JPWO2023140253A5 - - Google Patents

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Publication number
JPWO2023140253A5
JPWO2023140253A5 JP2023575255A JP2023575255A JPWO2023140253A5 JP WO2023140253 A5 JPWO2023140253 A5 JP WO2023140253A5 JP 2023575255 A JP2023575255 A JP 2023575255A JP 2023575255 A JP2023575255 A JP 2023575255A JP WO2023140253 A5 JPWO2023140253 A5 JP WO2023140253A5
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JP
Japan
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JP2023575255A
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Japanese (ja)
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JPWO2023140253A1 (https=
JP7593510B2 (ja
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Priority claimed from PCT/JP2023/001200 external-priority patent/WO2023140253A1/ja
Publication of JPWO2023140253A1 publication Critical patent/JPWO2023140253A1/ja
Publication of JPWO2023140253A5 publication Critical patent/JPWO2023140253A5/ja
Priority to JP2024203215A priority Critical patent/JP2025024190A/ja
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Publication of JP7593510B2 publication Critical patent/JP7593510B2/ja
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JP2023575255A 2022-01-20 2023-01-17 半導体装置 Active JP7593510B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2024203215A JP2025024190A (ja) 2022-01-20 2024-11-21 半導体装置

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2022006926 2022-01-20
JP2022006926 2022-01-20
PCT/JP2023/001200 WO2023140253A1 (ja) 2022-01-20 2023-01-17 半導体装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2024203215A Division JP2025024190A (ja) 2022-01-20 2024-11-21 半導体装置

Publications (3)

Publication Number Publication Date
JPWO2023140253A1 JPWO2023140253A1 (https=) 2023-07-27
JPWO2023140253A5 true JPWO2023140253A5 (https=) 2024-04-02
JP7593510B2 JP7593510B2 (ja) 2024-12-03

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ID=87348845

Family Applications (3)

Application Number Title Priority Date Filing Date
JP2023575255A Active JP7593510B2 (ja) 2022-01-20 2023-01-17 半導体装置
JP2023575256A Active JP7593511B2 (ja) 2022-01-20 2023-01-17 半導体装置
JP2024203215A Pending JP2025024190A (ja) 2022-01-20 2024-11-21 半導体装置

Family Applications After (2)

Application Number Title Priority Date Filing Date
JP2023575256A Active JP7593511B2 (ja) 2022-01-20 2023-01-17 半導体装置
JP2024203215A Pending JP2025024190A (ja) 2022-01-20 2024-11-21 半導体装置

Country Status (5)

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US (2) US20240128362A1 (https=)
EP (2) EP4350777A4 (https=)
JP (3) JP7593510B2 (https=)
CN (2) CN117561611A (https=)
WO (2) WO2023140254A1 (https=)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113921394A (zh) * 2020-07-08 2022-01-11 上海贝岭股份有限公司 超级势垒整流器的制备方法以及超级势垒整流器
JP2024098458A (ja) * 2023-01-10 2024-07-23 富士電機株式会社 半導体装置
WO2025089009A1 (ja) * 2023-10-24 2025-05-01 富士電機株式会社 半導体装置および半導体装置の製造方法
WO2025116029A1 (ja) * 2023-11-30 2025-06-05 ローム株式会社 半導体装置

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3971327B2 (ja) * 2003-03-11 2007-09-05 株式会社東芝 絶縁ゲート型半導体装置
JP4500530B2 (ja) * 2003-11-05 2010-07-14 トヨタ自動車株式会社 絶縁ゲート型半導体装置およびその製造方法
US7470953B2 (en) * 2003-10-08 2008-12-30 Toyota Jidosha Kabushiki Kaisha Insulated gate type semiconductor device and manufacturing method thereof
US9252251B2 (en) * 2006-08-03 2016-02-02 Infineon Technologies Austria Ag Semiconductor component with a space saving edge structure
JP6577558B2 (ja) * 2012-08-21 2019-09-18 ローム株式会社 半導体装置
KR20140038750A (ko) * 2012-09-21 2014-03-31 삼성전자주식회사 반도체 장치 및 그 제조 방법
KR20150011185A (ko) * 2013-07-22 2015-01-30 삼성전자주식회사 반도체 장치 및 그 제조 방법
US10468510B2 (en) * 2015-07-16 2019-11-05 Fuji Electric Co., Ltd. Semiconductor device and manufacturing method of the same
DE102015117994B8 (de) * 2015-10-22 2018-08-23 Infineon Technologies Ag Leistungshalbleitertransistor mit einer vollständig verarmten Kanalregion
JP2019012762A (ja) * 2017-06-30 2019-01-24 ルネサスエレクトロニクス株式会社 半導体装置及びその製造方法
DE102017124871B4 (de) * 2017-10-24 2021-06-17 Infineon Technologies Ag Leistungshalbleiter-Vorrichtung und Verfahren zum Herstellen einer Leistungshalbleiter-Vorrichtung
JP7029711B2 (ja) 2017-11-29 2022-03-04 国立研究開発法人産業技術総合研究所 半導体装置
JP7155641B2 (ja) * 2018-06-14 2022-10-19 富士電機株式会社 半導体装置
JP7268330B2 (ja) * 2018-11-05 2023-05-08 富士電機株式会社 半導体装置および製造方法
JP7512624B2 (ja) 2020-03-17 2024-07-09 富士電機株式会社 炭化珪素半導体装置
JP7456520B2 (ja) 2020-12-07 2024-03-27 富士電機株式会社 半導体装置
WO2022158053A1 (ja) 2021-01-25 2022-07-28 富士電機株式会社 半導体装置
CN113054012B (zh) * 2021-02-23 2021-12-03 杭州士兰微电子股份有限公司 绝缘栅双极晶体管及其制造方法
DE112021004621T5 (de) 2021-05-11 2023-06-22 Fuji Electric Co., Ltd. Halbleitervorrichtung
CN116349006A (zh) 2021-05-11 2023-06-27 富士电机株式会社 半导体装置

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