JPWO2022196741A5 - - Google Patents
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- JPWO2022196741A5 JPWO2022196741A5 JP2023507164A JP2023507164A JPWO2022196741A5 JP WO2022196741 A5 JPWO2022196741 A5 JP WO2022196741A5 JP 2023507164 A JP2023507164 A JP 2023507164A JP 2023507164 A JP2023507164 A JP 2023507164A JP WO2022196741 A5 JPWO2022196741 A5 JP WO2022196741A5
- Authority
- JP
- Japan
- Prior art keywords
- layer
- heavy metal
- ferromagnetic
- metal layer
- magnetization
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2021044188 | 2021-03-17 | ||
| JP2021044188 | 2021-03-17 | ||
| PCT/JP2022/012083 WO2022196741A1 (ja) | 2021-03-17 | 2022-03-16 | 磁気抵抗効果素子、磁気メモリ及び人工知能システム |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JPWO2022196741A1 JPWO2022196741A1 (https=) | 2022-09-22 |
| JPWO2022196741A5 true JPWO2022196741A5 (https=) | 2025-02-06 |
| JP7807091B2 JP7807091B2 (ja) | 2026-01-27 |
Family
ID=83321089
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2023507164A Active JP7807091B2 (ja) | 2021-03-17 | 2022-03-16 | 磁気抵抗効果素子、磁気メモリ及び人工知能システム |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US20240244983A1 (https=) |
| JP (1) | JP7807091B2 (https=) |
| KR (1) | KR102944053B1 (https=) |
| CN (1) | CN116998021A (https=) |
| WO (1) | WO2022196741A1 (https=) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US12185639B2 (en) * | 2021-12-23 | 2024-12-31 | Northwestern University | Antiferromagnetic memory device featuring tunneling magnetoresistance readout and current-induced writing of information |
| CN119156121B (zh) * | 2024-11-11 | 2025-04-18 | 青岛海存微电子有限公司 | 半导体器件及其制备方法 |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR102080631B1 (ko) * | 2014-08-08 | 2020-02-24 | 고쿠리츠 다이가쿠 호진 도호쿠 다이가쿠 | 자기 저항 효과 소자 및 자기 메모리 장치 |
| WO2016159017A1 (ja) | 2015-03-31 | 2016-10-06 | 国立大学法人東北大学 | 磁気抵抗効果素子、磁気メモリ装置、製造方法、動作方法、及び集積回路 |
| JP5985728B1 (ja) * | 2015-09-15 | 2016-09-06 | 株式会社東芝 | 磁気メモリ |
| US9899071B2 (en) * | 2016-01-20 | 2018-02-20 | The Johns Hopkins University | Heavy metal multilayers for switching of magnetic unit via electrical current without magnetic field, method and applications |
| US20170330070A1 (en) * | 2016-02-28 | 2017-11-16 | Purdue Research Foundation | Spin orbit torque based electronic neuron |
| JP7267623B2 (ja) | 2018-02-13 | 2023-05-02 | 国立大学法人東北大学 | 磁気抵抗効果素子及び磁気メモリ |
| US11610614B2 (en) * | 2018-04-18 | 2023-03-21 | Tohoku University | Magnetoresistive element, magnetic memory device, and writing and reading method for magnetic memory device |
| JP2020155488A (ja) * | 2019-03-18 | 2020-09-24 | キオクシア株式会社 | 磁気記憶装置 |
-
2022
- 2022-03-16 WO PCT/JP2022/012083 patent/WO2022196741A1/ja not_active Ceased
- 2022-03-16 KR KR1020237034779A patent/KR102944053B1/ko active Active
- 2022-03-16 US US18/282,277 patent/US20240244983A1/en active Pending
- 2022-03-16 JP JP2023507164A patent/JP7807091B2/ja active Active
- 2022-03-16 CN CN202280022035.8A patent/CN116998021A/zh active Pending
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