TWI910168B - 將由氨及烷醇組成的組成物用來避免當以５０奈米或以下的線距尺寸處理圖案化材料時圖案塌陷的用途 - Google Patents

將由氨及烷醇組成的組成物用來避免當以５０奈米或以下的線距尺寸處理圖案化材料時圖案塌陷的用途

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Publication number
TWI910168B
TWI910168B TW110118835A TW110118835A TWI910168B TW I910168 B TWI910168 B TW I910168B TW 110118835 A TW110118835 A TW 110118835A TW 110118835 A TW110118835 A TW 110118835A TW I910168 B TWI910168 B TW I910168B
Authority
TW
Taiwan
Prior art keywords
substrate
ammonia
patterned
material layer
composition
Prior art date
Application number
TW110118835A
Other languages
English (en)
Chinese (zh)
Other versions
TW202144555A (zh
Inventor
高齊嶽
沈瑪莉
丹尼爾 羅福勒
安卓亞斯 克里普
哈奇 歐斯曼 古芬克
Original Assignee
德商巴斯夫歐洲公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 德商巴斯夫歐洲公司 filed Critical 德商巴斯夫歐洲公司
Publication of TW202144555A publication Critical patent/TW202144555A/zh
Application granted granted Critical
Publication of TWI910168B publication Critical patent/TWI910168B/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/02—Inorganic compounds
    • C11D7/04—Water-soluble compounds
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00841—Cleaning during or after manufacture
    • B81C1/00849—Cleaning during or after manufacture during manufacture
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00912—Treatments or methods for avoiding stiction of flexible or moving parts of MEMS
    • B81C1/0092—For avoiding stiction during the manufacturing process of the device, e.g. during wet etching
    • B81C1/00928—Eliminating or avoiding remaining moisture after the wet etch release of the movable structure
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G18/00—Polymeric products of isocyanates or isothiocyanates
    • C08G18/06—Polymeric products of isocyanates or isothiocyanates with compounds having active hydrogen
    • C08G18/28—Polymeric products of isocyanates or isothiocyanates with compounds having active hydrogen characterised by the compounds used containing active hydrogen
    • C08G18/40—High-molecular-weight compounds
    • C08G18/48—Polyethers
    • C08G18/4833—Polyethers containing oxyethylene units
    • C08G18/4837—Polyethers containing oxyethylene units and other oxyalkylene units
    • C08G18/4841—Polyethers containing oxyethylene units and other oxyalkylene units containing oxyethylene end groups
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/02—Inorganic compounds
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/26—Organic compounds containing oxygen
    • C11D7/261—Alcohols; Phenols
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/50—Solvents
    • C11D7/5004—Organic solvents
    • C11D7/5022—Organic solvents containing oxygen
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/20—Cleaning during device manufacture
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/20—Cleaning during device manufacture
    • H10P70/23—Cleaning during device manufacture during, before or after processing of insulating materials
    • H10P70/234—Cleaning during device manufacture during, before or after processing of insulating materials the processing being the formation of vias or contact holes
    • A—HUMAN NECESSITIES
    • A46—BRUSHWARE
    • A46B—BRUSHES
    • A46B2200/00—Brushes characterized by their functions, uses or applications
    • A46B2200/10—For human or animal care
    • A46B2200/104—Hair brush
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G2110/00—Foam properties
    • C08G2110/0083—Foam properties prepared using water as the sole blowing agent
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
    • C11D2111/10—Objects to be cleaned
    • C11D2111/14—Hard surfaces
    • C11D2111/22—Electronic devices, e.g. PCBs or semiconductors

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Wood Science & Technology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Health & Medical Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Inorganic Chemistry (AREA)
  • Emergency Medicine (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Electron Beam Exposure (AREA)
TW110118835A 2020-05-27 2021-05-25 將由氨及烷醇組成的組成物用來避免當以５０奈米或以下的線距尺寸處理圖案化材料時圖案塌陷的用途 TWI910168B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP20176834.8 2020-05-27
EP20176834 2020-05-27

Publications (2)

Publication Number Publication Date
TW202144555A TW202144555A (zh) 2021-12-01
TWI910168B true TWI910168B (zh) 2026-01-01

Family

ID=71069660

Family Applications (1)

Application Number Title Priority Date Filing Date
TW110118835A TWI910168B (zh) 2020-05-27 2021-05-25 將由氨及烷醇組成的組成物用來避免當以５０奈米或以下的線距尺寸處理圖案化材料時圖案塌陷的用途

Country Status (8)

Country Link
US (1) US20230235252A1 (https=)
EP (1) EP4158678A1 (https=)
JP (1) JP7771095B2 (https=)
KR (1) KR20230015920A (https=)
CN (1) CN115668447A (https=)
IL (1) IL298441A (https=)
TW (1) TWI910168B (https=)
WO (1) WO2021239467A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2022008306A1 (en) * 2020-07-09 2022-01-13 Basf Se Composition comprising a siloxane and an alkane for avoiding pattern collapse when treating patterned materials with line-space dimensions of 50 nm or below

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201232647A (en) * 2010-08-27 2012-08-01 Advanced Tech Materials Method for preventing the collapse of high aspect ratio structures during drying
TW201936276A (zh) * 2017-12-19 2019-09-16 美商美光科技公司 形成半導體中之昇華
TW202003826A (zh) * 2018-05-25 2020-01-16 德商巴斯夫歐洲公司 包含溶劑混合物之組成物當處理具有50 nm或小於50 nm之線-空間尺寸的圖案化材料時避免圖案塌陷之用途

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7833957B2 (en) * 2002-08-22 2010-11-16 Daikin Industries, Ltd. Removing solution
JP4190364B2 (ja) 2003-08-26 2008-12-03 東京応化工業株式会社 ホトリソグラフィー用リンス液および基板の処理方法
US20080299487A1 (en) 2007-05-31 2008-12-04 Taiwan Semiconductor Manufacturing Company, Ltd. Lithography material and lithography process
US9494700B2 (en) 2014-06-13 2016-11-15 Seabed Geosolutions B.V. Node locks for marine deployment of autonomous seismic nodes
KR102700212B1 (ko) 2017-11-03 2024-08-28 바스프 에스이 50 nm 이하의 라인-공간 치수를 갖는 패턴화된 재료를 처리할 때 패턴 붕괴를 회피하기 위한，실록산 유형의 첨가제를 포함하는 조성물의 용도
KR102952695B1 (ko) * 2019-04-09 2026-04-14 바스프 에스이 50 nm 이하의 라인 간격 치수를 갖는 패턴화 재료를 처리할 때 패턴 붕괴를 피하기 위한 암모니아 활성화된 실록산을 포함하는 조성물

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201232647A (en) * 2010-08-27 2012-08-01 Advanced Tech Materials Method for preventing the collapse of high aspect ratio structures during drying
TW201936276A (zh) * 2017-12-19 2019-09-16 美商美光科技公司 形成半導體中之昇華
TW202003826A (zh) * 2018-05-25 2020-01-16 德商巴斯夫歐洲公司 包含溶劑混合物之組成物當處理具有50 nm或小於50 nm之線-空間尺寸的圖案化材料時避免圖案塌陷之用途

Also Published As

Publication number Publication date
US20230235252A1 (en) 2023-07-27
WO2021239467A1 (en) 2021-12-02
JP7771095B2 (ja) 2025-11-17
IL298441A (en) 2023-01-01
CN115668447A (zh) 2023-01-31
EP4158678A1 (en) 2023-04-05
KR20230015920A (ko) 2023-01-31
TW202144555A (zh) 2021-12-01
JP2023527538A (ja) 2023-06-29

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