JPWO2021186285A1 - - Google Patents
Info
- Publication number
- JPWO2021186285A1 JPWO2021186285A1 JP2022508603A JP2022508603A JPWO2021186285A1 JP WO2021186285 A1 JPWO2021186285 A1 JP WO2021186285A1 JP 2022508603 A JP2022508603 A JP 2022508603A JP 2022508603 A JP2022508603 A JP 2022508603A JP WO2021186285 A1 JPWO2021186285 A1 JP WO2021186285A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
- H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
- H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
- H10D30/6739—Conductor-insulator-semiconductor electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/674—Thin-film transistors [TFT] characterised by the active materials
- H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/01—Manufacture or treatment
- H10D86/021—Manufacture or treatment of multiple TFTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
- H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
- H10D86/423—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
- H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
- H10D86/425—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer having different crystal properties in different TFTs or within an individual TFT
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
- H10D86/451—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs characterised by the compositions or shapes of the interlayer dielectrics
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
- H10D86/471—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having different architectures, e.g. having both top-gate and bottom-gate TFTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
- H10H29/30—Active-matrix LED displays
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
- H10K59/1213—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
- H10K2102/301—Details of OLEDs
- H10K2102/311—Flexible OLED
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
- H10K77/10—Substrates, e.g. flexible substrates
- H10K77/111—Flexible substrates
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Nonlinear Science (AREA)
- Geometry (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Mathematical Physics (AREA)
- Optics & Photonics (AREA)
- Thin Film Transistor (AREA)
- Manufacturing & Machinery (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Liquid Crystal (AREA)
- Electroluminescent Light Sources (AREA)
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2023172058A JP7724824B2 (ja) | 2020-03-20 | 2023-10-03 | 半導体装置 |
| JP2025130756A JP2025159017A (ja) | 2020-03-20 | 2025-08-05 | 半導体装置 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2020050364 | 2020-03-20 | ||
| JP2020050364 | 2020-03-20 | ||
| PCT/IB2021/051895 WO2021186285A1 (ja) | 2020-03-20 | 2021-03-08 | 半導体装置、および半導体装置の作製方法 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2023172058A Division JP7724824B2 (ja) | 2020-03-20 | 2023-10-03 | 半導体装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JPWO2021186285A1 true JPWO2021186285A1 (https=) | 2021-09-23 |
| JPWO2021186285A5 JPWO2021186285A5 (ja) | 2024-03-05 |
| JP7656586B2 JP7656586B2 (ja) | 2025-04-03 |
Family
ID=77768033
Family Applications (3)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2022508603A Active JP7656586B2 (ja) | 2020-03-20 | 2021-03-08 | 半導体装置 |
| JP2023172058A Active JP7724824B2 (ja) | 2020-03-20 | 2023-10-03 | 半導体装置 |
| JP2025130756A Pending JP2025159017A (ja) | 2020-03-20 | 2025-08-05 | 半導体装置 |
Family Applications After (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2023172058A Active JP7724824B2 (ja) | 2020-03-20 | 2023-10-03 | 半導体装置 |
| JP2025130756A Pending JP2025159017A (ja) | 2020-03-20 | 2025-08-05 | 半導体装置 |
Country Status (7)
| Country | Link |
|---|---|
| US (2) | US12501707B2 (https=) |
| JP (3) | JP7656586B2 (https=) |
| KR (3) | KR20220157419A (https=) |
| CN (2) | CN117878159A (https=) |
| DE (1) | DE112021001732T5 (https=) |
| TW (2) | TWI906697B (https=) |
| WO (1) | WO2021186285A1 (https=) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP7357165B2 (ja) * | 2020-07-22 | 2023-10-05 | シャープ株式会社 | 表示装置 |
| EP4202536B1 (en) * | 2020-08-20 | 2025-07-16 | Toppan Inc. | Diffraction sheet, method for manufacturing same, three-dimensional display device, light-beam reproduction device, three-dimensional space display system, light-beam reproduction method, and program |
| CN117121086A (zh) | 2021-04-22 | 2023-11-24 | 株式会社半导体能源研究所 | 显示装置 |
| CN114779543B (zh) | 2022-04-02 | 2023-09-26 | Tcl华星光电技术有限公司 | 显示面板及其制作方法 |
