JP7771095B2 - 線状空間寸法が５０ｎｍ以下のパターン材料を処理する際のパターン崩壊防止用のアンモニアとアルカノールとからなる組成物の使用法 - Google Patents

線状空間寸法が５０ｎｍ以下のパターン材料を処理する際のパターン崩壊防止用のアンモニアとアルカノールとからなる組成物の使用法

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Publication number
JP7771095B2
JP7771095B2 JP2022573235A JP2022573235A JP7771095B2 JP 7771095 B2 JP7771095 B2 JP 7771095B2 JP 2022573235 A JP2022573235 A JP 2022573235A JP 2022573235 A JP2022573235 A JP 2022573235A JP 7771095 B2 JP7771095 B2 JP 7771095B2
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Japan
Prior art keywords
composition
substrate
ammonia
less
patterned
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JP2022573235A
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English (en)
Japanese (ja)
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JPWO2021239467A5 (https=
JP2023527538A5 (https=
JP2023527538A (ja
Inventor
ユエー カオ，チー
チン シェン，メイ
レッフラー，ダニエル
クリップ，アンドレアス
オスマン ギュフェンク，ハツィ
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BASF SE
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BASF SE
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Publication of JP2023527538A5 publication Critical patent/JP2023527538A5/ja
Application granted granted Critical
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Classifications

    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/02—Inorganic compounds
    • C11D7/04—Water-soluble compounds
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/20—Cleaning during device manufacture
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00841—Cleaning during or after manufacture
    • B81C1/00849—Cleaning during or after manufacture during manufacture
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00912—Treatments or methods for avoiding stiction of flexible or moving parts of MEMS
    • B81C1/0092—For avoiding stiction during the manufacturing process of the device, e.g. during wet etching
    • B81C1/00928—Eliminating or avoiding remaining moisture after the wet etch release of the movable structure
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G18/00—Polymeric products of isocyanates or isothiocyanates
    • C08G18/06—Polymeric products of isocyanates or isothiocyanates with compounds having active hydrogen
    • C08G18/28—Polymeric products of isocyanates or isothiocyanates with compounds having active hydrogen characterised by the compounds used containing active hydrogen
    • C08G18/40—High-molecular-weight compounds
    • C08G18/48—Polyethers
    • C08G18/4833—Polyethers containing oxyethylene units
    • C08G18/4837—Polyethers containing oxyethylene units and other oxyalkylene units
    • C08G18/4841—Polyethers containing oxyethylene units and other oxyalkylene units containing oxyethylene end groups
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/02—Inorganic compounds
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/26—Organic compounds containing oxygen
    • C11D7/261—Alcohols; Phenols
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/50—Solvents
    • C11D7/5004—Organic solvents
    • C11D7/5022—Organic solvents containing oxygen
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/20—Cleaning during device manufacture
    • H10P70/23—Cleaning during device manufacture during, before or after processing of insulating materials
    • H10P70/234—Cleaning during device manufacture during, before or after processing of insulating materials the processing being the formation of vias or contact holes
    • A—HUMAN NECESSITIES
    • A46—BRUSHWARE
    • A46B—BRUSHES
    • A46B2200/00—Brushes characterized by their functions, uses or applications
    • A46B2200/10—For human or animal care
    • A46B2200/104—Hair brush
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G2110/00—Foam properties
    • C08G2110/0083—Foam properties prepared using water as the sole blowing agent
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
    • C11D2111/10—Objects to be cleaned
    • C11D2111/14—Hard surfaces
    • C11D2111/22—Electronic devices, e.g. PCBs or semiconductors

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Wood Science & Technology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Health & Medical Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Inorganic Chemistry (AREA)
  • Emergency Medicine (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Electron Beam Exposure (AREA)
JP2022573235A 2020-05-27 2021-05-12 線状空間寸法が５０ｎｍ以下のパターン材料を処理する際のパターン崩壊防止用のアンモニアとアルカノールとからなる組成物の使用法 Active JP7771095B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP20176834.8 2020-05-27
EP20176834 2020-05-27
PCT/EP2021/062618 WO2021239467A1 (en) 2020-05-27 2021-05-12 Use of a composition consisting of ammonia and an alkanol for avoiding pattern collapse when treating patterned materials with line-space dimensions of 50 nm or below

