CN117878159A - 半导体装置及半导体装置的制造方法 - Google Patents

半导体装置及半导体装置的制造方法 Download PDF

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Publication number
CN117878159A
CN117878159A CN202311627872.6A CN202311627872A CN117878159A CN 117878159 A CN117878159 A CN 117878159A CN 202311627872 A CN202311627872 A CN 202311627872A CN 117878159 A CN117878159 A CN 117878159A
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CN
China
Prior art keywords
layer
insulating layer
conductive layer
transistor
semiconductor
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Pending
Application number
CN202311627872.6A
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English (en)
Chinese (zh)
Inventor
岛行德
冈崎健一
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Publication of CN117878159A publication Critical patent/CN117878159A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
    • H10D30/6739—Conductor-insulator-semiconductor electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
    • H10D86/423—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
    • H10D86/425—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer having different crystal properties in different TFTs or within an individual TFT
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/451—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs characterised by the compositions or shapes of the interlayer dielectrics
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/471—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having different architectures, e.g. having both top-gate and bottom-gate TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/30—Active-matrix LED displays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
    • H10K59/1213—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/311—Flexible OLED
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
    • H10K77/10—Substrates, e.g. flexible substrates
    • H10K77/111—Flexible substrates

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Nonlinear Science (AREA)
  • Geometry (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Optics & Photonics (AREA)
  • Thin Film Transistor (AREA)
  • Manufacturing & Machinery (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Liquid Crystal (AREA)
  • Electroluminescent Light Sources (AREA)
CN202311627872.6A 2020-03-20 2021-03-08 半导体装置及半导体装置的制造方法 Pending CN117878159A (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2020-050364 2020-03-20
JP2020050364 2020-03-20
CN202180022758.3A CN115362561A (zh) 2020-03-20 2021-03-08 半导体装置及半导体装置的制造方法
PCT/IB2021/051895 WO2021186285A1 (ja) 2020-03-20 2021-03-08 半導体装置、および半導体装置の作製方法

Related Parent Applications (1)

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CN202180022758.3A Division CN115362561A (zh) 2020-03-20 2021-03-08 半导体装置及半导体装置的制造方法

Publications (1)

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CN117878159A true CN117878159A (zh) 2024-04-12

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CN202311627872.6A Pending CN117878159A (zh) 2020-03-20 2021-03-08 半导体装置及半导体装置的制造方法
CN202180022758.3A Pending CN115362561A (zh) 2020-03-20 2021-03-08 半导体装置及半导体装置的制造方法

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US (2) US12501707B2 (https=)
JP (3) JP7656586B2 (https=)
KR (3) KR20220157419A (https=)
CN (2) CN117878159A (https=)
DE (1) DE112021001732T5 (https=)
TW (2) TWI906697B (https=)
WO (1) WO2021186285A1 (https=)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7357165B2 (ja) * 2020-07-22 2023-10-05 シャープ株式会社 表示装置
EP4202536B1 (en) * 2020-08-20 2025-07-16 Toppan Inc. Diffraction sheet, method for manufacturing same, three-dimensional display device, light-beam reproduction device, three-dimensional space display system, light-beam reproduction method, and program
CN117121086A (zh) 2021-04-22 2023-11-24 株式会社半导体能源研究所 显示装置
CN114779543B (zh) 2022-04-02 2023-09-26 Tcl华星光电技术有限公司 显示面板及其制作方法
TWI802478B (zh) * 2022-07-27 2023-05-11 友達光電股份有限公司 主動元件基板
JP2024105028A (ja) * 2023-01-25 2024-08-06 株式会社ジャパンディスプレイ 半導体装置

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JPH05299653A (ja) 1991-04-05 1993-11-12 Fuji Xerox Co Ltd 半導体装置及びその製造方法
KR100883769B1 (ko) 2002-11-08 2009-02-18 엘지디스플레이 주식회사 액정표시장치용 어레이기판 제조방법
US8514340B2 (en) 2002-11-08 2013-08-20 Lg Display Co., Ltd. Method of fabricating array substrate having double-layered patterns
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CN107591316B (zh) 2012-05-31 2021-06-08 株式会社半导体能源研究所 半导体装置
JP6224931B2 (ja) 2012-07-27 2017-11-01 株式会社半導体エネルギー研究所 半導体装置
WO2015052991A1 (ja) 2013-10-09 2015-04-16 シャープ株式会社 半導体装置およびその製造方法
US9887212B2 (en) * 2014-03-14 2018-02-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and electronic device
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JP6751613B2 (ja) 2016-07-15 2020-09-09 株式会社ジャパンディスプレイ 表示装置
KR102458660B1 (ko) 2016-08-03 2022-10-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치 및 전자 기기
JP2018031976A (ja) * 2016-08-26 2018-03-01 株式会社ジャパンディスプレイ 表示装置
JP2018064020A (ja) 2016-10-12 2018-04-19 株式会社ジャパンディスプレイ 表示装置
JP6706570B2 (ja) 2016-12-05 2020-06-10 株式会社Ｊｏｌｅｄ 半導体装置、半導体装置の製造方法および表示装置
JP7085352B2 (ja) 2018-01-15 2022-06-16 株式会社ジャパンディスプレイ 表示装置
JP2020147399A (ja) 2019-03-13 2020-09-17 シャープ株式会社 給紙カセットおよびその給紙カセットを備える画像形成装置

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Publication number Publication date
JP2025159017A (ja) 2025-10-17
JP7656586B2 (ja) 2025-04-03
KR102927885B1 (ko) 2026-02-19
TW202204995A (zh) 2022-02-01
KR20220157419A (ko) 2022-11-29
JPWO2021186285A1 (https=) 2021-09-23
TWI893073B (zh) 2025-08-11
US12501707B2 (en) 2025-12-16
TWI906697B (zh) 2025-12-01
US20230178569A1 (en) 2023-06-08
TW202414057A (zh) 2024-04-01
JP2023168494A (ja) 2023-11-24
DE112021001732T5 (de) 2022-12-29
KR20230165376A (ko) 2023-12-05
JP7724824B2 (ja) 2025-08-18
US20240072073A1 (en) 2024-02-29
KR20260021823A (ko) 2026-02-13
CN115362561A (zh) 2022-11-18
WO2021186285A1 (ja) 2021-09-23

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