JPWO2021239467A5 - - Google Patents
Download PDFInfo
- Publication number
- JPWO2021239467A5 JPWO2021239467A5 JP2022573235A JP2022573235A JPWO2021239467A5 JP WO2021239467 A5 JPWO2021239467 A5 JP WO2021239467A5 JP 2022573235 A JP2022573235 A JP 2022573235A JP 2022573235 A JP2022573235 A JP 2022573235A JP WO2021239467 A5 JPWO2021239467 A5 JP WO2021239467A5
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- composition
- patterned
- propanol
- weight
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP20176834.8 | 2020-05-27 | ||
| EP20176834 | 2020-05-27 | ||
| PCT/EP2021/062618 WO2021239467A1 (en) | 2020-05-27 | 2021-05-12 | Use of a composition consisting of ammonia and an alkanol for avoiding pattern collapse when treating patterned materials with line-space dimensions of 50 nm or below |
Publications (4)
| Publication Number | Publication Date |
|---|---|
| JP2023527538A JP2023527538A (ja) | 2023-06-29 |
| JPWO2021239467A5 true JPWO2021239467A5 (https=) | 2024-05-22 |
| JP2023527538A5 JP2023527538A5 (https=) | 2024-05-22 |
| JP7771095B2 JP7771095B2 (ja) | 2025-11-17 |
Family
ID=71069660
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2022573235A Active JP7771095B2 (ja) | 2020-05-27 | 2021-05-12 | 線状空間寸法が50nm以下のパターン材料を処理する際のパターン崩壊防止用のアンモニアとアルカノールとからなる組成物の使用法 |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US20230235252A1 (https=) |
| EP (1) | EP4158678A1 (https=) |
| JP (1) | JP7771095B2 (https=) |
| KR (1) | KR20230015920A (https=) |
| CN (1) | CN115668447A (https=) |
| IL (1) | IL298441A (https=) |
| TW (1) | TWI910168B (https=) |
| WO (1) | WO2021239467A1 (https=) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2022008306A1 (en) * | 2020-07-09 | 2022-01-13 | Basf Se | Composition comprising a siloxane and an alkane for avoiding pattern collapse when treating patterned materials with line-space dimensions of 50 nm or below |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7833957B2 (en) * | 2002-08-22 | 2010-11-16 | Daikin Industries, Ltd. | Removing solution |
| JP4190364B2 (ja) | 2003-08-26 | 2008-12-03 | 東京応化工業株式会社 | ホトリソグラフィー用リンス液および基板の処理方法 |
| US20080299487A1 (en) | 2007-05-31 | 2008-12-04 | Taiwan Semiconductor Manufacturing Company, Ltd. | Lithography material and lithography process |
| KR20130100297A (ko) | 2010-08-27 | 2013-09-10 | 어드밴스드 테크놀러지 머티리얼즈, 인코포레이티드 | 건조 동안의 높은 종횡비 구조물의 붕괴 방지 방법 |
| US9494700B2 (en) | 2014-06-13 | 2016-11-15 | Seabed Geosolutions B.V. | Node locks for marine deployment of autonomous seismic nodes |
| KR102700212B1 (ko) | 2017-11-03 | 2024-08-28 | 바스프 에스이 | 50 nm 이하의 라인-공간 치수를 갖는 패턴화된 재료를 처리할 때 패턴 붕괴를 회피하기 위한,실록산 유형의 첨가제를 포함하는 조성물의 용도 |
| US10964525B2 (en) * | 2017-12-19 | 2021-03-30 | Micron Technology, Inc. | Removing a sacrificial material via sublimation in forming a semiconductor |
| JP2021525388A (ja) | 2018-05-25 | 2021-09-24 | ビーエイエスエフ・ソシエタス・エウロパエアBasf Se | 50nm以下のライン間寸法を有するパターン化材料を処理したときのパターン倒壊を回避するための溶媒混合物を含む組成物を使用する方法 |
| KR102952695B1 (ko) * | 2019-04-09 | 2026-04-14 | 바스프 에스이 | 50 nm 이하의 라인 간격 치수를 갖는 패턴화 재료를 처리할 때 패턴 붕괴를 피하기 위한 암모니아 활성화된 실록산을 포함하는 조성물 |
-
2021
- 2021-05-12 CN CN202180037457.8A patent/CN115668447A/zh active Pending
- 2021-05-12 EP EP21724690.9A patent/EP4158678A1/en active Pending
- 2021-05-12 IL IL298441A patent/IL298441A/en unknown
- 2021-05-12 US US17/999,734 patent/US20230235252A1/en active Pending
- 2021-05-12 WO PCT/EP2021/062618 patent/WO2021239467A1/en not_active Ceased
- 2021-05-12 JP JP2022573235A patent/JP7771095B2/ja active Active
- 2021-05-12 KR KR1020227041088A patent/KR20230015920A/ko active Pending
- 2021-05-25 TW TW110118835A patent/TWI910168B/zh active
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN103365078B (zh) | 双敏感光刻胶的方法和组成 | |
| US8415091B2 (en) | Water mark defect prevention for immersion lithography | |
| US7790357B2 (en) | Method of forming fine pattern of semiconductor device | |
| TWI354871B (en) | Novel photoresist material and photolithography pr | |
| KR100639680B1 (ko) | 반도체 소자의 미세 패턴 형성방법 | |
| Kozawa et al. | Reconstruction of latent images from dose-pitch matrices of line width and edge roughness of chemically amplified resist for extreme ultraviolet lithography | |
| US20090246958A1 (en) | Method for removing residues from a patterned substrate | |
| EP1480081A2 (en) | Use of water soluble negative tone photoresist for producing closely spaced contact holes | |
| JP5218227B2 (ja) | パターン形成方法 | |
| JP2004527113A (ja) | 現像済みフォトレジスト層をすすぐための方法および蒸発性の溶液 | |
| US20100221672A1 (en) | Pattern forming method | |
| JP2010244041A (ja) | 二重露光プロセスにおけるレジスト・パターンの限界寸法変動を緩和する方法 | |
| JP5086283B2 (ja) | パターン形成方法及び半導体装置の製造方法 | |
| CN100385622C (zh) | 精细图形的形成方法 | |
| JP2013511502A (ja) | フォトレジスト組成物 | |
| KR100811431B1 (ko) | 반도체 소자의 제조 방법 | |
| KR100861172B1 (ko) | 반도체 소자의 미세패턴 형성방법 | |
| CN106168737B (zh) | 化学增幅光阻材料、共聚物及微影方法 | |
| US20050181313A1 (en) | Method for forming openings in a substrate using a packing and unpacking process | |
| JPWO2021239467A5 (https=) | ||
| CN103000497B (zh) | 形成刻蚀掩膜的方法 | |
| TW200428155A (en) | Positive tone lithography with carbon dioxide development systems | |
| Suzuki et al. | Novel EUV photoresist for sub-7 nm node | |
| JP2009194207A (ja) | パターン形成方法、半導体装置の製造方法及び半導体装置の製造装置 | |
| JP2003338452A (ja) | パターン形成方法 |