JPWO2022080253A1 - - Google Patents
Info
- Publication number
- JPWO2022080253A1 JPWO2022080253A1 JP2022556910A JP2022556910A JPWO2022080253A1 JP WO2022080253 A1 JPWO2022080253 A1 JP WO2022080253A1 JP 2022556910 A JP2022556910 A JP 2022556910A JP 2022556910 A JP2022556910 A JP 2022556910A JP WO2022080253 A1 JPWO2022080253 A1 JP WO2022080253A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/80—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple passive components, e.g. resistors, capacitors or inductors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/33—Thin- or thick-film capacitors (thin- or thick-film circuits; capacitors without a potential-jump or surface barrier specially adapted for integrated circuits, details thereof, multistep manufacturing processes therefor)
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F21/00—Variable inductances or transformers of the signal type
- H01F21/12—Variable inductances or transformers of the signal type discontinuously variable, e.g. tapped
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/40—Structural combinations of fixed capacitors with other electric elements, the structure mainly consisting of a capacitor, e.g. RC combinations
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
- H10D84/811—Combinations of field-effect devices and one or more diodes, capacitors or resistors
- H10D84/817—Combinations of field-effect devices and resistors only
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/01—Manufacture or treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D88/00—Three-dimensional [3D] integrated devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/38—Multiple capacitors, i.e. structural combinations of fixed capacitors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D1/00—Resistors, capacitors or inductors
- H10D1/20—Inductors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D1/00—Resistors, capacitors or inductors
- H10D1/40—Resistors
- H10D1/47—Resistors having no potential barriers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D1/00—Resistors, capacitors or inductors
- H10D1/60—Capacitors
- H10D1/68—Capacitors having no potential barriers
- H10D1/692—Electrodes
- H10D1/711—Electrodes having non-planar surfaces, e.g. formed by texturisation
- H10D1/714—Electrodes having non-planar surfaces, e.g. formed by texturisation having horizontal extensions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D1/00—Resistors, capacitors or inductors
- H10D1/60—Capacitors
- H10D1/68—Capacitors having no potential barriers
- H10D1/692—Electrodes
- H10D1/711—Electrodes having non-planar surfaces, e.g. formed by texturisation
- H10D1/716—Electrodes having non-planar surfaces, e.g. formed by texturisation having vertical extensions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/674—Thin-film transistors [TFT] characterised by the active materials
- H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/201—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates the substrates comprising an insulating layer on a semiconductor body, e.g. SOI
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Integrated Circuits (AREA)
- Ceramic Capacitors (AREA)
- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Thin Film Transistor (AREA)
- Filters And Equalizers (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2020172070 | 2020-10-12 | ||
| JP2020172070 | 2020-10-12 | ||
| PCT/JP2021/037331 WO2022080253A1 (ja) | 2020-10-12 | 2021-10-08 | 可変電子素子、および回路装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JPWO2022080253A1 true JPWO2022080253A1 (https=) | 2022-04-21 |
| JPWO2022080253A5 JPWO2022080253A5 (https=) | 2023-06-29 |
