JPWO2021229734A5 - - Google Patents
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- Publication number
- JPWO2021229734A5 JPWO2021229734A5 JP2022522420A JP2022522420A JPWO2021229734A5 JP WO2021229734 A5 JPWO2021229734 A5 JP WO2021229734A5 JP 2022522420 A JP2022522420 A JP 2022522420A JP 2022522420 A JP2022522420 A JP 2022522420A JP WO2021229734 A5 JPWO2021229734 A5 JP WO2021229734A5
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- semiconductor device
- semiconductor
- layer
- bonding
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000004065 semiconductor Substances 0.000 claims description 42
- 239000000758 substrate Substances 0.000 claims description 21
- 239000000470 constituent Substances 0.000 claims description 8
- 150000001875 compounds Chemical class 0.000 claims description 7
- 150000004767 nitrides Chemical class 0.000 claims description 5
- 239000011148 porous material Substances 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 claims 10
- 239000000126 substance Substances 0.000 claims 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 2
- 238000000034 method Methods 0.000 claims 2
- 229910052710 silicon Inorganic materials 0.000 claims 2
- 239000010703 silicon Substances 0.000 claims 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims 2
- 229910010271 silicon carbide Inorganic materials 0.000 claims 2
- 229910000807 Ga alloy Inorganic materials 0.000 claims 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims 1
- 229910045601 alloy Inorganic materials 0.000 claims 1
- 239000000956 alloy Substances 0.000 claims 1
- 229910052733 gallium Inorganic materials 0.000 claims 1
- 150000002259 gallium compounds Chemical class 0.000 claims 1
- 230000001678 irradiating effect Effects 0.000 claims 1
- 230000001590 oxidative effect Effects 0.000 claims 1
- 239000000463 material Substances 0.000 description 1
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/JP2020/019180 WO2021229734A1 (ja) | 2020-05-14 | 2020-05-14 | 半導体装置および半導体装置の製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JPWO2021229734A1 JPWO2021229734A1 (https=) | 2021-11-18 |
| JPWO2021229734A5 true JPWO2021229734A5 (https=) | 2022-08-10 |
| JP7325624B2 JP7325624B2 (ja) | 2023-08-14 |
Family
ID=78525514
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2022522420A Active JP7325624B2 (ja) | 2020-05-14 | 2020-05-14 | 半導体装置および半導体装置の製造方法 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US12512648B2 (https=) |
| JP (1) | JP7325624B2 (https=) |
| GB (1) | GB2609786B (https=) |
| WO (1) | WO2021229734A1 (https=) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2023170449A (ja) * | 2022-05-19 | 2023-12-01 | 浜松ホトニクス株式会社 | 接合方法、半導体デバイスの製造方法及び半導体デバイス |
| WO2025017863A1 (ja) * | 2023-07-19 | 2025-01-23 | 三菱電機株式会社 | 半導体装置および半導体装置の製造方法 |
| JP2025084380A (ja) * | 2023-11-22 | 2025-06-03 | 住友金属鉱山株式会社 | 接合半導体基板および接合半導体基板の製造方法 |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0963912A (ja) * | 1995-08-18 | 1997-03-07 | Hoya Corp | 貼り合わせ基板製造方法 |
| US7799675B2 (en) * | 2003-06-24 | 2010-09-21 | Sang-Yun Lee | Bonded semiconductor structure and method of fabricating the same |
| JP2008022866A (ja) | 2004-10-28 | 2008-02-07 | Stream Co Ltd | 彫刻真珠及びその加飾方法 |
| JP4650224B2 (ja) | 2004-11-19 | 2011-03-16 | 日亜化学工業株式会社 | 電界効果トランジスタ |
| US20080026248A1 (en) * | 2006-01-27 | 2008-01-31 | Shekar Balagopal | Environmental and Thermal Barrier Coating to Provide Protection in Various Environments |
| JP2012099710A (ja) * | 2010-11-04 | 2012-05-24 | Ushio Inc | 基板と結晶層の接着方法および接着されたワーク |
| JP6245791B2 (ja) * | 2012-03-27 | 2017-12-13 | 日亜化学工業株式会社 | 縦型窒化物半導体素子およびその製造方法 |
| KR20140012445A (ko) | 2012-07-20 | 2014-02-03 | 삼성전자주식회사 | 질화물계 반도체 소자 및 이의 제조방법 |
| FR3040108B1 (fr) * | 2015-08-12 | 2017-08-11 | Commissariat Energie Atomique | Procede de fabrication d'une structure semi-conductrice avec collage direct temporaire exploitant une couche poreuse |
| JP2017139322A (ja) * | 2016-02-03 | 2017-08-10 | 旭硝子株式会社 | デバイス基板の製造方法、及び積層体 |
| JP6431013B2 (ja) * | 2016-09-21 | 2018-11-28 | シャープ株式会社 | 窒化アルミニウム系半導体深紫外発光素子 |
| US10074567B2 (en) * | 2016-10-21 | 2018-09-11 | QROMIS, Inc. | Method and system for vertical integration of elemental and compound semiconductors |
-
2020
- 2020-05-14 WO PCT/JP2020/019180 patent/WO2021229734A1/ja not_active Ceased
- 2020-05-14 GB GB2215350.6A patent/GB2609786B/en active Active
- 2020-05-14 US US17/915,104 patent/US12512648B2/en active Active
- 2020-05-14 JP JP2022522420A patent/JP7325624B2/ja active Active
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