JPWO2021239467A5 - - Google Patents

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Publication number
JPWO2021239467A5
JPWO2021239467A5 JP2022573235A JP2022573235A JPWO2021239467A5 JP WO2021239467 A5 JPWO2021239467 A5 JP WO2021239467A5 JP 2022573235 A JP2022573235 A JP 2022573235A JP 2022573235 A JP2022573235 A JP 2022573235A JP WO2021239467 A5 JPWO2021239467 A5 JP WO2021239467A5
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JP
Japan
Prior art keywords
substrate
composition
patterned
propanol
weight
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JP2022573235A
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English (en)
Japanese (ja)
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JP7771095B2 (ja
JP2023527538A5 (https=
JP2023527538A (ja
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Priority claimed from PCT/EP2021/062618 external-priority patent/WO2021239467A1/en
Publication of JP2023527538A publication Critical patent/JP2023527538A/ja
Publication of JPWO2021239467A5 publication Critical patent/JPWO2021239467A5/ja
Publication of JP2023527538A5 publication Critical patent/JP2023527538A5/ja
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JP2022573235A 2020-05-27 2021-05-12 線状空間寸法が50nm以下のパターン材料を処理する際のパターン崩壊防止用のアンモニアとアルカノールとからなる組成物の使用法 Active JP7771095B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP20176834.8 2020-05-27
EP20176834 2020-05-27
PCT/EP2021/062618 WO2021239467A1 (en) 2020-05-27 2021-05-12 Use of a composition consisting of ammonia and an alkanol for avoiding pattern collapse when treating patterned materials with line-space dimensions of 50 nm or below

Publications (4)

Publication Number Publication Date
JP2023527538A JP2023527538A (ja) 2023-06-29
JPWO2021239467A5 true JPWO2021239467A5 (https=) 2024-05-22
JP2023527538A5 JP2023527538A5 (https=) 2024-05-22
JP7771095B2 JP7771095B2 (ja) 2025-11-17

Family

ID=71069660

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2022573235A Active JP7771095B2 (ja) 2020-05-27 2021-05-12 線状空間寸法が50nm以下のパターン材料を処理する際のパターン崩壊防止用のアンモニアとアルカノールとからなる組成物の使用法

Country Status (8)

Country Link
US (1) US20230235252A1 (https=)
EP (1) EP4158678A1 (https=)
JP (1) JP7771095B2 (https=)
KR (1) KR20230015920A (https=)
CN (1) CN115668447A (https=)
IL (1) IL298441A (https=)
TW (1) TWI910168B (https=)
WO (1) WO2021239467A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2022008306A1 (en) * 2020-07-09 2022-01-13 Basf Se Composition comprising a siloxane and an alkane for avoiding pattern collapse when treating patterned materials with line-space dimensions of 50 nm or below

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7833957B2 (en) * 2002-08-22 2010-11-16 Daikin Industries, Ltd. Removing solution
JP4190364B2 (ja) 2003-08-26 2008-12-03 東京応化工業株式会社 ホトリソグラフィー用リンス液および基板の処理方法
US20080299487A1 (en) 2007-05-31 2008-12-04 Taiwan Semiconductor Manufacturing Company, Ltd. Lithography material and lithography process
KR20130100297A (ko) 2010-08-27 2013-09-10 어드밴스드 테크놀러지 머티리얼즈, 인코포레이티드 건조 동안의 높은 종횡비 구조물의 붕괴 방지 방법
US9494700B2 (en) 2014-06-13 2016-11-15 Seabed Geosolutions B.V. Node locks for marine deployment of autonomous seismic nodes
KR102700212B1 (ko) 2017-11-03 2024-08-28 바스프 에스이 50 nm 이하의 라인-공간 치수를 갖는 패턴화된 재료를 처리할 때 패턴 붕괴를 회피하기 위한,실록산 유형의 첨가제를 포함하는 조성물의 용도
US10964525B2 (en) * 2017-12-19 2021-03-30 Micron Technology, Inc. Removing a sacrificial material via sublimation in forming a semiconductor
JP2021525388A (ja) 2018-05-25 2021-09-24 ビーエイエスエフ・ソシエタス・エウロパエアBasf Se 50nm以下のライン間寸法を有するパターン化材料を処理したときのパターン倒壊を回避するための溶媒混合物を含む組成物を使用する方法
KR102952695B1 (ko) * 2019-04-09 2026-04-14 바스프 에스이 50 nm 이하의 라인 간격 치수를 갖는 패턴화 재료를 처리할 때 패턴 붕괴를 피하기 위한 암모니아 활성화된 실록산을 포함하는 조성물

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