TWI906697B - 半導體裝置及半導體裝置的製造方法 - Google Patents

半導體裝置及半導體裝置的製造方法

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Publication number
TWI906697B
TWI906697B TW112145540A TW112145540A TWI906697B TW I906697 B TWI906697 B TW I906697B TW 112145540 A TW112145540 A TW 112145540A TW 112145540 A TW112145540 A TW 112145540A TW I906697 B TWI906697 B TW I906697B
Authority
TW
Taiwan
Prior art keywords
layer
insulating layer
transistor
conductive
conductive layer
Prior art date
Application number
TW112145540A
Other languages
English (en)
Chinese (zh)
Other versions
TW202414057A (zh
Inventor
島行德
岡崎健一
Original Assignee
日商半導體能源研究所股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by 日商半導體能源研究所股份有限公司 filed Critical 日商半導體能源研究所股份有限公司
Publication of TW202414057A publication Critical patent/TW202414057A/zh
Application granted granted Critical
Publication of TWI906697B publication Critical patent/TWI906697B/zh

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Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
    • H10D30/6739—Conductor-insulator-semiconductor electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
    • H10D86/423—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
    • H10D86/425—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer having different crystal properties in different TFTs or within an individual TFT
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/451—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs characterised by the compositions or shapes of the interlayer dielectrics
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/471—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having different architectures, e.g. having both top-gate and bottom-gate TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/30—Active-matrix LED displays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
    • H10K59/1213—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/311—Flexible OLED
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
    • H10K77/10—Substrates, e.g. flexible substrates
    • H10K77/111—Flexible substrates

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Nonlinear Science (AREA)
  • Geometry (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Optics & Photonics (AREA)
  • Thin Film Transistor (AREA)
  • Manufacturing & Machinery (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Liquid Crystal (AREA)
  • Electroluminescent Light Sources (AREA)
TW112145540A 2020-03-20 2021-03-04 半導體裝置及半導體裝置的製造方法 TWI906697B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2020-050364 2020-03-20
JP2020050364 2020-03-20

Publications (2)

Publication Number Publication Date
TW202414057A TW202414057A (zh) 2024-04-01
TWI906697B true TWI906697B (zh) 2025-12-01

Family

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Family Applications (2)

Application Number Title Priority Date Filing Date
TW112145540A TWI906697B (zh) 2020-03-20 2021-03-04 半導體裝置及半導體裝置的製造方法
TW110107771A TWI893073B (zh) 2020-03-20 2021-03-04 半導體裝置及半導體裝置的製造方法

Family Applications After (1)

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TW110107771A TWI893073B (zh) 2020-03-20 2021-03-04 半導體裝置及半導體裝置的製造方法

Country Status (7)

Country Link
US (2) US12501707B2 (https=)
JP (3) JP7656586B2 (https=)
KR (3) KR20220157419A (https=)
CN (2) CN117878159A (https=)
DE (1) DE112021001732T5 (https=)
TW (2) TWI906697B (https=)
WO (1) WO2021186285A1 (https=)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7357165B2 (ja) * 2020-07-22 2023-10-05 シャープ株式会社 表示装置
EP4202536B1 (en) * 2020-08-20 2025-07-16 Toppan Inc. Diffraction sheet, method for manufacturing same, three-dimensional display device, light-beam reproduction device, three-dimensional space display system, light-beam reproduction method, and program
CN117121086A (zh) 2021-04-22 2023-11-24 株式会社半导体能源研究所 显示装置
CN114779543B (zh) 2022-04-02 2023-09-26 Tcl华星光电技术有限公司 显示面板及其制作方法
TWI802478B (zh) * 2022-07-27 2023-05-11 友達光電股份有限公司 主動元件基板
JP2024105028A (ja) * 2023-01-25 2024-08-06 株式会社ジャパンディスプレイ 半導体装置

Citations (5)

