JPWO2021229734A1 - - Google Patents
Info
- Publication number
- JPWO2021229734A1 JPWO2021229734A1 JP2022522420A JP2022522420A JPWO2021229734A1 JP WO2021229734 A1 JPWO2021229734 A1 JP WO2021229734A1 JP 2022522420 A JP2022522420 A JP 2022522420A JP 2022522420 A JP2022522420 A JP 2022522420A JP WO2021229734 A1 JPWO2021229734 A1 JP WO2021229734A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
- H01S5/32341—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm blue laser based on GaN or GaP
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W20/00—Interconnections in chips, wafers or substrates
- H10W20/01—Manufacture or treatment
- H10W20/021—Manufacture or treatment of interconnections within wafers or substrates
- H10W20/023—Manufacture or treatment of interconnections within wafers or substrates the interconnections being through-semiconductor vias
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
- H01S5/021—Silicon based substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
- H01S5/0217—Removal of the substrate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W20/00—Interconnections in chips, wafers or substrates
- H10W20/01—Manufacture or treatment
- H10W20/021—Manufacture or treatment of interconnections within wafers or substrates
- H10W20/023—Manufacture or treatment of interconnections within wafers or substrates the interconnections being through-semiconductor vias
- H10W20/0234—Manufacture or treatment of interconnections within wafers or substrates the interconnections being through-semiconductor vias comprising etching via holes that stop on pads or on electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W20/00—Interconnections in chips, wafers or substrates
- H10W20/01—Manufacture or treatment
- H10W20/021—Manufacture or treatment of interconnections within wafers or substrates
- H10W20/023—Manufacture or treatment of interconnections within wafers or substrates the interconnections being through-semiconductor vias
- H10W20/0242—Manufacture or treatment of interconnections within wafers or substrates the interconnections being through-semiconductor vias comprising etching via holes from the back sides of the chips, wafers or substrates
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W20/00—Interconnections in chips, wafers or substrates
- H10W20/20—Interconnections within wafers or substrates, e.g. through-silicon vias [TSV]
- H10W20/211—Through-semiconductor vias, e.g. TSVs
- H10W20/212—Top-view shapes or dispositions, e.g. top-view layouts of the vias
- H10W20/2125—Top-view shapes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/071—Connecting or disconnecting
- H10W72/073—Connecting or disconnecting of die-attach connectors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
- H10P95/11—Separation of active layers from substrates
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Recrystallisation Techniques (AREA)
- Junction Field-Effect Transistors (AREA)
- Led Devices (AREA)
- Semiconductor Lasers (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/JP2020/019180 WO2021229734A1 (ja) | 2020-05-14 | 2020-05-14 | 半導体装置および半導体装置の製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JPWO2021229734A1 true JPWO2021229734A1 (https=) | 2021-11-18 |
| JPWO2021229734A5 JPWO2021229734A5 (https=) | 2022-08-10 |
| JP7325624B2 JP7325624B2 (ja) | 2023-08-14 |
Family
ID=78525514
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2022522420A Active JP7325624B2 (ja) | 2020-05-14 | 2020-05-14 | 半導体装置および半導体装置の製造方法 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US12512648B2 (https=) |
| JP (1) | JP7325624B2 (https=) |
| GB (1) | GB2609786B (https=) |
| WO (1) | WO2021229734A1 (https=) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2023170449A (ja) * | 2022-05-19 | 2023-12-01 | 浜松ホトニクス株式会社 | 接合方法、半導体デバイスの製造方法及び半導体デバイス |
| WO2025017863A1 (ja) * | 2023-07-19 | 2025-01-23 | 三菱電機株式会社 | 半導体装置および半導体装置の製造方法 |
| JP2025084380A (ja) * | 2023-11-22 | 2025-06-03 | 住友金属鉱山株式会社 | 接合半導体基板および接合半導体基板の製造方法 |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0963912A (ja) * | 1995-08-18 | 1997-03-07 | Hoya Corp | 貼り合わせ基板製造方法 |
| JP2012099710A (ja) * | 2010-11-04 | 2012-05-24 | Ushio Inc | 基板と結晶層の接着方法および接着されたワーク |
| JP2017139322A (ja) * | 2016-02-03 | 2017-08-10 | 旭硝子株式会社 | デバイス基板の製造方法、及び積層体 |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7799675B2 (en) * | 2003-06-24 | 2010-09-21 | Sang-Yun Lee | Bonded semiconductor structure and method of fabricating the same |
| JP2008022866A (ja) | 2004-10-28 | 2008-02-07 | Stream Co Ltd | 彫刻真珠及びその加飾方法 |
| JP4650224B2 (ja) | 2004-11-19 | 2011-03-16 | 日亜化学工業株式会社 | 電界効果トランジスタ |
| US20080026248A1 (en) * | 2006-01-27 | 2008-01-31 | Shekar Balagopal | Environmental and Thermal Barrier Coating to Provide Protection in Various Environments |
| JP6245791B2 (ja) * | 2012-03-27 | 2017-12-13 | 日亜化学工業株式会社 | 縦型窒化物半導体素子およびその製造方法 |
| KR20140012445A (ko) | 2012-07-20 | 2014-02-03 | 삼성전자주식회사 | 질화물계 반도체 소자 및 이의 제조방법 |
| FR3040108B1 (fr) * | 2015-08-12 | 2017-08-11 | Commissariat Energie Atomique | Procede de fabrication d'une structure semi-conductrice avec collage direct temporaire exploitant une couche poreuse |
| JP6431013B2 (ja) * | 2016-09-21 | 2018-11-28 | シャープ株式会社 | 窒化アルミニウム系半導体深紫外発光素子 |
| US10074567B2 (en) * | 2016-10-21 | 2018-09-11 | QROMIS, Inc. | Method and system for vertical integration of elemental and compound semiconductors |
-
2020
- 2020-05-14 WO PCT/JP2020/019180 patent/WO2021229734A1/ja not_active Ceased
- 2020-05-14 GB GB2215350.6A patent/GB2609786B/en active Active
- 2020-05-14 US US17/915,104 patent/US12512648B2/en active Active
- 2020-05-14 JP JP2022522420A patent/JP7325624B2/ja active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0963912A (ja) * | 1995-08-18 | 1997-03-07 | Hoya Corp | 貼り合わせ基板製造方法 |
| JP2012099710A (ja) * | 2010-11-04 | 2012-05-24 | Ushio Inc | 基板と結晶層の接着方法および接着されたワーク |
| JP2017139322A (ja) * | 2016-02-03 | 2017-08-10 | 旭硝子株式会社 | デバイス基板の製造方法、及び積層体 |
Also Published As
| Publication number | Publication date |
|---|---|
| GB202215350D0 (en) | 2022-11-30 |
| GB2609786A (en) | 2023-02-15 |
| US12512648B2 (en) | 2025-12-30 |
| US20230155351A1 (en) | 2023-05-18 |
| WO2021229734A1 (ja) | 2021-11-18 |
| JP7325624B2 (ja) | 2023-08-14 |
| GB2609786B (en) | 2025-05-14 |
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