JPWO2020166141A5 - - Google Patents

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JPWO2020166141A5
JPWO2020166141A5 JP2020572081A JP2020572081A JPWO2020166141A5 JP WO2020166141 A5 JPWO2020166141 A5 JP WO2020166141A5 JP 2020572081 A JP2020572081 A JP 2020572081A JP 2020572081 A JP2020572081 A JP 2020572081A JP WO2020166141 A5 JPWO2020166141 A5 JP WO2020166141A5
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Japan
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layer
heavy metal
magnetic memory
metal layer
memory element
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JP2020572081A
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Japanese (ja)
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JP7475057B2 (ja
JPWO2020166141A1 (https=
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Priority claimed from PCT/JP2019/042667 external-priority patent/WO2020166141A1/ja
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JP2020572081A 2019-02-13 2019-10-30 磁性積層膜、磁気メモリ素子及び磁気メモリ Active JP7475057B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2019024012 2019-02-13
JP2019024012 2019-02-13
PCT/JP2019/042667 WO2020166141A1 (ja) 2019-02-13 2019-10-30 磁性積層膜、磁気メモリ素子及び磁気メモリ

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JPWO2020166141A1 JPWO2020166141A1 (https=) 2020-08-20
JPWO2020166141A5 true JPWO2020166141A5 (https=) 2022-11-08
JP7475057B2 JP7475057B2 (ja) 2024-04-26

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US (1) US11532667B2 (https=)
JP (1) JP7475057B2 (https=)
KR (1) KR102705726B1 (https=)
WO (1) WO2020166141A1 (https=)

Families Citing this family (12)

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Publication number Priority date Publication date Assignee Title
CN112582531A (zh) * 2019-09-30 2021-03-30 华为技术有限公司 一种磁性存储器及其制备方法
CN114641868B (zh) * 2019-10-31 2026-03-17 国立大学法人东北大学 隧道结层叠膜、磁存储元件和磁存储器
TWI770950B (zh) * 2020-04-28 2022-07-11 台灣積體電路製造股份有限公司 記憶體單元、記憶體系統與記憶體單元的操作方法
JP7644464B2 (ja) * 2020-07-15 2025-03-12 国立大学法人京都大学 磁気メモリ素子、磁気メモリ装置、および磁気メモリ素子へデータを記憶する方法
JP2023165050A (ja) * 2020-10-02 2023-11-15 Tdk株式会社 磁気素子及び集積装置
WO2022160226A1 (zh) 2021-01-29 2022-08-04 北京航空航天大学 一种存储阵列、存储器、制备方法及写入方法
US11538858B2 (en) * 2021-03-05 2022-12-27 Taiwan Semiconductor Manufacturing Company, Ltd. Memory device, method of forming the same, and memory array
US12185639B2 (en) * 2021-12-23 2024-12-31 Northwestern University Antiferromagnetic memory device featuring tunneling magnetoresistance readout and current-induced writing of information
KR102787478B1 (ko) * 2023-08-14 2025-03-26 성균관대학교산학협력단 Sot 타입 자기 저항 메모리 및 그 제조 방법
JPWO2025037420A1 (https=) * 2023-08-17 2025-02-20
WO2025070485A1 (ja) * 2023-09-26 2025-04-03 国立研究開発法人産業技術総合研究所 磁気素子、磁気メモリ、高周波発振器およびその製造方法
JP7834255B1 (ja) * 2025-08-22 2026-03-23 Tdk株式会社 反強磁性結合積層体、スピン軌道トルクデバイス、乱数発生器、磁化反転素子及びスピンインダクタ

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7218484B2 (en) * 2002-09-11 2007-05-15 Kabushiki Kaisha Toshiba Magnetoresistance effect element, magnetic head, and magnetic reproducing apparatus
JP4435521B2 (ja) * 2002-09-11 2010-03-17 株式会社東芝 磁気抵抗効果素子の製造方法
US9076537B2 (en) 2012-08-26 2015-07-07 Samsung Electronics Co., Ltd. Method and system for providing a magnetic tunneling junction using spin-orbit interaction based switching and memories utilizing the magnetic tunneling junction
JP2014179447A (ja) 2013-03-14 2014-09-25 Toshiba Corp 磁気記憶素子
JP2015179773A (ja) 2014-03-19 2015-10-08 株式会社東芝 熱電変換素子
US10008248B2 (en) 2014-07-17 2018-06-26 Cornell University Circuits and devices based on enhanced spin hall effect for efficient spin transfer torque
KR102080631B1 (ko) * 2014-08-08 2020-02-24 고쿠리츠 다이가쿠 호진 도호쿠 다이가쿠 자기 저항 효과 소자 및 자기 메모리 장치
US9218864B1 (en) * 2014-10-04 2015-12-22 Ge Yi Magnetoresistive random access memory cell and 3D memory cell array
JP6200471B2 (ja) 2015-09-14 2017-09-20 株式会社東芝 磁気メモリ
JP6270934B2 (ja) 2015-12-14 2018-01-31 株式会社東芝 磁気メモリ
US11200933B2 (en) 2016-06-03 2021-12-14 Tohoku University Magnetic multilayer film, magnetic memory element, magnetic memory and method for producing same
JP6374452B2 (ja) * 2016-08-04 2018-08-15 株式会社東芝 磁気メモリ
JP6948993B2 (ja) * 2018-08-20 2021-10-13 株式会社東芝 磁気記憶装置

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