KR102705726B1 - 자성 적층막, 자기 메모리 소자 및 자기 메모리 - Google Patents

자성 적층막, 자기 메모리 소자 및 자기 메모리 Download PDF

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KR102705726B1
KR102705726B1 KR1020217028810A KR20217028810A KR102705726B1 KR 102705726 B1 KR102705726 B1 KR 102705726B1 KR 1020217028810 A KR1020217028810 A KR 1020217028810A KR 20217028810 A KR20217028810 A KR 20217028810A KR 102705726 B1 KR102705726 B1 KR 102705726B1
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layer
heavy metal
magnetic memory
magnetic
metal layer
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KR20210127717A (ko
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요시아키 사이토
쇼지 이케다
히데오 사토
데츠오 엔도오
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도호쿠 다이가쿠
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1659—Cell access
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1673—Reading or sensing circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1675—Writing or programming circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/18—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using Hall-effect devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/26—Thin magnetic films, e.g. of one-domain structure characterised by the substrate or intermediate layers
    • H01F10/30—Thin magnetic films, e.g. of one-domain structure characterised by the substrate or intermediate layers characterised by the composition of the intermediate layers, e.g. seed, buffer, template, diffusion preventing, cap layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
    • H01F10/3254—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the spacer being semiconducting or insulating, e.g. for spin tunnel junction [STJ]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
    • H01F10/3286—Spin-exchange coupled multilayers having at least one layer with perpendicular magnetic anisotropy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
    • H01F10/329—Spin-exchange coupled multilayers wherein the magnetisation of the free layer is switched by a spin-polarised current, e.g. spin torque effect
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H10B61/20—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors
    • H10B61/22—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors of the field-effect transistor [FET] type
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/40—Devices controlled by magnetic fields
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/80—Constructional details
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/80—Constructional details
    • H10N50/85—Materials of the active region

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Hall/Mr Elements (AREA)
  • Mram Or Spin Memory Techniques (AREA)
KR1020217028810A 2019-02-13 2019-10-30 자성 적층막, 자기 메모리 소자 및 자기 메모리 Active KR102705726B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JPJP-P-2019-024012 2019-02-13
JP2019024012 2019-02-13
PCT/JP2019/042667 WO2020166141A1 (ja) 2019-02-13 2019-10-30 磁性積層膜、磁気メモリ素子及び磁気メモリ

Publications (2)

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KR20210127717A KR20210127717A (ko) 2021-10-22
KR102705726B1 true KR102705726B1 (ko) 2024-09-12

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Country Link
US (1) US11532667B2 (https=)
JP (1) JP7475057B2 (https=)
KR (1) KR102705726B1 (https=)
WO (1) WO2020166141A1 (https=)

Families Citing this family (12)

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Publication number Priority date Publication date Assignee Title
CN112582531A (zh) * 2019-09-30 2021-03-30 华为技术有限公司 一种磁性存储器及其制备方法
CN114641868B (zh) * 2019-10-31 2026-03-17 国立大学法人东北大学 隧道结层叠膜、磁存储元件和磁存储器
TWI770950B (zh) 2020-04-28 2022-07-11 台灣積體電路製造股份有限公司 記憶體單元、記憶體系統與記憶體單元的操作方法
JP7644464B2 (ja) * 2020-07-15 2025-03-12 国立大学法人京都大学 磁気メモリ素子、磁気メモリ装置、および磁気メモリ素子へデータを記憶する方法
JP2023165050A (ja) * 2020-10-02 2023-11-15 Tdk株式会社 磁気素子及び集積装置
WO2022160226A1 (zh) 2021-01-29 2022-08-04 北京航空航天大学 一种存储阵列、存储器、制备方法及写入方法
US11538858B2 (en) * 2021-03-05 2022-12-27 Taiwan Semiconductor Manufacturing Company, Ltd. Memory device, method of forming the same, and memory array
US12185639B2 (en) * 2021-12-23 2024-12-31 Northwestern University Antiferromagnetic memory device featuring tunneling magnetoresistance readout and current-induced writing of information
KR102787478B1 (ko) * 2023-08-14 2025-03-26 성균관대학교산학협력단 Sot 타입 자기 저항 메모리 및 그 제조 방법
CN121621042A (zh) * 2023-08-17 2026-03-06 Sp-Aith有限公司 磁器件
WO2025070485A1 (ja) * 2023-09-26 2025-04-03 国立研究開発法人産業技術総合研究所 磁気素子、磁気メモリ、高周波発振器およびその製造方法
JP7834255B1 (ja) * 2025-08-22 2026-03-23 Tdk株式会社 反強磁性結合積層体、スピン軌道トルクデバイス、乱数発生器、磁化反転素子及びスピンインダクタ

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004153248A (ja) * 2002-09-11 2004-05-27 Toshiba Corp 磁気抵抗効果素子及びその製造方法、磁気ヘッド並びに磁気再生装置
JP2014045196A (ja) * 2012-08-26 2014-03-13 Samsung Electronics Co Ltd スイッチングに基づいたスピン軌道相互作用を使用する磁気トンネルリング接合と、磁気トンネルリング接合を利用するメモリを提供するための方法及びシステム

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7218484B2 (en) * 2002-09-11 2007-05-15 Kabushiki Kaisha Toshiba Magnetoresistance effect element, magnetic head, and magnetic reproducing apparatus
JP2014179447A (ja) 2013-03-14 2014-09-25 Toshiba Corp 磁気記憶素子
JP2015179773A (ja) * 2014-03-19 2015-10-08 株式会社東芝 熱電変換素子
KR102419536B1 (ko) * 2014-07-17 2022-07-11 코넬 유니버시티 효율적인 스핀 전달 토크를 위한 향상된 스핀 홀 효과에 기초한 회로들 및 디바이스들
JP6168578B2 (ja) 2014-08-08 2017-07-26 国立大学法人東北大学 磁気抵抗効果素子、及び磁気メモリ装置
US9218864B1 (en) * 2014-10-04 2015-12-22 Ge Yi Magnetoresistive random access memory cell and 3D memory cell array
JP6200471B2 (ja) * 2015-09-14 2017-09-20 株式会社東芝 磁気メモリ
JP6270934B2 (ja) 2015-12-14 2018-01-31 株式会社東芝 磁気メモリ
US11200933B2 (en) * 2016-06-03 2021-12-14 Tohoku University Magnetic multilayer film, magnetic memory element, magnetic memory and method for producing same
JP6374452B2 (ja) * 2016-08-04 2018-08-15 株式会社東芝 磁気メモリ
JP6948993B2 (ja) * 2018-08-20 2021-10-13 株式会社東芝 磁気記憶装置

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004153248A (ja) * 2002-09-11 2004-05-27 Toshiba Corp 磁気抵抗効果素子及びその製造方法、磁気ヘッド並びに磁気再生装置
JP2014045196A (ja) * 2012-08-26 2014-03-13 Samsung Electronics Co Ltd スイッチングに基づいたスピン軌道相互作用を使用する磁気トンネルリング接合と、磁気トンネルリング接合を利用するメモリを提供するための方法及びシステム

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KR20210127717A (ko) 2021-10-22
US11532667B2 (en) 2022-12-20
JPWO2020166141A1 (https=) 2020-08-20
WO2020166141A1 (ja) 2020-08-20
US20220115440A1 (en) 2022-04-14
JP7475057B2 (ja) 2024-04-26

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