JPWO2022113609A5 - - Google Patents

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Publication number
JPWO2022113609A5
JPWO2022113609A5 JP2022565131A JP2022565131A JPWO2022113609A5 JP WO2022113609 A5 JPWO2022113609 A5 JP WO2022113609A5 JP 2022565131 A JP2022565131 A JP 2022565131A JP 2022565131 A JP2022565131 A JP 2022565131A JP WO2022113609 A5 JPWO2022113609 A5 JP WO2022113609A5
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JP
Japan
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semiconductor device
showing
silicon carbide
sectional
carbide semiconductor
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JP2022565131A
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English (en)
Japanese (ja)
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JP7775837B2 (ja
JPWO2022113609A1 (https=
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Priority claimed from PCT/JP2021/039332 external-priority patent/WO2022113609A1/ja
Publication of JPWO2022113609A1 publication Critical patent/JPWO2022113609A1/ja
Publication of JPWO2022113609A5 publication Critical patent/JPWO2022113609A5/ja
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JP2022565131A 2020-11-30 2021-10-25 炭化珪素半導体装置 Active JP7775837B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2020198539 2020-11-30
JP2020198539 2020-11-30
PCT/JP2021/039332 WO2022113609A1 (ja) 2020-11-30 2021-10-25 炭化珪素半導体装置

Publications (3)

Publication Number Publication Date
JPWO2022113609A1 JPWO2022113609A1 (https=) 2022-06-02
JPWO2022113609A5 true JPWO2022113609A5 (https=) 2023-08-15
JP7775837B2 JP7775837B2 (ja) 2025-11-26

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ID=81755792

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2022565131A Active JP7775837B2 (ja) 2020-11-30 2021-10-25 炭化珪素半導体装置

Country Status (5)

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US (1) US12568665B2 (https=)
JP (1) JP7775837B2 (https=)
CN (1) CN116529852A (https=)
DE (1) DE112021006225T5 (https=)
WO (1) WO2022113609A1 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN119277806A (zh) * 2023-07-03 2025-01-07 达尔科技股份有限公司 半导体整流器件及其制造方法
WO2025190499A1 (en) * 2024-03-15 2025-09-18 Hitachi Energy Ltd Unit cell of a multi-trench semiconductor device and semiconductor device

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4453671B2 (ja) * 2006-03-08 2010-04-21 トヨタ自動車株式会社 絶縁ゲート型半導体装置およびその製造方法
JP5630114B2 (ja) 2010-07-16 2014-11-26 トヨタ自動車株式会社 炭化珪素半導体装置
JP5751213B2 (ja) * 2012-06-14 2015-07-22 株式会社デンソー 炭化珪素半導体装置およびその製造方法
JP6367760B2 (ja) 2015-06-11 2018-08-01 トヨタ自動車株式会社 絶縁ゲート型スイッチング装置とその製造方法
JP6500628B2 (ja) 2015-06-18 2019-04-17 住友電気工業株式会社 炭化珪素半導体装置およびその製造方法
CN114503283B (zh) * 2019-12-20 2025-11-25 住友电气工业株式会社 碳化硅半导体装置

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