JPWO2022249526A1 - - Google Patents

Info

Publication number
JPWO2022249526A1
JPWO2022249526A1 JP2023523958A JP2023523958A JPWO2022249526A1 JP WO2022249526 A1 JPWO2022249526 A1 JP WO2022249526A1 JP 2023523958 A JP2023523958 A JP 2023523958A JP 2023523958 A JP2023523958 A JP 2023523958A JP WO2022249526 A1 JPWO2022249526 A1 JP WO2022249526A1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2023523958A
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPWO2022249526A1 publication Critical patent/JPWO2022249526A1/ja
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • H10W90/701Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00Interconnections in chips, wafers or substrates
    • H10W20/40Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/482Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes for individual devices provided for in groups H10D8/00 - H10D48/00, e.g. for power transistors
    • H10W20/484Interconnections having extended contours, e.g. pads having mesh shape or interconnections comprising connected parallel stripes
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/62Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their interconnections
    • H10W70/65Shapes or dispositions of interconnections
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/67Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their insulating layers or insulating parts
    • H10W70/69Insulating materials thereof
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/01Manufacture or treatment
    • H10W72/012Manufacture or treatment of bump connectors, dummy bumps or thermal bumps
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/01Manufacture or treatment
    • H10W72/019Manufacture or treatment of bond pads
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/071Connecting or disconnecting
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/20Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/20Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/221Structures or relative sizes
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/20Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/231Shapes
    • H10W72/234Cross-sectional shape, i.e. in side view
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/20Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/241Dispositions, e.g. layouts
    • H10W72/242Dispositions, e.g. layouts relative to the surface, e.g. recessed, protruding
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/20Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/241Dispositions, e.g. layouts
    • H10W72/244Dispositions, e.g. layouts relative to underlying supporting features, e.g. bond pads, RDLs or vias
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/90Bond pads, in general
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00Encapsulations, e.g. protective coatings
    • H10W74/10Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/111Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed
    • H10W74/121Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed by multiple encapsulations, e.g. by a thin protective coating and a thick encapsulation
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00Encapsulations, e.g. protective coatings
    • H10W74/10Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/131Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being only partially enclosed
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60Insulating or insulated package substrates; Interposers; Redistribution layers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/90Bond pads, in general
    • H10W72/941Dispositions of bond pads
    • H10W72/9415Dispositions of bond pads relative to the surface, e.g. recessed, protruding
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W80/00Direct bonding of chips, wafers or substrates
    • H10W80/701Direct bonding of chips, wafers or substrates characterised by the pads after the direct bonding
    • H10W80/743Direct bonding of chips, wafers or substrates characterised by the pads after the direct bonding having disposition changed during the connecting
JP2023523958A 2021-05-25 2021-12-28 Pending JPWO2022249526A1 (https=)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2021087821 2021-05-25
PCT/JP2021/048934 WO2022249526A1 (ja) 2021-05-25 2021-12-28 半導体パッケージおよび電子機器

Publications (1)

Publication Number Publication Date
JPWO2022249526A1 true JPWO2022249526A1 (https=) 2022-12-01

Family

ID=84229743

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2023523958A Pending JPWO2022249526A1 (https=) 2021-05-25 2021-12-28

Country Status (6)

Country Link
US (1) US20250096087A1 (https=)
JP (1) JPWO2022249526A1 (https=)
KR (1) KR20240012398A (https=)
CN (1) CN117397017A (https=)
TW (1) TW202247367A (https=)
WO (1) WO2022249526A1 (https=)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12582014B2 (en) * 2022-08-23 2026-03-17 Micron Technology, Inc. Semiconductor device assembly substrates with tunneled interconnects, and methods for making the same
KR20250018381A (ko) * 2023-07-21 2025-02-05 양쯔 메모리 테크놀로지스 씨오., 엘티디. 향상된 상호연결 볼 그리드 어레이 설계, 반도체 구조물 및 그 제조 방법
US20250300112A1 (en) * 2024-03-19 2025-09-25 Qualcomm Incorporated Integrated device comprising extended metallization region for pillar interconnects
WO2026078922A1 (ja) * 2024-10-08 2026-04-16 パナソニックIpマネジメント株式会社 電子部品

