JPWO2021126658A5 - - Google Patents
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- Publication number
- JPWO2021126658A5 JPWO2021126658A5 JP2022537200A JP2022537200A JPWO2021126658A5 JP WO2021126658 A5 JPWO2021126658 A5 JP WO2021126658A5 JP 2022537200 A JP2022537200 A JP 2022537200A JP 2022537200 A JP2022537200 A JP 2022537200A JP WO2021126658 A5 JPWO2021126658 A5 JP WO2021126658A5
- Authority
- JP
- Japan
- Prior art keywords
- probe
- substrate
- double
- temperature
- sided
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000523 sample Substances 0.000 claims description 693
- 239000000758 substrate Substances 0.000 claims description 402
- 238000012360 testing method Methods 0.000 claims description 164
- 239000012530 fluid Substances 0.000 claims description 101
- 238000000034 method Methods 0.000 claims description 71
- 238000003384 imaging method Methods 0.000 claims description 43
- 238000012546 transfer Methods 0.000 claims description 38
- 238000004891 communication Methods 0.000 claims description 36
- 230000003287 optical effect Effects 0.000 claims description 35
- 238000007689 inspection Methods 0.000 claims description 17
- 230000002093 peripheral effect Effects 0.000 claims description 8
- 230000008859 change Effects 0.000 claims description 3
- 238000010438 heat treatment Methods 0.000 description 11
- 238000001816 cooling Methods 0.000 description 9
- 230000007274 generation of a signal involved in cell-cell signaling Effects 0.000 description 9
- 230000006870 function Effects 0.000 description 8
- 239000004020 conductor Substances 0.000 description 6
- 230000001276 controlling effect Effects 0.000 description 6
- 230000001419 dependent effect Effects 0.000 description 6
- 238000005259 measurement Methods 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 230000009471 action Effects 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- 230000007246 mechanism Effects 0.000 description 4
- 235000012431 wafers Nutrition 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 230000004044 response Effects 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 229910000679 solder Inorganic materials 0.000 description 3
- 239000003570 air Substances 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000005670 electromagnetic radiation Effects 0.000 description 2
- 230000014509 gene expression Effects 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 229910052756 noble gas Inorganic materials 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 230000001105 regulatory effect Effects 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 230000005679 Peltier effect Effects 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000000712 assembly Effects 0.000 description 1
- 238000000429 assembly Methods 0.000 description 1
- 230000001143 conditioned effect Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 230000005676 thermoelectric effect Effects 0.000 description 1
- 238000013519 translation Methods 0.000 description 1
- 238000012795 verification Methods 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201962949921P | 2019-12-18 | 2019-12-18 | |
| US62/949,921 | 2019-12-18 | ||
| US17/111,283 | 2020-12-03 | ||
| US17/111,283 US11378619B2 (en) | 2019-12-18 | 2020-12-03 | Double-sided probe systems with thermal control systems and related methods |
| PCT/US2020/064242 WO2021126658A1 (fr) | 2019-12-18 | 2020-12-10 | Systèmes de sondes double face avec systèmes de régulation thermique et procédés connexes |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2023511495A JP2023511495A (ja) | 2023-03-20 |
| JPWO2021126658A5 true JPWO2021126658A5 (fr) | 2024-01-17 |
| JP7474330B2 JP7474330B2 (ja) | 2024-04-24 |
Family
ID=76437984
