JP7569536B2 - 可変電子素子、および回路装置 - Google Patents

可変電子素子、および回路装置 Download PDF

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Publication number
JP7569536B2
JP7569536B2 JP2022556910A JP2022556910A JP7569536B2 JP 7569536 B2 JP7569536 B2 JP 7569536B2 JP 2022556910 A JP2022556910 A JP 2022556910A JP 2022556910 A JP2022556910 A JP 2022556910A JP 7569536 B2 JP7569536 B2 JP 7569536B2
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electrode
source electrode
drain electrode
terminal
capacitor
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Japanese (ja)
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JPWO2022080253A1 (https=
JPWO2022080253A5 (https=
Inventor
毅明 宮迫
永輔 ▲徳▼光
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Japan Advanced Institute of Science and Technology
Murata Manufacturing Co Ltd
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Japan Advanced Institute of Science and Technology
Murata Manufacturing Co Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/80—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple passive components, e.g. resistors, capacitors or inductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/33—Thin- or thick-film capacitors (thin- or thick-film circuits; capacitors without a potential-jump or surface barrier specially adapted for integrated circuits, details thereof, multistep manufacturing processes therefor)
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F21/00—Variable inductances or transformers of the signal type
    • H01F21/12—Variable inductances or transformers of the signal type discontinuously variable, e.g. tapped
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/40—Structural combinations of fixed capacitors with other electric elements, the structure mainly consisting of a capacitor, e.g. RC combinations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/811—Combinations of field-effect devices and one or more diodes, capacitors or resistors
    • H10D84/817—Combinations of field-effect devices and resistors only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D88/00—Three-dimensional [3D] integrated devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/38—Multiple capacitors, i.e. structural combinations of fixed capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/20—Inductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/40—Resistors
    • H10D1/47—Resistors having no potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/692—Electrodes
    • H10D1/711—Electrodes having non-planar surfaces, e.g. formed by texturisation
    • H10D1/714—Electrodes having non-planar surfaces, e.g. formed by texturisation having horizontal extensions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/692—Electrodes
    • H10D1/711—Electrodes having non-planar surfaces, e.g. formed by texturisation
    • H10D1/716—Electrodes having non-planar surfaces, e.g. formed by texturisation having vertical extensions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/201—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates the substrates comprising an insulating layer on a semiconductor body, e.g. SOI

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Ceramic Capacitors (AREA)
  • Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Thin Film Transistor (AREA)
  • Filters And Equalizers (AREA)
JP2022556910A 2020-10-12 2021-10-08 可変電子素子、および回路装置 Active JP7569536B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2020172070 2020-10-12
JP2020172070 2020-10-12
PCT/JP2021/037331 WO2022080253A1 (ja) 2020-10-12 2021-10-08 可変電子素子、および回路装置

Publications (3)

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JPWO2022080253A1 JPWO2022080253A1 (https=) 2022-04-21
JPWO2022080253A5 JPWO2022080253A5 (https=) 2023-06-29
JP7569536B2 true JP7569536B2 (ja) 2024-10-18

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JP2022556910A Active JP7569536B2 (ja) 2020-10-12 2021-10-08 可変電子素子、および回路装置

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US (1) US20230246040A1 (https=)
EP (1) EP4187604A4 (https=)
JP (1) JP7569536B2 (https=)
CN (1) CN116325039B (https=)
WO (1) WO2022080253A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2025142588A1 (ja) * 2023-12-27 2025-07-03 株式会社村田製作所 発振器、およびその製造方法、情報処理装置

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040140528A1 (en) 2002-11-13 2004-07-22 Kim Cheon Soo Stacked variable inductor
JP2007013116A (ja) 2005-05-31 2007-01-18 Semiconductor Energy Lab Co Ltd 半導体装置及びその作製方法
JP2009147204A (ja) 2007-12-17 2009-07-02 Taiyo Yuden Co Ltd 可変キャパシタ
JP2010272815A (ja) 2009-05-25 2010-12-02 Renesas Electronics Corp 可変インダクタ
CN102570839A (zh) 2010-12-16 2012-07-11 西安高度电子科技有限公司 改变电容来改变谐振频率的llc谐振型dc-dc电源
JP2012256878A (ja) 2011-05-19 2012-12-27 Semiconductor Energy Lab Co Ltd 半導体装置
JP2013012730A (ja) 2011-06-01 2013-01-17 Semiconductor Energy Lab Co Ltd 半導体装置
JP2015144266A (ja) 2013-12-27 2015-08-06 株式会社半導体エネルギー研究所 半導体装置
WO2018173497A1 (ja) 2017-03-22 2018-09-27 ソニーセミコンダクタソリューションズ株式会社 半導体装置及びモジュール

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0555474A (ja) * 1991-08-23 1993-03-05 Mitsubishi Electric Corp 半導体装置
JP2002373829A (ja) 2001-06-15 2002-12-26 Murata Mfg Co Ltd 可変キャパシタ
DE10162263A1 (de) * 2001-12-18 2003-07-10 Infineon Technologies Ag Induktives Bauteil
CN204442303U (zh) * 2012-06-08 2015-07-01 株式会社村田制作所 可变电容元件、高频设备以及通信装置
US10741702B2 (en) * 2018-10-08 2020-08-11 Qualcomm Incorporated Thin-film variable metal-oxide-semiconductor (MOS) capacitor for passive-on-glass (POG) tunable capacitor
WO2021205695A1 (ja) * 2020-04-10 2021-10-14 株式会社村田製作所 可変容量素子及びそれを備えた発振器

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040140528A1 (en) 2002-11-13 2004-07-22 Kim Cheon Soo Stacked variable inductor
JP2007013116A (ja) 2005-05-31 2007-01-18 Semiconductor Energy Lab Co Ltd 半導体装置及びその作製方法
JP2009147204A (ja) 2007-12-17 2009-07-02 Taiyo Yuden Co Ltd 可変キャパシタ
JP2010272815A (ja) 2009-05-25 2010-12-02 Renesas Electronics Corp 可変インダクタ
CN102570839A (zh) 2010-12-16 2012-07-11 西安高度电子科技有限公司 改变电容来改变谐振频率的llc谐振型dc-dc电源
JP2012256878A (ja) 2011-05-19 2012-12-27 Semiconductor Energy Lab Co Ltd 半導体装置
JP2013012730A (ja) 2011-06-01 2013-01-17 Semiconductor Energy Lab Co Ltd 半導体装置
JP2015144266A (ja) 2013-12-27 2015-08-06 株式会社半導体エネルギー研究所 半導体装置
WO2018173497A1 (ja) 2017-03-22 2018-09-27 ソニーセミコンダクタソリューションズ株式会社 半導体装置及びモジュール

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Publication number Publication date
CN116325039A (zh) 2023-06-23
WO2022080253A1 (ja) 2022-04-21
EP4187604A1 (en) 2023-05-31
JPWO2022080253A1 (https=) 2022-04-21
US20230246040A1 (en) 2023-08-03
CN116325039B (zh) 2025-11-07
EP4187604A4 (en) 2024-07-31

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