JPWO2021191734A1 - - Google Patents

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Publication number
JPWO2021191734A1
JPWO2021191734A1 JP2022509749A JP2022509749A JPWO2021191734A1 JP WO2021191734 A1 JPWO2021191734 A1 JP WO2021191734A1 JP 2022509749 A JP2022509749 A JP 2022509749A JP 2022509749 A JP2022509749 A JP 2022509749A JP WO2021191734 A1 JPWO2021191734 A1 JP WO2021191734A1
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JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2022509749A
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Japanese (ja)
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JP7706440B2 (ja
JPWO2021191734A5 (https=
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Publication of JPWO2021191734A5 publication Critical patent/JPWO2021191734A5/ja
Priority to JP2025111750A priority Critical patent/JP2025133834A/ja
Application granted granted Critical
Publication of JP7706440B2 publication Critical patent/JP7706440B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1653—Address circuits or decoders
    • G11C11/1655—Bit-line or column circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1653—Address circuits or decoders
    • G11C11/1657—Word-line or row circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1659—Cell access
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1675—Writing or programming circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H10B61/20—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H10B61/20—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors
    • H10B61/22—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors of the field-effect transistor [FET] type
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/10—Phase change RAM [PCRAM, PRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/30—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having three or more electrodes, e.g. transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/80—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays
    • H10B63/84—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays arranged in a direction perpendicular to the substrate, e.g. 3D cell arrays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/40—Devices controlled by magnetic fields
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/80—Constructional details
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N52/00—Hall-effect devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N52/00—Hall-effect devices
    • H10N52/80—Constructional details
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0004—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising amorphous/crystalline phase transition cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/70—Resistive array aspects
    • G11C2213/71—Three dimensional array
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02D—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN INFORMATION AND COMMUNICATION TECHNOLOGIES [ICT], I.E. INFORMATION AND COMMUNICATION TECHNOLOGIES AIMING AT THE REDUCTION OF THEIR OWN ENERGY USE
    • Y02D10/00—Energy efficient computing, e.g. low power processors, power management or thermal management

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Thin Film Transistor (AREA)
  • Semiconductor Memories (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Hall/Mr Elements (AREA)
JP2022509749A 2020-03-27 2021-03-17 記憶装置、及び電子機器 Active JP7706440B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2025111750A JP2025133834A (ja) 2020-03-27 2025-07-01 記憶装置

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2020058397 2020-03-27
JP2020058397 2020-03-27
PCT/IB2021/052197 WO2021191734A1 (ja) 2020-03-27 2021-03-17 記憶装置、及び電子機器

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2025111750A Division JP2025133834A (ja) 2020-03-27 2025-07-01 記憶装置

Publications (3)

Publication Number Publication Date
JPWO2021191734A1 true JPWO2021191734A1 (https=) 2021-09-30
JPWO2021191734A5 JPWO2021191734A5 (https=) 2024-03-05
JP7706440B2 JP7706440B2 (ja) 2025-07-11

Family

ID=77890994

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2022509749A Active JP7706440B2 (ja) 2020-03-27 2021-03-17 記憶装置、及び電子機器
JP2025111750A Pending JP2025133834A (ja) 2020-03-27 2025-07-01 記憶装置

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2025111750A Pending JP2025133834A (ja) 2020-03-27 2025-07-01 記憶装置

Country Status (5)

Country Link
US (2) US12477952B2 (https=)
JP (2) JP7706440B2 (https=)
KR (1) KR20220158241A (https=)
CN (1) CN115349169A (https=)
WO (1) WO2021191734A1 (https=)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11910723B2 (en) * 2019-10-31 2024-02-20 Taiwan Semiconductor Manufacturing Company, Ltd. Memory device with electrically parallel source lines
US12309660B2 (en) * 2021-05-06 2025-05-20 Universal City Studios Llc Systems and methods for layered data reporting in an attraction
CN116347896B (zh) * 2023-03-28 2023-10-20 北京超弦存储器研究院 半导体结构、存储器及其制作方法、电子设备
CN118588129B (zh) * 2024-08-06 2024-11-19 青岛海存微电子有限公司 磁存储结构及磁存储模块