| JP7569536B2 JP7569536B2 (ja) | 2024-10-18 |
Family
ID=81208123
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2022556910A Active JP7569536B2 (ja) | 2020-10-12 | 2021-10-08 | 可変電子素子、および回路装置 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US20230246040A1 (https=) |
| EP (1) | EP4187604A4 (https=) |
| JP (1) | JP7569536B2 (https=) |
| CN (1) | CN116325039B (https=) |
| WO (1) | WO2022080253A1 (https=) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2025142588A1 (ja) * | 2023-12-27 | 2025-07-03 | 株式会社村田製作所 | 発振器、およびその製造方法、情報処理装置 |
Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040140528A1 (en) * | 2002-11-13 | 2004-07-22 | Kim Cheon Soo | Stacked variable inductor |
| JP2007013116A (ja) * | 2005-05-31 | 2007-01-18 | Semiconductor Energy Lab Co Ltd | 半導体装置及びその作製方法 |
| JP2009147204A (ja) * | 2007-12-17 | 2009-07-02 | Taiyo Yuden Co Ltd | 可変キャパシタ |
| JP2010272815A (ja) * | 2009-05-25 | 2010-12-02 | Renesas Electronics Corp | 可変インダクタ |
| CN102570839A (zh) * | 2010-12-16 | 2012-07-11 | 西安高度电子科技有限公司 | 改变电容来改变谐振频率的llc谐振型dc-dc电源 |
| JP2012256878A (ja) * | 2011-05-19 | 2012-12-27 | Semiconductor Energy Lab Co Ltd | 半導体装置 |
| JP2013012730A (ja) * | 2011-06-01 | 2013-01-17 | Semiconductor Energy Lab Co Ltd | 半導体装置 |
| JP2015144266A (ja) * | 2013-12-27 | 2015-08-06 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| WO2018173497A1 (ja) * | 2017-03-22 | 2018-09-27 | ソニーセミコンダクタソリューションズ株式会社 | 半導体装置及びモジュール |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0555474A (ja) * | 1991-08-23 | 1993-03-05 | Mitsubishi Electric Corp | 半導体装置 |
| JP2002373829A (ja) | 2001-06-15 | 2002-12-26 | Murata Mfg Co Ltd | 可変キャパシタ |
| DE10162263A1 (de) * | 2001-12-18 | 2003-07-10 | Infineon Technologies Ag | Induktives Bauteil |
| CN204442303U (zh) * | 2012-06-08 | 2015-07-01 | 株式会社村田制作所 | 可变电容元件、高频设备以及通信装置 |
| US10741702B2 (en) * | 2018-10-08 | 2020-08-11 | Qualcomm Incorporated | Thin-film variable metal-oxide-semiconductor (MOS) capacitor for passive-on-glass (POG) tunable capacitor |
| WO2021205695A1 (ja) * | 2020-04-10 | 2021-10-14 | 株式会社村田製作所 | 可変容量素子及びそれを備えた発振器 |
-
2021
- 2021-10-08 JP JP2022556910A patent/JP7569536B2/ja active Active
- 2021-10-08 CN CN202180068716.3A patent/CN116325039B/zh active Active
- 2021-10-08 WO PCT/JP2021/037331 patent/WO2022080253A1/ja not_active Ceased
- 2021-10-08 EP EP21879992.2A patent/EP4187604A4/en active Pending
-
2023
- 2023-04-11 US US18/298,520 patent/US20230246040A1/en active Pending
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040140528A1 (en) * | 2002-11-13 | 2004-07-22 | Kim Cheon Soo | Stacked variable inductor |
| JP2007013116A (ja) * | 2005-05-31 | 2007-01-18 | Semiconductor Energy Lab Co Ltd | 半導体装置及びその作製方法 |
| JP2009147204A (ja) * | 2007-12-17 | 2009-07-02 | Taiyo Yuden Co Ltd | 可変キャパシタ |
| JP2010272815A (ja) * | 2009-05-25 | 2010-12-02 | Renesas Electronics Corp | 可変インダクタ |
| CN102570839A (zh) * | 2010-12-16 | 2012-07-11 | 西安高度电子科技有限公司 | 改变电容来改变谐振频率的llc谐振型dc-dc电源 |
| JP2012256878A (ja) * | 2011-05-19 | 2012-12-27 | Semiconductor Energy Lab Co Ltd | 半導体装置 |
| JP2013012730A (ja) * | 2011-06-01 | 2013-01-17 | Semiconductor Energy Lab Co Ltd | 半導体装置 |
| JP2015144266A (ja) * | 2013-12-27 | 2015-08-06 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| WO2018173497A1 (ja) * | 2017-03-22 | 2018-09-27 | ソニーセミコンダクタソリューションズ株式会社 | 半導体装置及びモジュール |
Also Published As
| Publication number | Publication date |
|---|---|
| CN116325039A (zh) | 2023-06-23 |
| WO2022080253A1 (ja) | 2022-04-21 |
| EP4187604A1 (en) | 2023-05-31 |
| US20230246040A1 (en) | 2023-08-03 |
| CN116325039B (zh) | 2025-11-07 |
| EP4187604A4 (en) | 2024-07-31 |
| JP7569536B2 (ja) | 2024-10-18 |
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