JPWO2021214866A1 - - Google Patents

Info

Publication number
JPWO2021214866A1
JPWO2021214866A1 JP2022516512A JP2022516512A JPWO2021214866A1 JP WO2021214866 A1 JPWO2021214866 A1 JP WO2021214866A1 JP 2022516512 A JP2022516512 A JP 2022516512A JP 2022516512 A JP2022516512 A JP 2022516512A JP WO2021214866 A1 JPWO2021214866 A1 JP WO2021214866A1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2022516512A
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPWO2021214866A1 publication Critical patent/JPWO2021214866A1/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/80—Heterojunction BJTs
    • H10D10/821—Vertical heterojunction BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/01—Manufacture or treatment
    • H10D10/021—Manufacture or treatment of heterojunction BJTs [HBT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/80—Heterojunction BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/133—Emitter regions of BJTs
    • H10D62/136—Emitter regions of BJTs of heterojunction BJTs 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/82—Heterojunctions
    • H10D62/824—Heterojunctions comprising only Group III-V materials heterojunctions, e.g. GaN/AlGaN heterojunctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/177—Base regions of bipolar transistors, e.g. BJTs or IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
JP2022516512A 2020-04-21 2020-04-21 Pending JPWO2021214866A1 (https=)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2020/017177 WO2021214866A1 (ja) 2020-04-21 2020-04-21 ヘテロ接合バイポーラトランジスタおよびその製造方法

Publications (1)

Publication Number Publication Date
JPWO2021214866A1 true JPWO2021214866A1 (https=) 2021-10-28

Family

ID=78270429

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2022516512A Pending JPWO2021214866A1 (https=) 2020-04-21 2020-04-21

Country Status (3)

Country Link
US (1) US20230163193A1 (https=)
JP (1) JPWO2021214866A1 (https=)
WO (1) WO2021214866A1 (https=)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000082709A (ja) * 1998-09-04 2000-03-21 Toshiba Corp 半導体装置
JP2001035840A (ja) * 1999-07-26 2001-02-09 Matsushita Electric Ind Co Ltd エッチング方法および半導体装置の製造方法
JP2005123214A (ja) * 2003-10-14 2005-05-12 Anritsu Corp ヘテロ接合バイポーラトランジスタの製造方法
JP2015126176A (ja) * 2013-12-27 2015-07-06 日本電信電話株式会社 ヘテロ接合バイポーラトランジスタおよびその製造方法

