CN116325039B - 可变电子元件以及电路装置 - Google Patents

可变电子元件以及电路装置

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Publication number
CN116325039B
CN116325039B CN202180068716.3A CN202180068716A CN116325039B CN 116325039 B CN116325039 B CN 116325039B CN 202180068716 A CN202180068716 A CN 202180068716A CN 116325039 B CN116325039 B CN 116325039B
Authority
CN
China
Prior art keywords
electrode
source electrode
drain electrode
capacitor
terminal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN202180068716.3A
Other languages
English (en)
Chinese (zh)
Other versions
CN116325039A (zh
Inventor
宫迫毅明
德光永辅
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Japan Advanced Institute of Science and Technology
Murata Manufacturing Co Ltd
Original Assignee
Japan Advanced Institute of Science and Technology
Murata Manufacturing Co Ltd
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Publication date
Application filed by Japan Advanced Institute of Science and Technology, Murata Manufacturing Co Ltd filed Critical Japan Advanced Institute of Science and Technology
Publication of CN116325039A publication Critical patent/CN116325039A/zh
Application granted granted Critical
Publication of CN116325039B publication Critical patent/CN116325039B/zh
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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/80—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple passive components, e.g. resistors, capacitors or inductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/33—Thin- or thick-film capacitors (thin- or thick-film circuits; capacitors without a potential-jump or surface barrier specially adapted for integrated circuits, details thereof, multistep manufacturing processes therefor)
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F21/00—Variable inductances or transformers of the signal type
    • H01F21/12—Variable inductances or transformers of the signal type discontinuously variable, e.g. tapped
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/40—Structural combinations of fixed capacitors with other electric elements, the structure mainly consisting of a capacitor, e.g. RC combinations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/811—Combinations of field-effect devices and one or more diodes, capacitors or resistors
    • H10D84/817—Combinations of field-effect devices and resistors only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D88/00—Three-dimensional [3D] integrated devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/38—Multiple capacitors, i.e. structural combinations of fixed capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/20—Inductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/40—Resistors
    • H10D1/47—Resistors having no potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/692—Electrodes
    • H10D1/711—Electrodes having non-planar surfaces, e.g. formed by texturisation
    • H10D1/714—Electrodes having non-planar surfaces, e.g. formed by texturisation having horizontal extensions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/692—Electrodes
    • H10D1/711—Electrodes having non-planar surfaces, e.g. formed by texturisation
    • H10D1/716—Electrodes having non-planar surfaces, e.g. formed by texturisation having vertical extensions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/201—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates the substrates comprising an insulating layer on a semiconductor body, e.g. SOI

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Ceramic Capacitors (AREA)
  • Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Thin Film Transistor (AREA)
  • Filters And Equalizers (AREA)
CN202180068716.3A 2020-10-12 2021-10-08 可变电子元件以及电路装置 Active CN116325039B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2020-172070 2020-10-12
JP2020172070 2020-10-12
PCT/JP2021/037331 WO2022080253A1 (ja) 2020-10-12 2021-10-08 可変電子素子、および回路装置

Publications (2)

Publication Number Publication Date
CN116325039A CN116325039A (zh) 2023-06-23
CN116325039B true CN116325039B (zh) 2025-11-07

Family

ID=81208123

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202180068716.3A Active CN116325039B (zh) 2020-10-12 2021-10-08 可变电子元件以及电路装置

Country Status (5)

Country Link
US (1) US20230246040A1 (https=)
EP (1) EP4187604A4 (https=)
JP (1) JP7569536B2 (https=)
CN (1) CN116325039B (https=)
WO (1) WO2022080253A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2025142588A1 (ja) * 2023-12-27 2025-07-03 株式会社村田製作所 発振器、およびその製造方法、情報処理装置

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110419163A (zh) * 2017-03-22 2019-11-05 索尼半导体解决方案公司 半导体装置及模块

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0555474A (ja) * 1991-08-23 1993-03-05 Mitsubishi Electric Corp 半導体装置
JP2002373829A (ja) 2001-06-15 2002-12-26 Murata Mfg Co Ltd 可変キャパシタ
DE10162263A1 (de) * 2001-12-18 2003-07-10 Infineon Technologies Ag Induktives Bauteil
KR100466542B1 (ko) 2002-11-13 2005-01-15 한국전자통신연구원 적층형 가변 인덕터
JP4939838B2 (ja) 2005-05-31 2012-05-30 株式会社半導体エネルギー研究所 記憶装置
JP2009147204A (ja) 2007-12-17 2009-07-02 Taiyo Yuden Co Ltd 可変キャパシタ
JP2010272815A (ja) 2009-05-25 2010-12-02 Renesas Electronics Corp 可変インダクタ
CN102570839A (zh) 2010-12-16 2012-07-11 西安高度电子科技有限公司 改变电容来改变谐振频率的llc谐振型dc-dc电源
US8837203B2 (en) 2011-05-19 2014-09-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP6231735B2 (ja) 2011-06-01 2017-11-15 株式会社半導体エネルギー研究所 半導体装置
CN204442303U (zh) * 2012-06-08 2015-07-01 株式会社村田制作所 可变电容元件、高频设备以及通信装置
US9318618B2 (en) 2013-12-27 2016-04-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US10741702B2 (en) * 2018-10-08 2020-08-11 Qualcomm Incorporated Thin-film variable metal-oxide-semiconductor (MOS) capacitor for passive-on-glass (POG) tunable capacitor
WO2021205695A1 (ja) * 2020-04-10 2021-10-14 株式会社村田製作所 可変容量素子及びそれを備えた発振器

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110419163A (zh) * 2017-03-22 2019-11-05 索尼半导体解决方案公司 半导体装置及模块

Also Published As

Publication number Publication date
CN116325039A (zh) 2023-06-23
WO2022080253A1 (ja) 2022-04-21
EP4187604A1 (en) 2023-05-31
JPWO2022080253A1 (https=) 2022-04-21
US20230246040A1 (en) 2023-08-03
EP4187604A4 (en) 2024-07-31
JP7569536B2 (ja) 2024-10-18

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