252290A5 JP2002252290A5 (https=) 2008-03-27
JP5016164B2 true JP5016164B2 (ja) 2012-09-05

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JP2001046260A Expired - Fee Related JP5016164B2 (ja) 2001-02-22 2001-02-22 メモリ膜およびその製造方法、並びにメモリ素子、半導体記憶装置、半導体集積回路および携帯電子機器

Country Status (3)

Country Link
US (1) US7074676B2 (https=)
JP (1) JP5016164B2 (https=)
WO (1) WO2002067336A1 (https=)

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* Cited by examiner, † Cited by third party
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US7462857B2 (en) 2002-09-19 2008-12-09 Sharp Kabushiki Kaisha Memory device including resistance-changing function body
JP4514087B2 (ja) * 2002-09-25 2010-07-28 シャープ株式会社 メモリ膜構造、メモリ素子及びその製造方法、並びに、半導体集積回路及びそれを用いた携帯電子機器
JP4541651B2 (ja) * 2003-03-13 2010-09-08 シャープ株式会社 抵抗変化機能体、メモリおよびその製造方法並びに半導体装置および電子機器
JP4563652B2 (ja) 2003-03-13 2010-10-13 シャープ株式会社 メモリ機能体および微粒子形成方法並びにメモリ素子、半導体装置および電子機器
JP2004342881A (ja) * 2003-05-16 2004-12-02 Sharp Corp 半導体記憶装置および半導体装置およびｉｃカードおよび携帯電子機器および半導体記憶装置の製造方法
JP2004343014A (ja) * 2003-05-19 2004-12-02 Sharp Corp 半導体記憶装置、半導体装置、及びそれらの製造方法、並びに携帯電子機器、並びにｉｃカード
JP4620334B2 (ja) * 2003-05-20 2011-01-26 シャープ株式会社 半導体記憶装置、半導体装置及びそれらを備える携帯電子機器、並びにｉｃカード
JP4072621B2 (ja) * 2003-10-23 2008-04-09 国立大学法人名古屋大学 シリコンナノ結晶の作製方法及びフローティングゲート型メモリキャパシタ構造の作製方法
JP4359207B2 (ja) 2004-08-30 2009-11-04 シャープ株式会社 微粒子含有体の製造方法
US7588988B2 (en) 2004-08-31 2009-09-15 Micron Technology, Inc. Method of forming apparatus having oxide films formed using atomic layer deposition
DE102004055929B4 (de) * 2004-11-19 2014-05-22 Qimonda Ag Nichtflüchtige Speicherzellen-Anordnung
JP4744885B2 (ja) * 2005-01-18 2011-08-10 株式会社東芝 半導体装置の製造方法
KR100718836B1 (ko) 2005-07-14 2007-05-16 삼성전자주식회사 불휘발성 메모리 장치의 게이트 구조물 및 이의 제조 방법
US7927948B2 (en) 2005-07-20 2011-04-19 Micron Technology, Inc. Devices with nanocrystals and methods of formation
US7575978B2 (en) 2005-08-04 2009-08-18 Micron Technology, Inc. Method for making conductive nanoparticle charge storage element
US7592251B2 (en) 2005-12-08 2009-09-22 Micron Technology, Inc. Hafnium tantalum titanium oxide films
US7759747B2 (en) 2006-08-31 2010-07-20 Micron Technology, Inc. Tantalum aluminum oxynitride high-κ dielectric
FR2911598B1 (fr) * 2007-01-22 2009-04-17 Soitec Silicon On Insulator Procede de rugosification de surface.
US7846793B2 (en) * 2007-10-03 2010-12-07 Applied Materials, Inc. Plasma surface treatment for SI and metal nanocrystal nucleation
JP5123830B2 (ja) * 2008-11-26 2013-01-23 ルネサスエレクトロニクス株式会社 反射防止膜、反射防止膜の製造方法、及び反射防止膜を用いた半導体装置

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4870470A (en) * 1987-10-16 1989-09-26 International Business Machines Corporation Non-volatile memory cell having Si rich silicon nitride charge trapping layer
JP3727449B2 (ja) * 1997-09-30 2005-12-14 シャープ株式会社 半導体ナノ結晶の製造方法
FR2772989B1 (fr) * 1997-12-19 2003-06-06 Commissariat Energie Atomique Dispositif de memoire multiniveaux a blocage de coulomb, procede de fabrication et procede de lecture/ecriture/ effacement d'un tel dispositif
KR100271211B1 (ko) * 1998-07-15 2000-12-01 윤덕용 나노결정을 이용한 비휘발성 기억소자 형성방법
US6548825B1 (en) * 1999-06-04 2003-04-15 Matsushita Electric Industrial Co., Ltd. Semiconductor device including barrier layer having dispersed particles
JP2001024075A (ja) * 1999-07-13 2001-01-26 Sony Corp 不揮発性半導体記憶装置及びその書き込み方法

Also Published As

Publication number Publication date
US20040115883A1 (en) 2004-06-17
WO2002067336A1 (en) 2002-08-29
JP2002252290A (ja) 2002-09-06
US7074676B2 (en) 2006-07-11

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