JP7807091B2 - 磁気抵抗効果素子、磁気メモリ及び人工知能システム - Google Patents

磁気抵抗効果素子、磁気メモリ及び人工知能システム

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Publication number
JP7807091B2
JP7807091B2 JP2023507164A JP2023507164A JP7807091B2 JP 7807091 B2 JP7807091 B2 JP 7807091B2 JP 2023507164 A JP2023507164 A JP 2023507164A JP 2023507164 A JP2023507164 A JP 2023507164A JP 7807091 B2 JP7807091 B2 JP 7807091B2
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Japan
Prior art keywords
layer
heavy metal
ferromagnetic
metal layer
magnetization
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JP2023507164A
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English (en)
Japanese (ja)
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JPWO2022196741A5 (https=
JPWO2022196741A1 (https=
Inventor
好昭 齋藤
正二 池田
哲郎 遠藤
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Tohoku University NUC
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Tohoku University NUC
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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06N—COMPUTING ARRANGEMENTS BASED ON SPECIFIC COMPUTATIONAL MODELS
    • G06N3/00—Computing arrangements based on biological models
    • G06N3/02—Neural networks
    • G06N3/06—Physical realisation, i.e. hardware implementation of neural networks, neurons or parts of neurons
    • G06N3/063—Physical realisation, i.e. hardware implementation of neural networks, neurons or parts of neurons using electronic means
    • G06N3/065—Analogue means
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/26—Thin magnetic films, e.g. of one-domain structure characterised by the substrate or intermediate layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F10/3213—Exchange coupling of magnetic semiconductor multilayers, e.g. MnSe/ZnSe superlattices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H10B61/20—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors
    • H10B61/22—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors of the field-effect transistor [FET] type
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/40—Devices controlled by magnetic fields
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/80—Constructional details
    • H10N50/85—Materials of the active region

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Biophysics (AREA)
  • Theoretical Computer Science (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biomedical Technology (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Artificial Intelligence (AREA)
  • Molecular Biology (AREA)
  • Software Systems (AREA)
  • Computational Linguistics (AREA)
  • Data Mining & Analysis (AREA)
  • Evolutionary Computation (AREA)
  • General Health & Medical Sciences (AREA)
  • Neurology (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Hall/Mr Elements (AREA)
JP2023507164A 2021-03-17 2022-03-16 磁気抵抗効果素子、磁気メモリ及び人工知能システム Active JP7807091B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2021044188 2021-03-17
JP2021044188 2021-03-17
PCT/JP2022/012083 WO2022196741A1 (ja) 2021-03-17 2022-03-16 磁気抵抗効果素子、磁気メモリ及び人工知能システム

Publications (3)

Publication Number Publication Date
JPWO2022196741A1 JPWO2022196741A1 (https=) 2022-09-22
JPWO2022196741A5 JPWO2022196741A5 (https=) 2025-02-06
JP7807091B2 true JP7807091B2 (ja) 2026-01-27

Family

ID=83321089

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2023507164A Active JP7807091B2 (ja) 2021-03-17 2022-03-16 磁気抵抗効果素子、磁気メモリ及び人工知能システム

Country Status (5)

Country Link
US (1) US20240244983A1 (https=)
JP (1) JP7807091B2 (https=)
KR (1) KR102944053B1 (https=)
CN (1) CN116998021A (https=)
WO (1) WO2022196741A1 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12185639B2 (en) * 2021-12-23 2024-12-31 Northwestern University Antiferromagnetic memory device featuring tunneling magnetoresistance readout and current-induced writing of information
CN119156121B (zh) * 2024-11-11 2025-04-18 青岛海存微电子有限公司 半导体器件及其制备方法

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2016021468A1 (ja) 2014-08-08 2016-02-11 国立大学法人東北大学 磁気抵抗効果素子、及び磁気メモリ装置
JP2017059634A (ja) 2015-09-15 2017-03-23 株式会社東芝 磁気メモリ
US20170229160A1 (en) 2016-01-20 2017-08-10 The Johns Hopkins University Heavy metal multilayers for switching of magnetic unit via electrical current without magnetic field, method and applications
US20170330070A1 (en) 2016-02-28 2017-11-16 Purdue Research Foundation Spin orbit torque based electronic neuron
WO2019203132A1 (ja) 2018-04-18 2019-10-24 国立大学法人東北大学 磁気抵抗効果素子、磁気メモリ装置並びに磁気メモリ装置の書き込み及び読み出し方法
JP2020155488A (ja) 2019-03-18 2020-09-24 キオクシア株式会社 磁気記憶装置

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2016159017A1 (ja) 2015-03-31 2016-10-06 国立大学法人東北大学 磁気抵抗効果素子、磁気メモリ装置、製造方法、動作方法、及び集積回路
JP7267623B2 (ja) 2018-02-13 2023-05-02 国立大学法人東北大学 磁気抵抗効果素子及び磁気メモリ

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2016021468A1 (ja) 2014-08-08 2016-02-11 国立大学法人東北大学 磁気抵抗効果素子、及び磁気メモリ装置
JP2017059634A (ja) 2015-09-15 2017-03-23 株式会社東芝 磁気メモリ
US20170229160A1 (en) 2016-01-20 2017-08-10 The Johns Hopkins University Heavy metal multilayers for switching of magnetic unit via electrical current without magnetic field, method and applications
US20170330070A1 (en) 2016-02-28 2017-11-16 Purdue Research Foundation Spin orbit torque based electronic neuron
WO2019203132A1 (ja) 2018-04-18 2019-10-24 国立大学法人東北大学 磁気抵抗効果素子、磁気メモリ装置並びに磁気メモリ装置の書き込み及び読み出し方法
JP2020155488A (ja) 2019-03-18 2020-09-24 キオクシア株式会社 磁気記憶装置

Also Published As

Publication number Publication date
US20240244983A1 (en) 2024-07-18
WO2022196741A1 (ja) 2022-09-22
JPWO2022196741A1 (https=) 2022-09-22
KR20230158535A (ko) 2023-11-20
KR102944053B1 (ko) 2026-03-25
CN116998021A (zh) 2023-11-03

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