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006186109A (ja) * 2004-12-27 2006-07-13 Toshiba Corp 半導体メモリ
US20130044538A1 (en) * 2011-08-16 2013-02-21 Hyung-Rok Oh Stacked mram device and memory system having the same
JP2013242960A (ja) * 2013-07-01 2013-12-05 Hitachi Ltd 半導体装置
JP2015228493A (ja) * 2014-05-08 2015-12-17 株式会社半導体エネルギー研究所 半導体装置
US20160225423A1 (en) * 2015-02-02 2016-08-04 Globalfoundries Singapore Pte. Ltd. Magnetic memory cells with low switching current density
JP2017059679A (ja) * 2015-09-16 2017-03-23 株式会社東芝 磁気メモリ
WO2019073333A1 (ja) * 2017-10-13 2019-04-18 株式会社半導体エネルギー研究所 記憶装置、電子部品、及び電子機器
US20190334080A1 (en) * 2017-01-17 2019-10-31 Agency For Science, Technology And Research Memory cell, memory array, method of forming and operating memory cell

Family Cites Families (12)

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KR101698193B1 (ko) 2009-09-15 2017-01-19 삼성전자주식회사 3차원 반도체 메모리 장치 및 그 제조 방법
US9177872B2 (en) 2011-09-16 2015-11-03 Micron Technology, Inc. Memory cells, semiconductor devices, systems including such cells, and methods of fabrication
US9869716B2 (en) 2014-02-07 2018-01-16 Semiconductor Energy Laboratory Co., Ltd. Device comprising programmable logic element
US10055232B2 (en) 2014-02-07 2018-08-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising memory circuit
US9804719B2 (en) 2014-10-23 2017-10-31 Semiconductor Energy Laboratory Co., Ltd. Electronic device
US9634097B2 (en) 2014-11-25 2017-04-25 Sandisk Technologies Llc 3D NAND with oxide semiconductor channel
WO2017146644A1 (en) * 2016-02-25 2017-08-31 Agency For Science, Technology And Research Circuit arrangement, method of forming and operating the same
KR102367787B1 (ko) * 2016-06-30 2022-02-24 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 동작 방법
JP2018148157A (ja) 2017-03-09 2018-09-20 ソニーセミコンダクタソリューションズ株式会社 磁気メモリ及び磁気メモリの記録方法
US12200934B2 (en) 2019-09-27 2025-01-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, storage device, and electronic device
JP7595057B2 (ja) 2020-02-21 2024-12-05 株式会社半導体エネルギー研究所 半導体装置、及び電子機器
JPWO2021181192A1 (https=) 2020-03-13 2021-09-16

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006186109A (ja) * 2004-12-27 2006-07-13 Toshiba Corp 半導体メモリ
US20130044538A1 (en) * 2011-08-16 2013-02-21 Hyung-Rok Oh Stacked mram device and memory system having the same
JP2013242960A (ja) * 2013-07-01 2013-12-05 Hitachi Ltd 半導体装置
JP2015228493A (ja) * 2014-05-08 2015-12-17 株式会社半導体エネルギー研究所 半導体装置
US20160225423A1 (en) * 2015-02-02 2016-08-04 Globalfoundries Singapore Pte. Ltd. Magnetic memory cells with low switching current density
JP2017059679A (ja) * 2015-09-16 2017-03-23 株式会社東芝 磁気メモリ
US20190334080A1 (en) * 2017-01-17 2019-10-31 Agency For Science, Technology And Research Memory cell, memory array, method of forming and operating memory cell
WO2019073333A1 (ja) * 2017-10-13 2019-04-18 株式会社半導体エネルギー研究所 記憶装置、電子部品、及び電子機器

Also Published As

Publication number Publication date
US20230106065A1 (en) 2023-04-06
CN115349169A (zh) 2022-11-15
WO2021191734A1 (ja) 2021-09-30
KR20220158241A (ko) 2022-11-30
JP7706440B2 (ja) 2025-07-11
US20260052909A1 (en) 2026-02-19
JP2025133834A (ja) 2025-09-11
US12477952B2 (en) 2025-11-18

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