TWI746161B - 氣化供給裝置 - Google Patents

氣化供給裝置 Download PDF

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Publication number
TWI746161B
TWI746161B TW109131467A TW109131467A TWI746161B TW I746161 B TWI746161 B TW I746161B TW 109131467 A TW109131467 A TW 109131467A TW 109131467 A TW109131467 A TW 109131467A TW I746161 B TWI746161 B TW I746161B
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TW
Taiwan
Prior art keywords
vaporization
heating
heater
block
valve
Prior art date
Application number
TW109131467A
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English (en)
Chinese (zh)
Other versions
TW202124759A (zh
Inventor
中谷貴紀
日高敦志
徳田伊知郎
中辻景介
Original Assignee
日商富士金股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by 日商富士金股份有限公司 filed Critical 日商富士金股份有限公司
Publication of TW202124759A publication Critical patent/TW202124759A/zh
Application granted granted Critical
Publication of TWI746161B publication Critical patent/TWI746161B/zh

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/4485—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation without using carrier gas in contact with the source material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01B—BOILING; BOILING APPARATUS ; EVAPORATION; EVAPORATION APPARATUS
    • B01B1/00—Boiling; Boiling apparatus for physical or chemical purposes ; Evaporation in general
    • B01B1/005—Evaporation for physical or chemical purposes; Evaporation apparatus therefor, e.g. evaporation of liquids for gas phase reactions
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45561—Gas plumbing upstream of the reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
TW109131467A 2019-09-19 2020-09-14 氣化供給裝置 TWI746161B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2019170271 2019-09-19
JP2019-170271 2019-09-19

Publications (2)

Publication Number Publication Date
TW202124759A TW202124759A (zh) 2021-07-01
TWI746161B true TWI746161B (zh) 2021-11-11

Family

ID=74884112

Family Applications (1)

Application Number Title Priority Date Filing Date
TW109131467A TWI746161B (zh) 2019-09-19 2020-09-14 氣化供給裝置

Country Status (6)

Country Link
US (1) US11976356B2 (https=)
JP (1) JP7577339B2 (https=)
KR (1) KR102894024B1 (https=)
CN (1) CN114269966A (https=)
TW (1) TWI746161B (https=)
WO (1) WO2021054135A1 (https=)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2022091713A1 (ja) 2020-10-31 2022-05-05 株式会社フジキン ガス供給システムおよびガス供給方法
JP7699797B2 (ja) * 2021-04-28 2025-06-30 株式会社フジキン ガス供給システムおよびガス供給方法
KR20230041614A (ko) * 2021-09-17 2023-03-24 에이에스엠 아이피 홀딩 비.브이. 액체를 가열하기 위한 방법 및 장치
CN114743900A (zh) * 2022-04-25 2022-07-12 北京北方华创微电子装备有限公司 汽化系统以及半导体工艺设备

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101006197A (zh) * 2005-01-14 2007-07-25 东京毅力科创株式会社 气化装置以及处理装置
TW201511136A (zh) * 2013-03-26 2015-03-16 日立國際電氣股份有限公司 半導體裝置的製造方法，程式及基板處理裝置
CN105714271A (zh) * 2014-12-22 2016-06-29 株式会社堀场Stec 汽化系统
TW201908515A (zh) * 2017-07-25 2019-03-01 日商富士金股份有限公司 流體控制裝置
TW201920761A (zh) * 2017-07-25 2019-06-01 日商富士金股份有限公司 流體控制裝置

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IT1318608B1 (it) * 2000-07-04 2003-08-27 Univ Degli Studi Milano Topo transgenico per lo screening e per studi di farmacodinamica efarmacocinetica di ligandi attivi sul recettore degli estrogeni e sui
JP4884607B2 (ja) * 2001-07-12 2012-02-29 東京エレクトロン株式会社 熱処理装置
JP4288049B2 (ja) * 2002-08-07 2009-07-01 日本パイオニクス株式会社 気化供給方法
KR101121417B1 (ko) 2004-10-28 2012-03-15 주성엔지니어링(주) 표시소자의 제조장치
JP5461786B2 (ja) 2008-04-01 2014-04-02 株式会社フジキン 気化器を備えたガス供給装置
JP5350824B2 (ja) 2009-02-03 2013-11-27 株式会社フジキン 液体材料の気化供給システム
JP5573666B2 (ja) 2010-12-28 2014-08-20 東京エレクトロン株式会社 原料供給装置及び成膜装置
JP5837869B2 (ja) 2012-12-06 2015-12-24 株式会社フジキン 原料気化供給装置
JP6094994B2 (ja) * 2013-02-04 2017-03-15 大陽日酸株式会社 原料ガス生成供給方法
JP6578125B2 (ja) 2015-04-30 2019-09-18 株式会社フジキン 気化供給装置

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101006197A (zh) * 2005-01-14 2007-07-25 东京毅力科创株式会社 气化装置以及处理装置
TW201511136A (zh) * 2013-03-26 2015-03-16 日立國際電氣股份有限公司 半導體裝置的製造方法，程式及基板處理裝置
CN105714271A (zh) * 2014-12-22 2016-06-29 株式会社堀场Stec 汽化系统
TW201908515A (zh) * 2017-07-25 2019-03-01 日商富士金股份有限公司 流體控制裝置
TW201920761A (zh) * 2017-07-25 2019-06-01 日商富士金股份有限公司 流體控制裝置

Also Published As

Publication number Publication date
KR102894024B1 (ko) 2025-12-02
TW202124759A (zh) 2021-07-01
KR20220035485A (ko) 2022-03-22
JPWO2021054135A1 (https=) 2021-03-25
WO2021054135A1 (ja) 2021-03-25
JP7577339B2 (ja) 2024-11-05
US20220403508A1 (en) 2022-12-22
US11976356B2 (en) 2024-05-07
CN114269966A (zh) 2022-04-01

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