JPWO2021054135A1 - - Google Patents

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Publication number
JPWO2021054135A1
JPWO2021054135A1 JP2021546592A JP2021546592A JPWO2021054135A1 JP WO2021054135 A1 JPWO2021054135 A1 JP WO2021054135A1 JP 2021546592 A JP2021546592 A JP 2021546592A JP 2021546592 A JP2021546592 A JP 2021546592A JP WO2021054135 A1 JPWO2021054135 A1 JP WO2021054135A1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2021546592A
Other languages
Japanese (ja)
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JP7577339B2 (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPWO2021054135A1 publication Critical patent/JPWO2021054135A1/ja
Application granted granted Critical
Publication of JP7577339B2 publication Critical patent/JP7577339B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/4485—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation without using carrier gas in contact with the source material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01B—BOILING; BOILING APPARATUS ; EVAPORATION; EVAPORATION APPARATUS
    • B01B1/00—Boiling; Boiling apparatus for physical or chemical purposes ; Evaporation in general
    • B01B1/005—Evaporation for physical or chemical purposes; Evaporation apparatus therefor, e.g. evaporation of liquids for gas phase reactions
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45561—Gas plumbing upstream of the reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
JP2021546592A 2019-09-19 2020-09-03 気化供給装置 Active JP7577339B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2019170271 2019-09-19
JP2019170271 2019-09-19
PCT/JP2020/033395 WO2021054135A1 (ja) 2019-09-19 2020-09-03 気化供給装置

Publications (2)

Publication Number Publication Date
JPWO2021054135A1 true JPWO2021054135A1 (https=) 2021-03-25
JP7577339B2 JP7577339B2 (ja) 2024-11-05

Family

ID=74884112

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2021546592A Active JP7577339B2 (ja) 2019-09-19 2020-09-03 気化供給装置

Country Status (6)

Country Link
US (1) US11976356B2 (https=)
JP (1) JP7577339B2 (https=)
KR (1) KR102894024B1 (https=)
CN (1) CN114269966A (https=)
TW (1) TWI746161B (https=)
WO (1) WO2021054135A1 (https=)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2022091713A1 (ja) 2020-10-31 2022-05-05 株式会社フジキン ガス供給システムおよびガス供給方法
JP7699797B2 (ja) * 2021-04-28 2025-06-30 株式会社フジキン ガス供給システムおよびガス供給方法
KR20230041614A (ko) * 2021-09-17 2023-03-24 에이에스엠 아이피 홀딩 비.브이. 액체를 가열하기 위한 방법 및 장치
CN114743900A (zh) * 2022-04-25 2022-07-12 北京北方华创微电子装备有限公司 汽化系统以及半导体工艺设备

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003031562A (ja) * 2001-07-12 2003-01-31 Tokyo Electron Ltd 熱処理装置
JP2006124837A (ja) * 2004-10-28 2006-05-18 Jusung Engineering Co Ltd 薄膜製造用装置
JP2012142380A (ja) * 2010-12-28 2012-07-26 Tokyo Electron Ltd 原料供給装置及び成膜装置
JP2016122841A (ja) * 2014-12-22 2016-07-07 株式会社堀場エステック 気化システム
WO2016174832A1 (ja) * 2015-04-30 2016-11-03 株式会社フジキン 気化供給装置
WO2019021949A1 (ja) * 2017-07-25 2019-01-31 株式会社フジキン 流体制御装置

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IT1318608B1 (it) * 2000-07-04 2003-08-27 Univ Degli Studi Milano Topo transgenico per lo screening e per studi di farmacodinamica efarmacocinetica di ligandi attivi sul recettore degli estrogeni e sui
JP4288049B2 (ja) * 2002-08-07 2009-07-01 日本パイオニクス株式会社 気化供給方法
JP4696561B2 (ja) * 2005-01-14 2011-06-08 東京エレクトロン株式会社 気化装置及び処理装置
JP5461786B2 (ja) 2008-04-01 2014-04-02 株式会社フジキン 気化器を備えたガス供給装置
JP5350824B2 (ja) 2009-02-03 2013-11-27 株式会社フジキン 液体材料の気化供給システム
JP5837869B2 (ja) 2012-12-06 2015-12-24 株式会社フジキン 原料気化供給装置
JP6094994B2 (ja) * 2013-02-04 2017-03-15 大陽日酸株式会社 原料ガス生成供給方法
JPWO2014157210A1 (ja) * 2013-03-26 2017-02-16 株式会社日立国際電気 半導体装置の製造方法、基板処理装置及び記録媒体
KR102338026B1 (ko) * 2017-07-25 2021-12-10 가부시키가이샤 후지킨 유체 제어 장치

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003031562A (ja) * 2001-07-12 2003-01-31 Tokyo Electron Ltd 熱処理装置
JP2006124837A (ja) * 2004-10-28 2006-05-18 Jusung Engineering Co Ltd 薄膜製造用装置
JP2012142380A (ja) * 2010-12-28 2012-07-26 Tokyo Electron Ltd 原料供給装置及び成膜装置
JP2016122841A (ja) * 2014-12-22 2016-07-07 株式会社堀場エステック 気化システム
WO2016174832A1 (ja) * 2015-04-30 2016-11-03 株式会社フジキン 気化供給装置
WO2019021949A1 (ja) * 2017-07-25 2019-01-31 株式会社フジキン 流体制御装置

Also Published As

Publication number Publication date
KR102894024B1 (ko) 2025-12-02
TW202124759A (zh) 2021-07-01
KR20220035485A (ko) 2022-03-22
WO2021054135A1 (ja) 2021-03-25
JP7577339B2 (ja) 2024-11-05
TWI746161B (zh) 2021-11-11
US20220403508A1 (en) 2022-12-22
US11976356B2 (en) 2024-05-07
CN114269966A (zh) 2022-04-01

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