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JP2013225620A (ja) * 2012-04-23 2013-10-31 Semiconductor Energy Lab Co Ltd 表示装置、表示装置の作製方法および電子機器
US20150263047A1 (en) * 2014-03-14 2015-09-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and electronic device
TW201733127A (zh) * 2012-07-27 2017-09-16 半導體能源研究所股份有限公司 半導體裝置
TW201804623A (zh) * 2009-09-04 2018-02-01 半導體能源研究所股份有限公司 電晶體和顯示裝置
CN107785380A (zh) * 2016-08-26 2018-03-09 株式会社日本显示器 显示装置

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JPH05299653A (ja) 1991-04-05 1993-11-12 Fuji Xerox Co Ltd 半導体装置及びその製造方法
KR100883769B1 (ko) 2002-11-08 2009-02-18 엘지디스플레이 주식회사 액정표시장치용 어레이기판 제조방법
US8514340B2 (en) 2002-11-08 2013-08-20 Lg Display Co., Ltd. Method of fabricating array substrate having double-layered patterns
KR101889287B1 (ko) 2008-09-19 2018-08-20 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체장치
US8659957B2 (en) 2011-03-07 2014-02-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of driving semiconductor device
CN107591316B (zh) 2012-05-31 2021-06-08 株式会社半导体能源研究所 半导体装置
WO2015052991A1 (ja) 2013-10-09 2015-04-16 シャープ株式会社 半導体装置およびその製造方法
US10651209B2 (en) 2016-01-27 2020-05-12 Sharp Kabushiki Kaisha Semiconductor device and method for manufacturing same
JP6751613B2 (ja) 2016-07-15 2020-09-09 株式会社ジャパンディスプレイ 表示装置
KR102458660B1 (ko) 2016-08-03 2022-10-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치 및 전자 기기
JP2018064020A (ja) 2016-10-12 2018-04-19 株式会社ジャパンディスプレイ 表示装置
JP6706570B2 (ja) 2016-12-05 2020-06-10 株式会社Ｊｏｌｅｄ 半導体装置、半導体装置の製造方法および表示装置
JP7085352B2 (ja) 2018-01-15 2022-06-16 株式会社ジャパンディスプレイ 表示装置
JP2020147399A (ja) 2019-03-13 2020-09-17 シャープ株式会社 給紙カセットおよびその給紙カセットを備える画像形成装置

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Publication number Priority date Publication date Assignee Title
TW201804623A (zh) * 2009-09-04 2018-02-01 半導體能源研究所股份有限公司 電晶體和顯示裝置
JP2013225620A (ja) * 2012-04-23 2013-10-31 Semiconductor Energy Lab Co Ltd 表示装置、表示装置の作製方法および電子機器
TW201733127A (zh) * 2012-07-27 2017-09-16 半導體能源研究所股份有限公司 半導體裝置
US20150263047A1 (en) * 2014-03-14 2015-09-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and electronic device
CN107785380A (zh) * 2016-08-26 2018-03-09 株式会社日本显示器 显示装置

Also Published As

Publication number Publication date
JP2025159017A (ja) 2025-10-17
JP7656586B2 (ja) 2025-04-03
KR102927885B1 (ko) 2026-02-19
TW202204995A (zh) 2022-02-01
KR20220157419A (ko) 2022-11-29
JPWO2021186285A1 (https=) 2021-09-23
TWI893073B (zh) 2025-08-11
US12501707B2 (en) 2025-12-16
CN117878159A (zh) 2024-04-12
US20230178569A1 (en) 2023-06-08
TW202414057A (zh) 2024-04-01
JP2023168494A (ja) 2023-11-24
DE112021001732T5 (de) 2022-12-29
KR20230165376A (ko) 2023-12-05
JP7724824B2 (ja) 2025-08-18
US20240072073A1 (en) 2024-02-29
KR20260021823A (ko) 2026-02-13
CN115362561A (zh) 2022-11-18
WO2021186285A1 (ja) 2021-09-23

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