JPWO2022080253A5 - - Google Patents

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Publication number
JPWO2022080253A5
JPWO2022080253A5 JP2022556910A JP2022556910A JPWO2022080253A5 JP WO2022080253 A5 JPWO2022080253 A5 JP WO2022080253A5 JP 2022556910 A JP2022556910 A JP 2022556910A JP 2022556910 A JP2022556910 A JP 2022556910A JP WO2022080253 A5 JPWO2022080253 A5 JP WO2022080253A5
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Japan
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pattern
avoids
channel region
variable
capacitive element
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JP2022556910A
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Japanese (ja)
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JPWO2022080253A1 (https=
JP7569536B2 (ja
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Priority claimed from PCT/JP2021/037331 external-priority patent/WO2022080253A1/ja
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JP2022556910A 2020-10-12 2021-10-08 可変電子素子、および回路装置 Active JP7569536B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2020172070 2020-10-12
JP2020172070 2020-10-12
PCT/JP2021/037331 WO2022080253A1 (ja) 2020-10-12 2021-10-08 可変電子素子、および回路装置

Publications (3)

Publication Number Publication Date
JPWO2022080253A1 JPWO2022080253A1 (https=) 2022-04-21
JPWO2022080253A5 true JPWO2022080253A5 (https=) 2023-06-29
JP7569536B2 JP7569536B2 (ja) 2024-10-18

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Family Applications (1)

Application Number Title Priority Date Filing Date
JP2022556910A Active JP7569536B2 (ja) 2020-10-12 2021-10-08 可変電子素子、および回路装置

Country Status (5)

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US (1) US20230246040A1 (https=)
EP (1) EP4187604A4 (https=)
JP (1) JP7569536B2 (https=)
CN (1) CN116325039B (https=)
WO (1) WO2022080253A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2025142588A1 (ja) * 2023-12-27 2025-07-03 株式会社村田製作所 発振器、およびその製造方法、情報処理装置

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0555474A (ja) * 1991-08-23 1993-03-05 Mitsubishi Electric Corp 半導体装置
JP2002373829A (ja) 2001-06-15 2002-12-26 Murata Mfg Co Ltd 可変キャパシタ
DE10162263A1 (de) * 2001-12-18 2003-07-10 Infineon Technologies Ag Induktives Bauteil
KR100466542B1 (ko) 2002-11-13 2005-01-15 한국전자통신연구원 적층형 가변 인덕터
JP4939838B2 (ja) 2005-05-31 2012-05-30 株式会社半導体エネルギー研究所 記憶装置
JP2009147204A (ja) 2007-12-17 2009-07-02 Taiyo Yuden Co Ltd 可変キャパシタ
JP2010272815A (ja) 2009-05-25 2010-12-02 Renesas Electronics Corp 可変インダクタ
CN102570839A (zh) 2010-12-16 2012-07-11 西安高度电子科技有限公司 改变电容来改变谐振频率的llc谐振型dc-dc电源
US8837203B2 (en) 2011-05-19 2014-09-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP6231735B2 (ja) 2011-06-01 2017-11-15 株式会社半導体エネルギー研究所 半導体装置
CN204442303U (zh) * 2012-06-08 2015-07-01 株式会社村田制作所 可变电容元件、高频设备以及通信装置
US9318618B2 (en) 2013-12-27 2016-04-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
DE112018001517T5 (de) * 2017-03-22 2019-12-05 Sony Semiconductor Solutions Corporation Halbleitervorrichtung und modul
US10741702B2 (en) * 2018-10-08 2020-08-11 Qualcomm Incorporated Thin-film variable metal-oxide-semiconductor (MOS) capacitor for passive-on-glass (POG) tunable capacitor
WO2021205695A1 (ja) * 2020-04-10 2021-10-14 株式会社村田製作所 可変容量素子及びそれを備えた発振器

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