JPWO2021064503A1 - - Google Patents

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Publication number
JPWO2021064503A1
JPWO2021064503A1 JP2021550714A JP2021550714A JPWO2021064503A1 JP WO2021064503 A1 JPWO2021064503 A1 JP WO2021064503A1 JP 2021550714 A JP2021550714 A JP 2021550714A JP 2021550714 A JP2021550714 A JP 2021550714A JP WO2021064503 A1 JPWO2021064503 A1 JP WO2021064503A1
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JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Application number
JP2021550714A
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Japanese (ja)
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JPWO2021064503A5 (https=
JP7568633B2 (ja
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Publication of JPWO2021064503A1 publication Critical patent/JPWO2021064503A1/ja
Publication of JPWO2021064503A5 publication Critical patent/JPWO2021064503A5/ja
Priority to JP2024174205A priority Critical patent/JP2024177392A/ja
Application granted granted Critical
Publication of JP7568633B2 publication Critical patent/JP7568633B2/ja
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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/70—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates the floating gate being an electrode shared by two or more components
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6733—Multi-gate TFTs
    • H10D30/6734—Multi-gate TFTs having gate electrodes arranged on both top and bottom sides of the channel, e.g. dual-gate TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/68—Floating-gate IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/69—IGFETs having charge trapping gate insulators, e.g. MNOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/011—Manufacture or treatment of electrodes ohmically coupled to a semiconductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P34/00—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices
    • H10P34/40—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation
    • H10P34/42—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation with electromagnetic radiation, e.g. laser annealing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/90—Thermal treatments, e.g. annealing or sintering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment

Landscapes

  • Thin Film Transistor (AREA)
  • Semiconductor Memories (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Non-Volatile Memory (AREA)
JP2021550714A 2019-10-04 2020-09-18 半導体装置 Active JP7568633B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2024174205A JP2024177392A (ja) 2019-10-04 2024-10-03 半導体装置

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2019183530 2019-10-04
JP2019183530 2019-10-04
PCT/IB2020/058699 WO2021064503A1 (ja) 2019-10-04 2020-09-18 半導体装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2024174205A Division JP2024177392A (ja) 2019-10-04 2024-10-03 半導体装置

Publications (3)

Publication Number Publication Date
JPWO2021064503A1 true JPWO2021064503A1 (https=) 2021-04-08
JPWO2021064503A5 JPWO2021064503A5 (https=) 2023-09-11
JP7568633B2 JP7568633B2 (ja) 2024-10-16

Family

ID=75336911

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2021550714A Active JP7568633B2 (ja) 2019-10-04 2020-09-18 半導体装置
JP2024174205A Withdrawn JP2024177392A (ja) 2019-10-04 2024-10-03 半導体装置

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2024174205A Withdrawn JP2024177392A (ja) 2019-10-04 2024-10-03 半導体装置

Country Status (3)

Country Link
US (1) US12369356B2 (https=)
JP (2) JP7568633B2 (https=)
WO (1) WO2021064503A1 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115244713A (zh) 2020-03-31 2022-10-25 株式会社半导体能源研究所 半导体装置、半导体装置的制造方法
US20240413247A1 (en) * 2023-06-06 2024-12-12 Taiwan Semiconductor Manufacturing Company Limited Compositionally-modulated capping layer for a transistor and methods for forming the same

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015043415A (ja) * 2013-07-25 2015-03-05 株式会社半導体エネルギー研究所 半導体装置および半導体装置の作製方法
CN104992981A (zh) * 2015-05-26 2015-10-21 中国科学院宁波材料技术与工程研究所 氧化物薄膜晶体管及其制备方法和反相器及其制备方法
JP2016021562A (ja) * 2014-06-18 2016-02-04 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP2016046527A (ja) * 2014-08-21 2016-04-04 株式会社半導体エネルギー研究所 半導体装置とその作製方法、電子機器
JP2016167595A (ja) * 2015-03-06 2016-09-15 株式会社半導体エネルギー研究所 半導体装置およびその作製方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101870119B1 (ko) 2009-12-25 2018-06-25 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
KR20120130763A (ko) 2010-02-05 2012-12-03 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 제조 방법
CN107947763B (zh) 2010-08-06 2021-12-28 株式会社半导体能源研究所 半导体集成电路
KR20170112945A (ko) 2016-04-01 2017-10-12 삼성전자주식회사 이동통신 시스템에서 기기 간 통신과 셀룰라 통신의 공존 방법 및 장치
TW202129783A (zh) * 2016-08-24 2021-08-01 日商半導體能源研究所股份有限公司 半導體裝置及其製造方法
US20200227562A1 (en) 2017-08-04 2020-07-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
CN111052396B (zh) 2017-09-01 2024-03-01 株式会社半导体能源研究所 半导体装置及显示装置
WO2020070580A1 (ja) 2018-10-05 2020-04-09 株式会社半導体エネルギー研究所 半導体装置、および半導体装置の作製方法
WO2020075022A1 (ja) 2018-10-12 2020-04-16 株式会社半導体エネルギー研究所 トランジスタ、半導体装置、および電子機器
JP7512204B2 (ja) 2018-10-26 2024-07-08 株式会社半導体エネルギー研究所 金属酸化物の作製方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015043415A (ja) * 2013-07-25 2015-03-05 株式会社半導体エネルギー研究所 半導体装置および半導体装置の作製方法
JP2016021562A (ja) * 2014-06-18 2016-02-04 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP2016046527A (ja) * 2014-08-21 2016-04-04 株式会社半導体エネルギー研究所 半導体装置とその作製方法、電子機器
JP2016167595A (ja) * 2015-03-06 2016-09-15 株式会社半導体エネルギー研究所 半導体装置およびその作製方法
CN104992981A (zh) * 2015-05-26 2015-10-21 中国科学院宁波材料技术与工程研究所 氧化物薄膜晶体管及其制备方法和反相器及其制备方法

Also Published As

Publication number Publication date
JP2024177392A (ja) 2024-12-19
US20220344511A1 (en) 2022-10-27
WO2021064503A1 (ja) 2021-04-08
JP7568633B2 (ja) 2024-10-16
US12369356B2 (en) 2025-07-22

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