JPWO2023063412A5 - - Google Patents
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- JPWO2023063412A5 JPWO2023063412A5 JP2023554643A JP2023554643A JPWO2023063412A5 JP WO2023063412 A5 JPWO2023063412 A5 JP WO2023063412A5 JP 2023554643 A JP2023554643 A JP 2023554643A JP 2023554643 A JP2023554643 A JP 2023554643A JP WO2023063412 A5 JPWO2023063412 A5 JP WO2023063412A5
- Authority
- JP
- Japan
- Prior art keywords
- region
- semiconductor device
- high resistance
- doping concentration
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- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2021169472 | 2021-10-15 | ||
| JP2021169472 | 2021-10-15 | ||
| PCT/JP2022/038348 WO2023063412A1 (ja) | 2021-10-15 | 2022-10-14 | 半導体装置および半導体装置の製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JPWO2023063412A1 JPWO2023063412A1 (https=) | 2023-04-20 |
| JPWO2023063412A5 true JPWO2023063412A5 (https=) | 2024-01-05 |
| JP7670158B2 JP7670158B2 (ja) | 2025-04-30 |
Family
ID=85988337
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2023554643A Active JP7670158B2 (ja) | 2021-10-15 | 2022-10-14 | 半導体装置および半導体装置の製造方法 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US20240006519A1 (https=) |
| JP (1) | JP7670158B2 (https=) |
| CN (1) | CN117063293A (https=) |
| DE (1) | DE112022000977T5 (https=) |
| WO (1) | WO2023063412A1 (https=) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2026053658A1 (ja) * | 2024-09-05 | 2026-03-12 | 富士電機株式会社 | 半導体装置 |
| CN120224711B (zh) * | 2025-05-28 | 2025-09-16 | 深圳平湖实验室 | 半导体器件及其制备方法 |
| CN120224710A (zh) * | 2025-05-28 | 2025-06-27 | 深圳平湖实验室 | 半导体器件及其制备方法 |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8785278B2 (en) * | 2012-02-02 | 2014-07-22 | Alpha And Omega Semiconductor Incorporated | Nano MOSFET with trench bottom oxide shielded and third dimensional P-body contact |
| DE112012005981B4 (de) * | 2012-03-05 | 2025-04-30 | Mitsubishi Electric Corporation | Halbleitervorrichtungen |
| JP6472714B2 (ja) * | 2015-06-03 | 2019-02-20 | ルネサスエレクトロニクス株式会社 | 半導体装置およびその製造方法 |
| JP6728953B2 (ja) * | 2015-07-16 | 2020-07-22 | 富士電機株式会社 | 半導体装置及びその製造方法 |
| US10347764B2 (en) * | 2017-06-30 | 2019-07-09 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor device with multi-layered source/drain regions having different dopant concentrations and manufacturing method thereof |
| JP6847007B2 (ja) * | 2017-09-13 | 2021-03-24 | 株式会社日立製作所 | 半導体装置およびその製造方法 |
| DE102017124872B4 (de) * | 2017-10-24 | 2021-02-18 | Infineon Technologies Ag | Verfahren zur Herstellung eines IGBT mit dV/dt-Steuerbarkeit |
| DE102017124871B4 (de) | 2017-10-24 | 2021-06-17 | Infineon Technologies Ag | Leistungshalbleiter-Vorrichtung und Verfahren zum Herstellen einer Leistungshalbleiter-Vorrichtung |
| JP7091714B2 (ja) * | 2018-03-01 | 2022-06-28 | 株式会社デンソー | 半導体装置 |
| JP7131003B2 (ja) * | 2018-03-16 | 2022-09-06 | 富士電機株式会社 | 半導体装置 |
| WO2019244681A1 (ja) * | 2018-06-21 | 2019-12-26 | 富士電機株式会社 | 半導体装置および製造方法 |
-
2022
- 2022-10-14 JP JP2023554643A patent/JP7670158B2/ja active Active
- 2022-10-14 CN CN202280024178.2A patent/CN117063293A/zh active Pending
- 2022-10-14 DE DE112022000977.2T patent/DE112022000977T5/de active Pending
- 2022-10-14 WO PCT/JP2022/038348 patent/WO2023063412A1/ja not_active Ceased
-
2023
- 2023-09-18 US US18/469,541 patent/US20240006519A1/en active Pending
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