CN116998021A - 磁阻效应元件、磁存储器和人工智能系统 - Google Patents

磁阻效应元件、磁存储器和人工智能系统 Download PDF

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Publication number
CN116998021A
CN116998021A CN202280022035.8A CN202280022035A CN116998021A CN 116998021 A CN116998021 A CN 116998021A CN 202280022035 A CN202280022035 A CN 202280022035A CN 116998021 A CN116998021 A CN 116998021A
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CN
China
Prior art keywords
layer
heavy metal
ferromagnetic
magnetization
metal layer
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Pending
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CN202280022035.8A
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English (en)
Chinese (zh)
Inventor
斋藤好昭
池田正二
远藤哲郎
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Tohoku University NUC
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Tohoku University NUC
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Filing date
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Publication of CN116998021A publication Critical patent/CN116998021A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06N—COMPUTING ARRANGEMENTS BASED ON SPECIFIC COMPUTATIONAL MODELS
    • G06N3/00—Computing arrangements based on biological models
    • G06N3/02—Neural networks
    • G06N3/06—Physical realisation, i.e. hardware implementation of neural networks, neurons or parts of neurons
    • G06N3/063—Physical realisation, i.e. hardware implementation of neural networks, neurons or parts of neurons using electronic means
    • G06N3/065—Analogue means
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/26—Thin magnetic films, e.g. of one-domain structure characterised by the substrate or intermediate layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F10/3213—Exchange coupling of magnetic semiconductor multilayers, e.g. MnSe/ZnSe superlattices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H10B61/20—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors
    • H10B61/22—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors of the field-effect transistor [FET] type
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/40—Devices controlled by magnetic fields
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/80—Constructional details
    • H10N50/85—Materials of the active region

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Biophysics (AREA)
  • Theoretical Computer Science (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biomedical Technology (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Artificial Intelligence (AREA)
  • Molecular Biology (AREA)
  • Software Systems (AREA)
  • Computational Linguistics (AREA)
  • Data Mining & Analysis (AREA)
  • Evolutionary Computation (AREA)
  • General Health & Medical Sciences (AREA)
  • Neurology (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Hall/Mr Elements (AREA)
CN202280022035.8A 2021-03-17 2022-03-16 磁阻效应元件、磁存储器和人工智能系统 Pending CN116998021A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2021-044188 2021-03-17
JP2021044188 2021-03-17
PCT/JP2022/012083 WO2022196741A1 (ja) 2021-03-17 2022-03-16 磁気抵抗効果素子、磁気メモリ及び人工知能システム

Publications (1)

Publication Number Publication Date
CN116998021A true CN116998021A (zh) 2023-11-03

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
CN202280022035.8A Pending CN116998021A (zh) 2021-03-17 2022-03-16 磁阻效应元件、磁存储器和人工智能系统

Country Status (5)

Country Link
US (1) US20240244983A1 (https=)
JP (1) JP7807091B2 (https=)
KR (1) KR102944053B1 (https=)
CN (1) CN116998021A (https=)
WO (1) WO2022196741A1 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN119156121A (zh) * 2024-11-11 2024-12-17 青岛海存微电子有限公司 半导体器件及其制备方法

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12185639B2 (en) * 2021-12-23 2024-12-31 Northwestern University Antiferromagnetic memory device featuring tunneling magnetoresistance readout and current-induced writing of information

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102080631B1 (ko) * 2014-08-08 2020-02-24 고쿠리츠 다이가쿠 호진 도호쿠 다이가쿠 자기 저항 효과 소자 및 자기 메모리 장치
WO2016159017A1 (ja) 2015-03-31 2016-10-06 国立大学法人東北大学 磁気抵抗効果素子、磁気メモリ装置、製造方法、動作方法、及び集積回路
JP5985728B1 (ja) * 2015-09-15 2016-09-06 株式会社東芝 磁気メモリ
US9899071B2 (en) * 2016-01-20 2018-02-20 The Johns Hopkins University Heavy metal multilayers for switching of magnetic unit via electrical current without magnetic field, method and applications
US20170330070A1 (en) * 2016-02-28 2017-11-16 Purdue Research Foundation Spin orbit torque based electronic neuron
JP7267623B2 (ja) 2018-02-13 2023-05-02 国立大学法人東北大学 磁気抵抗効果素子及び磁気メモリ
US11610614B2 (en) * 2018-04-18 2023-03-21 Tohoku University Magnetoresistive element, magnetic memory device, and writing and reading method for magnetic memory device
JP2020155488A (ja) * 2019-03-18 2020-09-24 キオクシア株式会社 磁気記憶装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN119156121A (zh) * 2024-11-11 2024-12-17 青岛海存微电子有限公司 半导体器件及其制备方法

Also Published As

Publication number Publication date
US20240244983A1 (en) 2024-07-18
JP7807091B2 (ja) 2026-01-27
WO2022196741A1 (ja) 2022-09-22
JPWO2022196741A1 (https=) 2022-09-22
KR20230158535A (ko) 2023-11-20
KR102944053B1 (ko) 2026-03-25

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