JPWO2022113609A1 - - Google Patents

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Publication number
JPWO2022113609A1
JPWO2022113609A1 JP2022565131A JP2022565131A JPWO2022113609A1 JP WO2022113609 A1 JPWO2022113609 A1 JP WO2022113609A1 JP 2022565131 A JP2022565131 A JP 2022565131A JP 2022565131 A JP2022565131 A JP 2022565131A JP WO2022113609 A1 JPWO2022113609 A1 JP WO2022113609A1
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JP
Japan
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Application number
JP2022565131A
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Japanese (ja)
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JP7775837B2 (ja
JPWO2022113609A5 (https=
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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/149—Source or drain regions of field-effect devices
    • H10D62/151—Source or drain regions of field-effect devices of IGFETs 
    • H10D62/152—Source regions of DMOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/01—Manufacture or treatment
    • H10D12/031—Manufacture or treatment of IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/028—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs
    • H10D30/0291—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of vertical DMOS [VDMOS] FETs
    • H10D30/0297—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of vertical DMOS [VDMOS] FETs using recessing of the gate electrodes, e.g. to form trench gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/662—Vertical DMOS [VDMOS] FETs having a drift region having a doping concentration that is higher between adjacent body regions relative to other parts of the drift region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/668—Vertical DMOS [VDMOS] FETs having trench gate electrodes, e.g. UMOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/106—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE]  having supplementary regions doped oppositely to or in rectifying contact with regions of the semiconductor bodies, e.g. guard rings with PN or Schottky junctions
    • H10D62/107—Buried supplementary regions, e.g. buried guard rings 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/109—Reduced surface field [RESURF] PN junction structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H10D62/126—Top-view geometrical layouts of the regions or the junctions
    • H10D62/127—Top-view geometrical layouts of the regions or the junctions of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/149—Source or drain regions of field-effect devices
    • H10D62/151—Source or drain regions of field-effect devices of IGFETs 
    • H10D62/156—Drain regions of DMOS transistors
    • H10D62/157—Impurity concentrations or distributions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/393—Body regions of DMOS transistors or IGBTs 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325—Silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/013—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator
    • H10D64/01366—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the semiconductor being silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/22—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping using masks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/62—Electrodes ohmically coupled to a semiconductor
JP2022565131A 2020-11-30 2021-10-25 炭化珪素半導体装置 Active JP7775837B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2020198539 2020-11-30
JP2020198539 2020-11-30
PCT/JP2021/039332 WO2022113609A1 (ja) 2020-11-30 2021-10-25 炭化珪素半導体装置

Publications (3)

Publication Number Publication Date
JPWO2022113609A1 true JPWO2022113609A1 (https=) 2022-06-02
JPWO2022113609A5 JPWO2022113609A5 (https=) 2023-08-15
JP7775837B2 JP7775837B2 (ja) 2025-11-26

Family

ID=81755792

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2022565131A Active JP7775837B2 (ja) 2020-11-30 2021-10-25 炭化珪素半導体装置

Country Status (5)

Country Link
US (1) US12568665B2 (https=)
JP (1) JP7775837B2 (https=)
CN (1) CN116529852A (https=)
DE (1) DE112021006225T5 (https=)
WO (1) WO2022113609A1 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN119277806A (zh) * 2023-07-03 2025-01-07 达尔科技股份有限公司 半导体整流器件及其制造方法
WO2025190499A1 (en) * 2024-03-15 2025-09-18 Hitachi Energy Ltd Unit cell of a multi-trench semiconductor device and semiconductor device

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007242852A (ja) * 2006-03-08 2007-09-20 Toyota Motor Corp 絶縁ゲート型半導体装置およびその製造方法
JP2013258369A (ja) * 2012-06-14 2013-12-26 Denso Corp 炭化珪素半導体装置およびその製造方法
WO2016204112A1 (ja) * 2015-06-18 2016-12-22 住友電気工業株式会社 炭化珪素半導体装置およびその製造方法
JP2017005140A (ja) * 2015-06-11 2017-01-05 トヨタ自動車株式会社 絶縁ゲート型スイッチング装置とその製造方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5630114B2 (ja) 2010-07-16 2014-11-26 トヨタ自動車株式会社 炭化珪素半導体装置
CN114503283B (zh) * 2019-12-20 2025-11-25 住友电气工业株式会社 碳化硅半导体装置

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007242852A (ja) * 2006-03-08 2007-09-20 Toyota Motor Corp 絶縁ゲート型半導体装置およびその製造方法
JP2013258369A (ja) * 2012-06-14 2013-12-26 Denso Corp 炭化珪素半導体装置およびその製造方法
JP2017005140A (ja) * 2015-06-11 2017-01-05 トヨタ自動車株式会社 絶縁ゲート型スイッチング装置とその製造方法
WO2016204112A1 (ja) * 2015-06-18 2016-12-22 住友電気工業株式会社 炭化珪素半導体装置およびその製造方法

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
TAKAHASHI ET.AL.: "Carrier stored trench-gate bipolar transistor(CSTBT)-a novel power device for high voltage applicati", PROCEEDINGS OF 8THINTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS. ISPSD '96, JPN6025014734, 23 May 1996 (1996-05-23), US, pages 349 - 352, ISSN: 0005572264 *

Also Published As

Publication number Publication date
US12568665B2 (en) 2026-03-03
US20230395664A1 (en) 2023-12-07
JP7775837B2 (ja) 2025-11-26
DE112021006225T5 (de) 2023-10-05
CN116529852A (zh) 2023-08-01
WO2022113609A1 (ja) 2022-06-02

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