Publications (4)

Publication Number Publication Date
JP2023527538A JP2023527538A (ja) 2023-06-29
JPWO2021239467A5 JPWO2021239467A5 (https=) 2024-05-22
JP2023527538A5 JP2023527538A5 (https=) 2024-05-22
JP7771095B2 true JP7771095B2 (ja) 2025-11-17

Family

ID=71069660

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2022573235A Active JP7771095B2 (ja) 2020-05-27 2021-05-12 線状空間寸法が５０ｎｍ以下のパターン材料を処理する際のパターン崩壊防止用のアンモニアとアルカノールとからなる組成物の使用法

Country Status (8)

Country Link
US (1) US20230235252A1 (https=)
EP (1) EP4158678A1 (https=)
JP (1) JP7771095B2 (https=)
KR (1) KR20230015920A (https=)
CN (1) CN115668447A (https=)
IL (1) IL298441A (https=)
TW (1) TWI910168B (https=)
WO (1) WO2021239467A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2022008306A1 (en) * 2020-07-09 2022-01-13 Basf Se Composition comprising a siloxane and an alkane for avoiding pattern collapse when treating patterned materials with line-space dimensions of 50 nm or below

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005070118A (ja) 2003-08-26 2005-03-17 Tokyo Ohka Kogyo Co Ltd ホトリソグラフィー用リンス液および基板の処理方法
JP2013537724A (ja) 2010-08-27 2013-10-03 アドバンスド テクノロジー マテリアルズ，インコーポレイテッド 乾燥間の高アスペクト比構造崩壊を防止する方法
WO2019224032A1 (en) 2018-05-25 2019-11-28 Basf Se Use of compositions comprising a solvent mixture for avoiding pattern collapse when treating patterned materials with line-space dimensions of 50 nm or below

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7833957B2 (en) * 2002-08-22 2010-11-16 Daikin Industries, Ltd. Removing solution
US20080299487A1 (en) 2007-05-31 2008-12-04 Taiwan Semiconductor Manufacturing Company, Ltd. Lithography material and lithography process
US9494700B2 (en) 2014-06-13 2016-11-15 Seabed Geosolutions B.V. Node locks for marine deployment of autonomous seismic nodes
KR102700212B1 (ko) 2017-11-03 2024-08-28 바스프 에스이 50 nm 이하의 라인-공간 치수를 갖는 패턴화된 재료를 처리할 때 패턴 붕괴를 회피하기 위한，실록산 유형의 첨가제를 포함하는 조성물의 용도
US10964525B2 (en) * 2017-12-19 2021-03-30 Micron Technology, Inc. Removing a sacrificial material via sublimation in forming a semiconductor
KR102952695B1 (ko) * 2019-04-09 2026-04-14 바스프 에스이 50 nm 이하의 라인 간격 치수를 갖는 패턴화 재료를 처리할 때 패턴 붕괴를 피하기 위한 암모니아 활성화된 실록산을 포함하는 조성물

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005070118A (ja) 2003-08-26 2005-03-17 Tokyo Ohka Kogyo Co Ltd ホトリソグラフィー用リンス液および基板の処理方法
JP2013537724A (ja) 2010-08-27 2013-10-03 アドバンスド テクノロジー マテリアルズ，インコーポレイテッド 乾燥間の高アスペクト比構造崩壊を防止する方法
WO2019224032A1 (en) 2018-05-25 2019-11-28 Basf Se Use of compositions comprising a solvent mixture for avoiding pattern collapse when treating patterned materials with line-space dimensions of 50 nm or below

Also Published As

Publication number Publication date
US20230235252A1 (en) 2023-07-27
WO2021239467A1 (en) 2021-12-02
IL298441A (en) 2023-01-01
CN115668447A (zh) 2023-01-31
EP4158678A1 (en) 2023-04-05
KR20230015920A (ko) 2023-01-31
TWI910168B (zh) 2026-01-01
TW202144555A (zh) 2021-12-01
JP2023527538A (ja) 2023-06-29

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