Citations (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6038839A (ja) * 1983-08-12 1985-02-28 Hitachi Ltd フリツプチツプ型半導体装置
JPH0513601A (ja) * 1991-07-02 1993-01-22 Matsushita Electron Corp 半導体装置およびその製造方法
JPH0722538A (ja) * 1993-07-06 1995-01-24 Citizen Watch Co Ltd ボールグリッドアレイ型半導体パッケージの構造
JPH11111771A (ja) * 1997-10-07 1999-04-23 Matsushita Electric Ind Co Ltd 配線基板の接続方法、キャリア基板および配線基板
JP2000299356A (ja) * 1999-04-15 2000-10-24 Sharp Corp Bga型半導体パッケージの実装構造およびその実装方法
JP2004207368A (ja) * 2002-12-24 2004-07-22 Fujikura Ltd 半導体装置とその製造方法及び電子装置
JP2006294761A (ja) * 2005-04-07 2006-10-26 Sharp Corp 半導体装置,電子機器および半導体装置の製造方法
JP2007048802A (ja) * 2005-08-08 2007-02-22 Tdk Corp 配線板
JP2008135762A (ja) * 2007-12-17 2008-06-12 Fujikura Ltd 半導体装置とその製造方法及び電子装置
JP2008166353A (ja) * 2006-12-27 2008-07-17 Rohm Co Ltd 半導体装置
JP2010092974A (ja) * 2008-10-06 2010-04-22 Fujikura Ltd 半導体装置及びその製造方法、並びに電子装置
JP2011134942A (ja) * 2009-12-25 2011-07-07 Fujitsu Semiconductor Ltd 半導体装置及びその製造方法
JP2012191123A (ja) * 2011-03-14 2012-10-04 Renesas Electronics Corp 半導体集積回路装置およびその製造方法ならびにそれを用いた電子システム
JP2013115336A (ja) * 2011-11-30 2013-06-10 Renesas Electronics Corp 半導体装置及びその製造方法
JP2014526149A (ja) * 2011-07-29 2014-10-02 テセラ インコーポレイテッド 低応力ビア
JP2016092339A (ja) * 2014-11-10 2016-05-23 ローム株式会社 半導体装置およびその製造方法
JP2016518730A (ja) * 2013-05-20 2016-06-23 クアルコム,インコーポレイテッド 上面および側壁保護のためのモールドを備える半導体デバイス
US9484291B1 (en) * 2013-05-28 2016-11-01 Amkor Technology Inc. Robust pillar structure for semicondcutor device contacts
US20170125369A1 (en) * 2015-11-04 2017-05-04 Sfa Semicon Co., Ltd. Semiconductor package and method for manufacturing the same
JP2017228583A (ja) * 2016-06-20 2017-12-28 住友電工デバイス・イノベーション株式会社 半導体装置の製造方法
WO2018168316A1 (ja) * 2017-03-13 2018-09-20 三菱電機株式会社 半導体装置および半導体装置の製造方法
JP2020141054A (ja) * 2019-02-28 2020-09-03 住友電工デバイス・イノベーション株式会社 半導体装置の製造方法及び半導体装置

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101901411B1 (ko) 2016-12-27 2018-09-28 한국철도기술연구원 도어 어셈블리

Patent Citations (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6038839A (ja) * 1983-08-12 1985-02-28 Hitachi Ltd フリツプチツプ型半導体装置
JPH0513601A (ja) * 1991-07-02 1993-01-22 Matsushita Electron Corp 半導体装置およびその製造方法
JPH0722538A (ja) * 1993-07-06 1995-01-24 Citizen Watch Co Ltd ボールグリッドアレイ型半導体パッケージの構造
JPH11111771A (ja) * 1997-10-07 1999-04-23 Matsushita Electric Ind Co Ltd 配線基板の接続方法、キャリア基板および配線基板
JP2000299356A (ja) * 1999-04-15 2000-10-24 Sharp Corp Bga型半導体パッケージの実装構造およびその実装方法
JP2004207368A (ja) * 2002-12-24 2004-07-22 Fujikura Ltd 半導体装置とその製造方法及び電子装置
JP2006294761A (ja) * 2005-04-07 2006-10-26 Sharp Corp 半導体装置,電子機器および半導体装置の製造方法
JP2007048802A (ja) * 2005-08-08 2007-02-22 Tdk Corp 配線板
JP2008166353A (ja) * 2006-12-27 2008-07-17 Rohm Co Ltd 半導体装置
JP2008135762A (ja) * 2007-12-17 2008-06-12 Fujikura Ltd 半導体装置とその製造方法及び電子装置
JP2010092974A (ja) * 2008-10-06 2010-04-22 Fujikura Ltd 半導体装置及びその製造方法、並びに電子装置
JP2011134942A (ja) * 2009-12-25 2011-07-07 Fujitsu Semiconductor Ltd 半導体装置及びその製造方法
JP2012191123A (ja) * 2011-03-14 2012-10-04 Renesas Electronics Corp 半導体集積回路装置およびその製造方法ならびにそれを用いた電子システム
JP2014526149A (ja) * 2011-07-29 2014-10-02 テセラ インコーポレイテッド 低応力ビア
JP2013115336A (ja) * 2011-11-30 2013-06-10 Renesas Electronics Corp 半導体装置及びその製造方法
JP2016518730A (ja) * 2013-05-20 2016-06-23 クアルコム,インコーポレイテッド 上面および側壁保護のためのモールドを備える半導体デバイス
US9484291B1 (en) * 2013-05-28 2016-11-01 Amkor Technology Inc. Robust pillar structure for semicondcutor device contacts
JP2016092339A (ja) * 2014-11-10 2016-05-23 ローム株式会社 半導体装置およびその製造方法
US20170125369A1 (en) * 2015-11-04 2017-05-04 Sfa Semicon Co., Ltd. Semiconductor package and method for manufacturing the same
JP2017228583A (ja) * 2016-06-20 2017-12-28 住友電工デバイス・イノベーション株式会社 半導体装置の製造方法
WO2018168316A1 (ja) * 2017-03-13 2018-09-20 三菱電機株式会社 半導体装置および半導体装置の製造方法
JP2020141054A (ja) * 2019-02-28 2020-09-03 住友電工デバイス・イノベーション株式会社 半導体装置の製造方法及び半導体装置

Also Published As

Publication number Publication date
TW202247367A (zh) 2022-12-01
KR20240012398A (ko) 2024-01-29
WO2022249526A1 (ja) 2022-12-01
US20250096087A1 (en) 2025-03-20
CN117397017A (zh) 2024-01-12

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