Family Cites Families (35)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0240307B1 (en) * 1986-04-01 1993-12-22 Matsushita Electric Industrial Co., Ltd. Bipolar transistor and method of producing the same
US5001534A (en) * 1989-07-11 1991-03-19 At&T Bell Laboratories Heterojunction bipolar transistor
JP3210657B2 (ja) * 1989-11-27 2001-09-17 株式会社日立製作所 ヘテロ接合バイポーラトランジスタ
EP0562272A3 (en) * 1992-03-23 1994-05-25 Texas Instruments Inc Microwave heterojunction bipolar transistors with emitters designed for high power applications and method for fabricating same
JPH0669227A (ja) * 1992-05-29 1994-03-11 Texas Instr Inc <Ti> 化合物半導体のヘテロ接合バイポーラトランジスタ及びその製造方法
US5436181A (en) * 1994-04-18 1995-07-25 Texas Instruments Incorporated Method of self aligning an emitter contact in a heterojunction bipolar transistor
JPH09115919A (ja) * 1995-10-13 1997-05-02 Mitsubishi Electric Corp 半導体装置及びその製造方法
FR2764118B1 (fr) * 1997-05-30 2000-08-04 Thomson Csf Transistor bipolaire stabilise avec elements isolants electriques
JP2000260784A (ja) * 1999-03-12 2000-09-22 Sharp Corp へテロ接合バイポーラトランジスタおよびそれを用いた半導体装置、並びに、へテロ接合バイポーラトランジスタの製造方法
JP3509682B2 (ja) * 2000-01-31 2004-03-22 シャープ株式会社 ヘテロ接合バイポーラトランジスタおよびその製造方法、並びに、通信装置
US6765242B1 (en) * 2000-04-11 2004-07-20 Sandia Corporation Npn double heterostructure bipolar transistor with ingaasn base region
US6368929B1 (en) * 2000-08-17 2002-04-09 Motorola, Inc. Method of manufacturing a semiconductor component and semiconductor component thereof
JP2002343802A (ja) * 2001-05-16 2002-11-29 Hitachi Ltd 半導体装置およびそれを搭載した電子装置
JP3942984B2 (ja) * 2002-08-06 2007-07-11 株式会社ナノテコ バイポーラトランジスタ、マルチフィンガーバイポーラトランジスタ、バイポーラトランジスタ製造用エピタキシャル基板、及びバイポーラトランジスタの製造方法
JP2006073692A (ja) * 2004-09-01 2006-03-16 Matsushita Electric Ind Co Ltd ヘテロ接合バイポーラトランジスタおよびその製造方法
JP2006185990A (ja) * 2004-12-27 2006-07-13 Renesas Technology Corp 半導体装置およびその製造方法ならびに電子装置
JP2006186235A (ja) * 2004-12-28 2006-07-13 Renesas Technology Corp 半導体装置及びその製造方法
JP2006303244A (ja) * 2005-04-21 2006-11-02 Matsushita Electric Ind Co Ltd ヘテロ接合バイポーラトランジスタ及びその製造方法
JP2007242727A (ja) * 2006-03-06 2007-09-20 Sharp Corp ヘテロ接合バイポーラトランジスタ及びこれを用いた電力増幅器
JP2008004779A (ja) * 2006-06-23 2008-01-10 Matsushita Electric Ind Co Ltd 窒化物半導体バイポーラトランジスタ及び窒化物半導体バイポーラトランジスタの製造方法
JP2008235560A (ja) * 2007-03-20 2008-10-02 Matsushita Electric Ind Co Ltd ヘテロ接合バイポーラトランジスタ
US8120147B1 (en) * 2007-12-27 2012-02-21 Vega Wave Systems, Inc. Current-confined heterojunction bipolar transistor
JP2011091179A (ja) * 2009-10-22 2011-05-06 Honda Motor Co Ltd バイポーラ型半導体装置およびその製造方法
JP5660115B2 (ja) * 2012-12-18 2015-01-28 株式会社村田製作所 ヘテロ接合バイポーラトランジスタ、これを用いた電力増幅器、及びヘテロ接合バイポーラトランジスタの製造方法
US9231088B2 (en) * 2014-01-16 2016-01-05 Triquint Semiconductor, Inc. Emitter contact epitaxial structure and ohmic contact formation for heterojunction bipolar transistor
WO2016132594A1 (ja) * 2015-02-17 2016-08-25 株式会社村田製作所 ヘテロ接合バイポーラトランジスタ
JP2018137259A (ja) * 2017-02-20 2018-08-30 株式会社村田製作所 ヘテロ接合バイポーラトランジスタ
US11227862B2 (en) * 2017-02-28 2022-01-18 Murata Manufacturing Co., Ltd. Semiconductor device
JP2019054120A (ja) * 2017-09-15 2019-04-04 株式会社村田製作所 バイポーラトランジスタ及び高周波パワーアンプモジュール
CN108400163B (zh) * 2018-04-19 2020-12-22 苏州闻颂智能科技有限公司 一种自对准异质结双极型晶体管及其制造方法
JP2019220501A (ja) * 2018-06-15 2019-12-26 株式会社村田製作所 半導体装置
JP2020031191A (ja) * 2018-08-24 2020-02-27 株式会社村田製作所 ヘテロ接合バイポーラトランジスタ及び半導体装置
JP2020098865A (ja) * 2018-12-18 2020-06-25 株式会社村田製作所 半導体装置
TWI745847B (zh) * 2019-03-06 2021-11-11 日商村田製作所股份有限公司 半導體裝置
JP2021052150A (ja) * 2019-09-26 2021-04-01 株式会社村田製作所 パワーアンプ単位セル及びパワーアンプモジュール

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000082709A (ja) * 1998-09-04 2000-03-21 Toshiba Corp 半導体装置
JP2001035840A (ja) * 1999-07-26 2001-02-09 Matsushita Electric Ind Co Ltd エッチング方法および半導体装置の製造方法
JP2005123214A (ja) * 2003-10-14 2005-05-12 Anritsu Corp ヘテロ接合バイポーラトランジスタの製造方法
JP2015126176A (ja) * 2013-12-27 2015-07-06 日本電信電話株式会社 ヘテロ接合バイポーラトランジスタおよびその製造方法

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
KASHIO, NORIHIDE ET AL.: "Composition- and Doping-Graded-Base InP/InGaAsSb Double Heterojunction Bipolar Transistors Exhibitin", ELECTRON DEVICE LETTERS, vol. 35, no. 12, JPN6023017863, 28 October 2014 (2014-10-28), US, pages 1209 - 1211, XP011565004, ISSN: 0005201631, DOI: 10.1109/LED.2014.2365216 *

Also Published As

Publication number Publication date
WO2021214866A1 (ja) 2021-10-28
US20230163193A1 (en) 2023-05-25

Similar Documents

Publication Publication Date Title
BR112023005462A2 (https=)
BR112023012656A2 (https=)
BR112021014123A2 (https=)
BR112023009656A2 (https=)
BR112022009896A2 (https=)
BR112021017747A2 (https=)
BR112022024743A2 (https=)
BR112022026905A2 (https=)
BR112023011738A2 (https=)
BR112023004146A2 (https=)
BR112023006729A2 (https=)
BR102021018859A2 (https=)
BR102021015500A2 (https=)
BR102021007058A2 (https=)
BR102020022030A2 (https=)
BR112023016292A2 (https=)
BR112023011610A2 (https=)
BR112023011539A2 (https=)
BR112023008976A2 (https=)
BR102021020147A2 (https=)
BR102021018926A2 (https=)
BR102021018167A2 (https=)
BR102021017576A2 (https=)
BR102021016837A2 (https=)
BR102021016551A2 (https=)

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20220803

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20230516

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20230705

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20230914

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20231121

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20240521