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2022537200A Active JP7474330B2 (ja) | 2019-12-18 | 2020-12-10 | 熱制御システムを有する両面プローブシステムとその関連する方法 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US11378619B2 (fr) |
| EP (1) | EP4078204A4 (fr) |
| JP (1) | JP7474330B2 (fr) |
| KR (1) | KR20220114607A (fr) |
| TW (1) | TWI778468B (fr) |
| WO (1) | WO2021126658A1 (fr) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP7402597B2 (ja) * | 2018-06-11 | 2023-12-21 | テクトロニクス・インコーポレイテッド | タッチスクリーンを有する試験測定プローブ |
| US11262401B2 (en) * | 2020-04-22 | 2022-03-01 | Mpi Corporation | Wafer probe station |
| TWI811932B (zh) * | 2021-12-30 | 2023-08-11 | 新唐科技股份有限公司 | 感測晶片校正裝置及感測晶片校正方法 |
Family Cites Families (24)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0714898A (ja) * | 1993-06-23 | 1995-01-17 | Mitsubishi Electric Corp | 半導体ウエハの試験解析装置および解析方法 |
| US6111421A (en) * | 1997-10-20 | 2000-08-29 | Tokyo Electron Limited | Probe method and apparatus for inspecting an object |
| JP2000164653A (ja) * | 1998-11-30 | 2000-06-16 | Ando Electric Co Ltd | 電気光学サンプリングプローバ及び測定方法 |
| US6583638B2 (en) | 1999-01-26 | 2003-06-24 | Trio-Tech International | Temperature-controlled semiconductor wafer chuck system |
| JP3874996B2 (ja) * | 2000-05-30 | 2007-01-31 | ファブソリューション株式会社 | デバイス検査方法および装置 |
| US6552561B2 (en) | 2000-07-10 | 2003-04-22 | Temptronic Corporation | Apparatus and method for controlling temperature in a device under test using integrated temperature sensitive diode |
| US6515494B1 (en) * | 2000-07-17 | 2003-02-04 | Infrared Laboratories, Inc. | Silicon wafer probe station using back-side imaging |
| JP4659328B2 (ja) * | 2002-10-21 | 2011-03-30 | 東京エレクトロン株式会社 | 被検査体を温度制御するプローブ装置 |
| JP2007183193A (ja) | 2006-01-10 | 2007-07-19 | Micronics Japan Co Ltd | プロービング装置 |
| JP5555633B2 (ja) | 2007-10-10 | 2014-07-23 | カスケード・マイクロテク・ゲゼルシャフト・ミト・ベシュレンクテル・ハフツング | 所定の温度条件下で試験基板を検査する方法及び温度条件を設定可能な検査装置 |
| KR100986805B1 (ko) * | 2008-11-21 | 2010-10-11 | 에코피아 주식회사 | 온도 가변형 프로브 스테이션 |
| WO2010082094A2 (fr) | 2009-01-17 | 2010-07-22 | Doublecheck Semiconductors Pte. Ltd. | Procédé et appareil permettant de tester une tranche semi-conductrice |
| JP5432700B2 (ja) | 2009-12-28 | 2014-03-05 | 株式会社日本マイクロニクス | 半導体デバイスの検査装置 |
| JP5539033B2 (ja) * | 2010-05-31 | 2014-07-02 | 株式会社日本マイクロニクス | 半導体測定装置及び測定方法 |
| JP2012142387A (ja) * | 2010-12-28 | 2012-07-26 | Advantest Corp | 試験装置、ステージ装置、および試験方法 |
| JP5529769B2 (ja) * | 2011-01-13 | 2014-06-25 | 東京エレクトロン株式会社 | プローブカードの熱的安定化方法及び検査装置 |
| JP6084469B2 (ja) * | 2013-01-28 | 2017-02-22 | 三菱電機株式会社 | 半導体評価装置および半導体評価方法 |
| JP6418118B2 (ja) * | 2015-09-24 | 2018-11-07 | 三菱電機株式会社 | 半導体装置の評価装置及び評価方法 |
| US10365323B2 (en) * | 2015-11-25 | 2019-07-30 | Formfactor Beaverton, Inc. | Probe systems and methods for automatically maintaining alignment between a probe and a device under test during a temperature change |
| JP6682895B2 (ja) * | 2016-02-12 | 2020-04-15 | 日本電産リード株式会社 | 検査治具、検査治具セット、及び基板検査装置 |
| US10060963B2 (en) * | 2016-04-01 | 2018-08-28 | Formfactor Beaverton, Inc. | Probe systems, storage media, and methods for wafer-level testing over extended temperature ranges |
| US10698002B2 (en) * | 2017-10-02 | 2020-06-30 | Formfactor Beaverton, Inc. | Probe systems for testing a device under test |
| JP6441435B1 (ja) * | 2017-10-13 | 2018-12-19 | ハイソル株式会社 | プローバ装置およびウェハチャック |
| JP7078838B2 (ja) * | 2017-12-01 | 2022-06-01 | 東京エレクトロン株式会社 | プローバ |
-
2020
- 2020-12-03 US US17/111,283 patent/US11378619B2/en active Active
- 2020-12-10 JP JP2022537200A patent/JP7474330B2/ja active Active
- 2020-12-10 KR KR1020227024068A patent/KR20220114607A/ko active Search and Examination
- 2020-12-10 EP EP20902638.4A patent/EP4078204A4/fr active Pending
- 2020-12-10 WO PCT/US2020/064242 patent/WO2021126658A1/fr active Search and Examination
- 2020-12-11 TW TW109143879A patent/TWI778468B/zh active
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