JPWO2020166141A1 - - Google Patents

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Publication number
JPWO2020166141A1
JPWO2020166141A1 JP2020572081A JP2020572081A JPWO2020166141A1 JP WO2020166141 A1 JPWO2020166141 A1 JP WO2020166141A1 JP 2020572081 A JP2020572081 A JP 2020572081A JP 2020572081 A JP2020572081 A JP 2020572081A JP WO2020166141 A1 JPWO2020166141 A1 JP WO2020166141A1
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JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Application number
JP2020572081A
Other languages
Japanese (ja)
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JPWO2020166141A5 (https=
JP7475057B2 (ja
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Publication of JPWO2020166141A1 publication Critical patent/JPWO2020166141A1/ja
Publication of JPWO2020166141A5 publication Critical patent/JPWO2020166141A5/ja
Application granted granted Critical
Publication of JP7475057B2 publication Critical patent/JP7475057B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1659—Cell access
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1673—Reading or sensing circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1675—Writing or programming circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/18—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using Hall-effect devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/26—Thin magnetic films, e.g. of one-domain structure characterised by the substrate or intermediate layers
    • H01F10/30—Thin magnetic films, e.g. of one-domain structure characterised by the substrate or intermediate layers characterised by the composition of the intermediate layers, e.g. seed, buffer, template, diffusion preventing, cap layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
    • H01F10/3254—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the spacer being semiconducting or insulating, e.g. for spin tunnel junction [STJ]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
    • H01F10/329—Spin-exchange coupled multilayers wherein the magnetisation of the free layer is switched by a spin-polarised current, e.g. spin torque effect
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H10B61/20—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors
    • H10B61/22—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors of the field-effect transistor [FET] type
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/40—Devices controlled by magnetic fields
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/80—Constructional details
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/80—Constructional details
    • H10N50/85—Materials of the active region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
    • H01F10/3286—Spin-exchange coupled multilayers having at least one layer with perpendicular magnetic anisotropy

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Hall/Mr Elements (AREA)
  • Mram Or Spin Memory Techniques (AREA)
JP2020572081A 2019-02-13 2019-10-30 磁性積層膜、磁気メモリ素子及び磁気メモリ Active JP7475057B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2019024012 2019-02-13
JP2019024012 2019-02-13
PCT/JP2019/042667 WO2020166141A1 (ja) 2019-02-13 2019-10-30 磁性積層膜、磁気メモリ素子及び磁気メモリ

Publications (3)

Publication Number Publication Date
JPWO2020166141A1 true JPWO2020166141A1 (https=) 2020-08-20
JPWO2020166141A5 JPWO2020166141A5 (https=) 2022-11-08
JP7475057B2 JP7475057B2 (ja) 2024-04-26

Family

ID=72044082

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2020572081A Active JP7475057B2 (ja) 2019-02-13 2019-10-30 磁性積層膜、磁気メモリ素子及び磁気メモリ

Country Status (4)

Country Link
US (1) US11532667B2 (https=)
JP (1) JP7475057B2 (https=)
KR (1) KR102705726B1 (https=)
WO (1) WO2020166141A1 (https=)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112582531A (zh) * 2019-09-30 2021-03-30 华为技术有限公司 一种磁性存储器及其制备方法
CN114641868B (zh) * 2019-10-31 2026-03-17 国立大学法人东北大学 隧道结层叠膜、磁存储元件和磁存储器
TWI770950B (zh) 2020-04-28 2022-07-11 台灣積體電路製造股份有限公司 記憶體單元、記憶體系統與記憶體單元的操作方法
JP7644464B2 (ja) * 2020-07-15 2025-03-12 国立大学法人京都大学 磁気メモリ素子、磁気メモリ装置、および磁気メモリ素子へデータを記憶する方法
JP2023165050A (ja) * 2020-10-02 2023-11-15 Tdk株式会社 磁気素子及び集積装置
WO2022160226A1 (zh) 2021-01-29 2022-08-04 北京航空航天大学 一种存储阵列、存储器、制备方法及写入方法
US11538858B2 (en) * 2021-03-05 2022-12-27 Taiwan Semiconductor Manufacturing Company, Ltd. Memory device, method of forming the same, and memory array
US12185639B2 (en) * 2021-12-23 2024-12-31 Northwestern University Antiferromagnetic memory device featuring tunneling magnetoresistance readout and current-induced writing of information
KR102787478B1 (ko) * 2023-08-14 2025-03-26 성균관대학교산학협력단 Sot 타입 자기 저항 메모리 및 그 제조 방법
CN121621042A (zh) * 2023-08-17 2026-03-06 Sp-Aith有限公司 磁器件
WO2025070485A1 (ja) * 2023-09-26 2025-04-03 国立研究開発法人産業技術総合研究所 磁気素子、磁気メモリ、高周波発振器およびその製造方法
JP7834255B1 (ja) * 2025-08-22 2026-03-23 Tdk株式会社 反強磁性結合積層体、スピン軌道トルクデバイス、乱数発生器、磁化反転素子及びスピンインダクタ

