JP2023527538A5 - - Google Patents
Info
- Publication number
- JP2023527538A5 JP2023527538A5 JP2022573235A JP2022573235A JP2023527538A5 JP 2023527538 A5 JP2023527538 A5 JP 2023527538A5 JP 2022573235 A JP2022573235 A JP 2022573235A JP 2022573235 A JP2022573235 A JP 2022573235A JP 2023527538 A5 JP2023527538 A5 JP 2023527538A5
- Authority
- JP
- Japan
Links
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP20176834.8 | 2020-05-27 | ||
| EP20176834 | 2020-05-27 | ||
| PCT/EP2021/062618 WO2021239467A1 (en) | 2020-05-27 | 2021-05-12 | Use of a composition consisting of ammonia and an alkanol for avoiding pattern collapse when treating patterned materials with line-space dimensions of 50 nm or below |
Publications (4)
| Publication Number | Publication Date |
|---|---|
| JP2023527538A JP2023527538A (ja) | 2023-06-29 |
| JPWO2021239467A5 JPWO2021239467A5 (https=) | 2024-05-22 |
| JP2023527538A5 true JP2023527538A5 (https=) | 2024-05-22 |
| JP7771095B2 JP7771095B2 (ja) | 2025-11-17 |
Family
ID=71069660
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2022573235A Active JP7771095B2 (ja) | 2020-05-27 | 2021-05-12 | 線状空間寸法が５０ｎｍ以下のパターン材料を処理する際のパターン崩壊防止用のアンモニアとアルカノールとからなる組成物の使用法 |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US20230235252A1 (https=) |
| EP (1) | EP4158678A1 (https=) |
| JP (1) | JP7771095B2 (https=) |
| KR (1) | KR20230015920A (https=) |
| CN (1) | CN115668447A (https=) |
| IL (1) | IL298441A (https=) |
| TW (1) | TWI910168B (https=) |
| WO (1) | WO2021239467A1 (https=) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2022008306A1 (en) * | 2020-07-09 | 2022-01-13 | Basf Se | Composition comprising a siloxane and an alkane for avoiding pattern collapse when treating patterned materials with line-space dimensions of 50 nm or below |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7833957B2 (en) * | 2002-08-22 | 2010-11-16 | Daikin Industries, Ltd. | Removing solution |
| JP4190364B2 (ja) | 2003-08-26 | 2008-12-03 | 東京応化工業株式会社 | ホトリソグラフィー用リンス液および基板の処理方法 |
| US20080299487A1 (en) | 2007-05-31 | 2008-12-04 | Taiwan Semiconductor Manufacturing Company, Ltd. | Lithography material and lithography process |
| KR20130100297A (ko) | 2010-08-27 | 2013-09-10 | 어드밴스드 테크놀러지 머티리얼즈, 인코포레이티드 | 건조 동안의 높은 종횡비 구조물의 붕괴 방지 방법 |
| US9494700B2 (en) | 2014-06-13 | 2016-11-15 | Seabed Geosolutions B.V. | Node locks for marine deployment of autonomous seismic nodes |
| KR102700212B1 (ko) | 2017-11-03 | 2024-08-28 | 바스프 에스이 | 50 nm 이하의 라인-공간 치수를 갖는 패턴화된 재료를 처리할 때 패턴 붕괴를 회피하기 위한，실록산 유형의 첨가제를 포함하는 조성물의 용도 |
| US10964525B2 (en) * | 2017-12-19 | 2021-03-30 | Micron Technology, Inc. | Removing a sacrificial material via sublimation in forming a semiconductor |
| JP2021525388A (ja) | 2018-05-25 | 2021-09-24 | ビーエイエスエフ・ソシエタス・エウロパエアＢａｓｆ Ｓｅ | ５０ｎｍ以下のライン間寸法を有するパターン化材料を処理したときのパターン倒壊を回避するための溶媒混合物を含む組成物を使用する方法 |
| KR102952695B1 (ko) * | 2019-04-09 | 2026-04-14 | 바스프 에스이 | 50 nm 이하의 라인 간격 치수를 갖는 패턴화 재료를 처리할 때 패턴 붕괴를 피하기 위한 암모니아 활성화된 실록산을 포함하는 조성물 |
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2021
- 2021-05-12 CN CN202180037457.8A patent/CN115668447A/zh active Pending
- 2021-05-12 EP EP21724690.9A patent/EP4158678A1/en active Pending
- 2021-05-12 IL IL298441A patent/IL298441A/en unknown
- 2021-05-12 US US17/999,734 patent/US20230235252A1/en active Pending
- 2021-05-12 WO PCT/EP2021/062618 patent/WO2021239467A1/en not_active Ceased
- 2021-05-12 JP JP2022573235A patent/JP7771095B2/ja active Active
- 2021-05-12 KR KR1020227041088A patent/KR20230015920A/ko active Pending
- 2021-05-25 TW TW110118835A patent/TWI910168B/zh active