JPWO2021064503A5 - - Google Patents
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- Publication number
- JPWO2021064503A5 JPWO2021064503A5 JP2021550714A JP2021550714A JPWO2021064503A5 JP WO2021064503 A5 JPWO2021064503 A5 JP WO2021064503A5 JP 2021550714 A JP2021550714 A JP 2021550714A JP 2021550714 A JP2021550714 A JP 2021550714A JP WO2021064503 A5 JPWO2021064503 A5 JP WO2021064503A5
- Authority
- JP
- Japan
- Prior art keywords
- oxide
- conductor
- insulator
- semiconductor device
- region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2024174205A JP2024177392A (ja) | 2019-10-04 | 2024-10-03 | 半導体装置 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2019183530 | 2019-10-04 | ||
| JP2019183530 | 2019-10-04 | ||
| PCT/IB2020/058699 WO2021064503A1 (ja) | 2019-10-04 | 2020-09-18 | 半導体装置 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2024174205A Division JP2024177392A (ja) | 2019-10-04 | 2024-10-03 | 半導体装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JPWO2021064503A1 JPWO2021064503A1 (https=) | 2021-04-08 |
| JPWO2021064503A5 true JPWO2021064503A5 (https=) | 2023-09-11 |
| JP7568633B2 JP7568633B2 (ja) | 2024-10-16 |
Family
ID=75336911
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2021550714A Active JP7568633B2 (ja) | 2019-10-04 | 2020-09-18 | 半導体装置 |
| JP2024174205A Withdrawn JP2024177392A (ja) | 2019-10-04 | 2024-10-03 | 半導体装置 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2024174205A Withdrawn JP2024177392A (ja) | 2019-10-04 | 2024-10-03 | 半導体装置 |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US12369356B2 (https=) |
| JP (2) | JP7568633B2 (https=) |
| WO (1) | WO2021064503A1 (https=) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115244713A (zh) | 2020-03-31 | 2022-10-25 | 株式会社半导体能源研究所 | 半导体装置、半导体装置的制造方法 |
| US20240413247A1 (en) * | 2023-06-06 | 2024-12-12 | Taiwan Semiconductor Manufacturing Company Limited | Compositionally-modulated capping layer for a transistor and methods for forming the same |
Family Cites Families (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101870119B1 (ko) | 2009-12-25 | 2018-06-25 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
| KR20120130763A (ko) | 2010-02-05 | 2012-12-03 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 반도체 장치의 제조 방법 |
| CN107947763B (zh) | 2010-08-06 | 2021-12-28 | 株式会社半导体能源研究所 | 半导体集成电路 |
| TWI632688B (zh) | 2013-07-25 | 2018-08-11 | 半導體能源研究所股份有限公司 | 半導體裝置以及半導體裝置的製造方法 |
| US9455337B2 (en) | 2014-06-18 | 2016-09-27 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
| US10147747B2 (en) | 2014-08-21 | 2018-12-04 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, manufacturing method thereof, and electronic device |
| JP6705663B2 (ja) * | 2015-03-06 | 2020-06-03 | 株式会社半導体エネルギー研究所 | 半導体装置およびその作製方法 |
| CN104992981B (zh) | 2015-05-26 | 2018-03-06 | 中国科学院宁波材料技术与工程研究所 | 氧化物薄膜晶体管及其制备方法和反相器及其制备方法 |
| KR20170112945A (ko) | 2016-04-01 | 2017-10-12 | 삼성전자주식회사 | 이동통신 시스템에서 기기 간 통신과 셀룰라 통신의 공존 방법 및 장치 |
| TW202129783A (zh) * | 2016-08-24 | 2021-08-01 | 日商半導體能源研究所股份有限公司 | 半導體裝置及其製造方法 |
| US20200227562A1 (en) | 2017-08-04 | 2020-07-16 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing semiconductor device |
| CN111052396B (zh) | 2017-09-01 | 2024-03-01 | 株式会社半导体能源研究所 | 半导体装置及显示装置 |
| WO2020070580A1 (ja) | 2018-10-05 | 2020-04-09 | 株式会社半導体エネルギー研究所 | 半導体装置、および半導体装置の作製方法 |
| WO2020075022A1 (ja) | 2018-10-12 | 2020-04-16 | 株式会社半導体エネルギー研究所 | トランジスタ、半導体装置、および電子機器 |
| JP7512204B2 (ja) | 2018-10-26 | 2024-07-08 | 株式会社半導体エネルギー研究所 | 金属酸化物の作製方法 |
-
2020
- 2020-09-18 WO PCT/IB2020/058699 patent/WO2021064503A1/ja not_active Ceased
- 2020-09-18 US US17/642,434 patent/US12369356B2/en active Active
- 2020-09-18 JP JP2021550714A patent/JP7568633B2/ja active Active
-
2024
- 2024-10-03 JP JP2024174205A patent/JP2024177392A/ja not_active Withdrawn
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