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014045196A (ja) * 2012-08-26 2014-03-13 Samsung Electronics Co Ltd スイッチングに基づいたスピン軌道相互作用を使用する磁気トンネルリング接合と、磁気トンネルリング接合を利用するメモリを提供するための方法及びシステム
JP2015179773A (ja) * 2014-03-19 2015-10-08 株式会社東芝 熱電変換素子
US9218864B1 (en) * 2014-10-04 2015-12-22 Ge Yi Magnetoresistive random access memory cell and 3D memory cell array
WO2016021468A1 (ja) * 2014-08-08 2016-02-11 国立大学法人東北大学 磁気抵抗効果素子、及び磁気メモリ装置
JP2017059594A (ja) * 2015-09-14 2017-03-23 株式会社東芝 磁気メモリ
US20170178705A1 (en) * 2014-07-17 2017-06-22 Cornell University Circuits and devices based on enhanced spin hall effect for efficient spin transfer torque
WO2017208576A1 (ja) * 2016-06-03 2017-12-07 国立大学法人東北大学 磁性積層膜、磁気メモリ素子、磁気メモリ、及びその製造方法
JP2018022796A (ja) * 2016-08-04 2018-02-08 株式会社東芝 磁気メモリ

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7218484B2 (en) * 2002-09-11 2007-05-15 Kabushiki Kaisha Toshiba Magnetoresistance effect element, magnetic head, and magnetic reproducing apparatus
JP4435521B2 (ja) * 2002-09-11 2010-03-17 株式会社東芝 磁気抵抗効果素子の製造方法
JP2014179447A (ja) 2013-03-14 2014-09-25 Toshiba Corp 磁気記憶素子
JP6270934B2 (ja) 2015-12-14 2018-01-31 株式会社東芝 磁気メモリ
JP6948993B2 (ja) * 2018-08-20 2021-10-13 株式会社東芝 磁気記憶装置

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014045196A (ja) * 2012-08-26 2014-03-13 Samsung Electronics Co Ltd スイッチングに基づいたスピン軌道相互作用を使用する磁気トンネルリング接合と、磁気トンネルリング接合を利用するメモリを提供するための方法及びシステム
JP2015179773A (ja) * 2014-03-19 2015-10-08 株式会社東芝 熱電変換素子
US20170178705A1 (en) * 2014-07-17 2017-06-22 Cornell University Circuits and devices based on enhanced spin hall effect for efficient spin transfer torque
WO2016021468A1 (ja) * 2014-08-08 2016-02-11 国立大学法人東北大学 磁気抵抗効果素子、及び磁気メモリ装置
US9218864B1 (en) * 2014-10-04 2015-12-22 Ge Yi Magnetoresistive random access memory cell and 3D memory cell array
JP2017059594A (ja) * 2015-09-14 2017-03-23 株式会社東芝 磁気メモリ
WO2017208576A1 (ja) * 2016-06-03 2017-12-07 国立大学法人東北大学 磁性積層膜、磁気メモリ素子、磁気メモリ、及びその製造方法
JP2018022796A (ja) * 2016-08-04 2018-02-08 株式会社東芝 磁気メモリ

Also Published As

Publication number Publication date
KR102705726B1 (ko) 2024-09-12
KR20210127717A (ko) 2021-10-22
US11532667B2 (en) 2022-12-20
WO2020166141A1 (ja) 2020-08-20
US20220115440A1 (en) 2022-04-14
JP7475057B2 (ja) 2024-04-26

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