| TWI802478B (zh) * | 2022-07-27 | 2023-05-11 | 友達光電股份有限公司 | 主動元件基板 |
| JP2024105028A (ja) * | 2023-01-25 | 2024-08-06 | 株式会社ジャパンディスプレイ | 半導体装置 |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2013225620A (ja) * | 2012-04-23 | 2013-10-31 | Semiconductor Energy Lab Co Ltd | 表示装置、表示装置の作製方法および電子機器 |
| JP2015187904A (ja) * | 2014-03-14 | 2015-10-29 | 株式会社半導体エネルギー研究所 | 半導体装置及び電子機器 |
| WO2017130776A1 (ja) * | 2016-01-27 | 2017-08-03 | シャープ株式会社 | 半導体装置およびその製造方法 |
| JP2018010234A (ja) * | 2016-07-15 | 2018-01-18 | 株式会社ジャパンディスプレイ | 表示装置 |
| JP2018031976A (ja) * | 2016-08-26 | 2018-03-01 | 株式会社ジャパンディスプレイ | 表示装置 |
| JP2018064020A (ja) * | 2016-10-12 | 2018-04-19 | 株式会社ジャパンディスプレイ | 表示装置 |
| JP2018093082A (ja) * | 2016-12-05 | 2018-06-14 | 株式会社Ｊｏｌｅｄ | 半導体装置、半導体装置の製造方法および表示装置 |
| WO2019138734A1 (ja) * | 2018-01-15 | 2019-07-18 | 株式会社ジャパンディスプレイ | 表示装置 |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05299653A (ja) | 1991-04-05 | 1993-11-12 | Fuji Xerox Co Ltd | 半導体装置及びその製造方法 |
| KR100883769B1 (ko) | 2002-11-08 | 2009-02-18 | 엘지디스플레이 주식회사 | 액정표시장치용 어레이기판 제조방법 |
| US8514340B2 (en) | 2002-11-08 | 2013-08-20 | Lg Display Co., Ltd. | Method of fabricating array substrate having double-layered patterns |
| KR101889287B1 (ko) | 2008-09-19 | 2018-08-20 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체장치 |
| WO2011027656A1 (en) | 2009-09-04 | 2011-03-10 | Semiconductor Energy Laboratory Co., Ltd. | Transistor and display device |
| US8659957B2 (en) | 2011-03-07 | 2014-02-25 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method of driving semiconductor device |
| CN107591316B (zh) | 2012-05-31 | 2021-06-08 | 株式会社半导体能源研究所 | 半导体装置 |
| JP6224931B2 (ja) | 2012-07-27 | 2017-11-01 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| WO2015052991A1 (ja) | 2013-10-09 | 2015-04-16 | シャープ株式会社 | 半導体装置およびその製造方法 |
| KR102458660B1 (ko) | 2016-08-03 | 2022-10-26 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시 장치 및 전자 기기 |
| JP2020147399A (ja) | 2019-03-13 | 2020-09-17 | シャープ株式会社 | 給紙カセットおよびその給紙カセットを備える画像形成装置 |
-
2021
- 2021-03-04 TW TW112145540A patent/TWI906697B/zh active
- 2021-03-04 TW TW110107771A patent/TWI893073B/zh active
- 2021-03-08 WO PCT/IB2021/051895 patent/WO2021186285A1/ja not_active Ceased
- 2021-03-08 KR KR1020227035773A patent/KR20220157419A/ko active Pending
- 2021-03-08 US US17/911,751 patent/US12501707B2/en active Active
- 2021-03-08 KR KR1020237040789A patent/KR102927885B1/ko active Active
- 2021-03-08 CN CN202311627872.6A patent/CN117878159A/zh active Pending
- 2021-03-08 DE DE112021001732.2T patent/DE112021001732T5/de active Pending
- 2021-03-08 KR KR1020267003800A patent/KR20260021823A/ko active Pending
- 2021-03-08 JP JP2022508603A patent/JP7656586B2/ja active Active
- 2021-03-08 CN CN202180022758.3A patent/CN115362561A/zh active Pending
-
2023
- 2023-10-03 JP JP2023172058A patent/JP7724824B2/ja active Active
- 2023-11-07 US US18/387,691 patent/US20240072073A1/en active Pending
-
2025
- 2025-08-05 JP JP2025130756A patent/JP2025159017A/ja active Pending
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2013225620A (ja) * | 2012-04-23 | 2013-10-31 | Semiconductor Energy Lab Co Ltd | 表示装置、表示装置の作製方法および電子機器 |
| JP2015187904A (ja) * | 2014-03-14 | 2015-10-29 | 株式会社半導体エネルギー研究所 | 半導体装置及び電子機器 |
| WO2017130776A1 (ja) * | 2016-01-27 | 2017-08-03 | シャープ株式会社 | 半導体装置およびその製造方法 |
| JP2018010234A (ja) * | 2016-07-15 | 2018-01-18 | 株式会社ジャパンディスプレイ | 表示装置 |
| JP2018031976A (ja) * | 2016-08-26 | 2018-03-01 | 株式会社ジャパンディスプレイ | 表示装置 |
| JP2018064020A (ja) * | 2016-10-12 | 2018-04-19 | 株式会社ジャパンディスプレイ | 表示装置 |
| JP2018093082A (ja) * | 2016-12-05 | 2018-06-14 | 株式会社Ｊｏｌｅｄ | 半導体装置、半導体装置の製造方法および表示装置 |
| WO2019138734A1 (ja) * | 2018-01-15 | 2019-07-18 | 株式会社ジャパンディスプレイ | 表示装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2025159017A (ja) | 2025-10-17 |
| JP7656586B2 (ja) | 2025-04-03 |
| KR102927885B1 (ko) | 2026-02-19 |
| TW202204995A (zh) | 2022-02-01 |
| KR20220157419A (ko) | 2022-11-29 |
| TWI893073B (zh) | 2025-08-11 |
| US12501707B2 (en) | 2025-12-16 |
| TWI906697B (zh) | 2025-12-01 |
| CN117878159A (zh) | 2024-04-12 |
| US20230178569A1 (en) | 2023-06-08 |
| TW202414057A (zh) | 2024-04-01 |
| JP2023168494A (ja) | 2023-11-24 |
| DE112021001732T5 (de) | 2022-12-29 |
| KR20230165376A (ko) | 2023-12-05 |
| JP7724824B2 (ja) | 2025-08-18 |
| US20240072073A1 (en) | 2024-02-29 |
| KR20260021823A (ko) | 2026-02-13 |
| CN115362561A (zh) | 2022-11-18 |
| WO2021186285A1 (ja) | 2021-09-23 |
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